FDMC86244
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
1
2
3
4
5
D
D
D
D
G
S
S
S
Bottom
Top
MLP 3.3x3.3
6
7
8
N-Channel Power Trench® MOSFET
150 V, 9.4 A, 134 mΩ
Features
Max r
Max r
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
= 134 mΩ at VGS = 10 V, ID = 2.8 A
DS(on)
= 186 mΩ at VGS = 6 V, ID = 2.4 A
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
DC - DC Conversion
February 2012
®
process that has
FDMC86244 N-Channel Power Trench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMC86244 FDMC86244 Power 33 13’’ 12
©2012 Fairchild Semiconductor Corporation
FDMC86244 Rev.C1
Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current -Continuous TC = 25°C 9.4
-Pulsed 12
Single Pulse Avalanche Energy (Note 3) 12 mJ
Power Dissipation TC = 25°C 26
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to + 150 °C
Thermal Resistance, Junction to Case 4.7
Thermal Resistance, Junction to Ambient (Note 1a) 125
= 25 °C unless otherwise noted
A
= 25°C (Note 1a) 2.8
A
= 25°C (Note 1a) 2.3
A
1
mm 3000 units
A -Continuous T
W
°C/W
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FDMC86244 N-Channel Power Trench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 120 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25 °C 106 mV/°C
D
= 0 V 1 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA22.64V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -9 mV/°C
D
V
= 10 V, ID = 2.8 A 105 134
GS
= 6 V, ID = 2.4 A 120 186
GS
= 10 V, ID = 2.8 A, TJ = 125 °C 199 254
V
GS
Forward Transconductance VDD = 10 V, ID = 2.8 A 8 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 32 45 pF
Reverse Transfer Capacitance 1.8 5 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g(TOT)
g(TOT)
gs
gd
Turn-On Delay Time
Rise Time 1.5 10 ns
Turn-Off Delay Time 9.9 20 ns
Fall Time 2.3 10 ns
Total Gate Charge V
Total Gate Charge V
Total Gate Charge 1.1 nC
Gate to Drain “Miller” Charge 1.0 nC
= 75 V, VGS = 0 V,
V
DS
f = 1 MHz
= 75 V, ID = 2.8 A,
V
DD
V
= 10 V, R
GS
= 0 V to 10 V
GS
= 0 V to 5 V 2.4 3.4
GS
= 6 Ω
GEN
VDD = 75 V,
I
D
= 2.8 A
257 345 pF
5.3 11 ns
4.2 5.9 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1 .5 x 1.5 in . boa rd o f FR- 4 m ateria l. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
©2012 Fairchild Semiconductor Corporation
FDMC86244 Rev.C1
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 38 61 nC
= 25 °C; N-ch: L = 1.0 mH, IAS = 5.0 A, VDD = 135 V, VGS = 10 V.
J
V
GS
V
GS
= 2.8 A, di/dt = 100 A/μs
I
F
a.
53 °C/W when mounted on a
2
pad of 2 oz copper
1 in
= 0 V, IS = 2.8 A (Note 2) 0.81 1.3
= 0 V, IS = 2 A (Note 2) 0.79 1.2
48 76 ns
is guaranteed by design while R
θJC
b.
125 °C/W when mounted on
a minimum pad of 2 oz copper
2
θCA
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V
is determined by
FDMC86244 N-Channel Power Trench
012345
0
3
6
9
12
VGS = 4 V
VGS = 5 V
VGS = 5.5 V
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 6 V
VGS = 10 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
036912
0
1
2
3
4
5
VGS = 4 V
VGS = 6 V
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
V
GS
= 5 V
VGS = 4.5 V
VGS = 5.5 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
ID = 2.8 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANC E
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
100
200
300
400
500
TJ = 125 oC
ID = 2.8 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOL TAG E (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
23456
0
3
6
9
12
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURC E V OLTAGE (V)
0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
20
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics
= 25 °C unless otherwise noted
J
Figure 2.
Norm a l i z e d O n -Resistan c e
vs Drain Current and Gate Voltage
®
MOSFET
Fi g ure 3 . Nor m aliz e d On R esis t ance
vs Junction Temperature
©2012 Fairchild Semiconductor Corporation
FDMC86244 Rev.C1
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gate to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
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FDMC86244 N-Channel Power Trench
012345
0
2
4
6
8
10
ID = 2.8 A
VDD = 75 V
V
DD
= 100 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 50 V
0.1 1 10 100
1
10
100
1000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.001 0.0 1 0.1 1 2
1
2
4
6
8
10
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
2
4
6
8
10
V
GS
= 6 V
R
θJC
= 4.7 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
0.1 1 10 100 500
0.001
0.01
0.1
1
10
20
100 ms
10 s
10 ms
100 μs
DC
1 s
1 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10-410-310-210
-1
110
100 1000
0.5
1
10
100
1000
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
Capacitance vs Drain
to Source Voltage
®
MOSFET
Figure 9.
Unc l a m p e d I ndu c t i v e
Switching Capability
©2012 Fairchild Semiconductor Corporation
FDMC86244 Rev.C1
Figure 11. Forward Bias Safe
Op
erating Area
Figure 10.
Ma ximum Con tin uous Drai n
Current vs Case Temperature
Figure 12.
Sing le Pulse Maximum
Power Dissipation
4
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FDMC86244 N-Channel Power Trench
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
2
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PU L SE DURATION (sec)
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
= 25 °C unless otherwise noted
J
®
MOSFET
©2012 Fairchild Semiconductor Corporation
FDMC86244 Rev.C1
5
www.fairchildsemi.com
Dimensional Outline and Pad Layout
FDMC86244 N-Channel Power Trench
®
MOSFET
©2012 Fairchild Semiconductor Corporation
FDMC86244 Rev.C1
6
www.fairchildsemi.com
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THEREIN, WHICH COVERS THESE PRODUCTS.
FDMC86244 N-Channel Power Trench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when prope rly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
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effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2012 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FDMC86244 Rev.C1
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