Fairchild FDMC86244 service manual

FDMC86244

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Bottom

Top

MLP 3.3x3.3

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8

N-Channel Power Trench® MOSFET

150 V, 9.4 A, 134 mΩ

Features

 Max r
 Max r
 Low Profile - 1 mm max in Power 33
 100% UIL Tested

 RoHS Compliant

= 134 mΩ at VGS = 10 V, ID = 2.8 A

DS(on)

= 186 mΩ at VGS = 6 V, ID = 2.4 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

Application

 DC - DC Conversion

February 2012

®

process that has

FDMC86244 N-Channel Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC86244 FDMC86244 Power 33 13’’ 12

©2012 Fairchild Semiconductor Corporation
FDMC86244 Rev.C1

Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current -Continuous TC = 25°C 9.4

-Pulsed 12
Single Pulse Avalanche Energy (Note 3) 12 mJ
Power Dissipation TC = 25°C 26
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to + 150 °C

Thermal Resistance, Junction to Case 4.7
Thermal Resistance, Junction to Ambient (Note 1a) 125

= 25 °C unless otherwise noted

A

= 25°C (Note 1a) 2.8

A

= 25°C (Note 1a) 2.3

A

1

mm 3000 units

A -Continuous T

W

°C/W

www.fairchildsemi.com

FDMC86244 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 120 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 106 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA22.64V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -9 mV/°C

D

V

= 10 V, ID = 2.8 A 105 134

GS

= 6 V, ID = 2.4 A 120 186

GS

= 10 V, ID = 2.8 A, TJ = 125 °C 199 254

V

GS

Forward Transconductance VDD = 10 V, ID = 2.8 A 8 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 32 45 pF
Reverse Transfer Capacitance 1.8 5 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g(TOT)
g(TOT)
gs
gd

Turn-On Delay Time
Rise Time 1.5 10 ns
Turn-Off Delay Time 9.9 20 ns
Fall Time 2.3 10 ns
Total Gate Charge V
Total Gate Charge V
Total Gate Charge 1.1 nC
Gate to Drain “Miller” Charge 1.0 nC

= 75 V, VGS = 0 V,

V

DS

f = 1 MHz

= 75 V, ID = 2.8 A,

V

DD

V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 5 V 2.4 3.4

GS

= 6 Ω

GEN

VDD = 75 V,
I

D

= 2.8 A

257 345 pF

5.3 11 ns

4.2 5.9 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1 .5 x 1.5 in . boa rd o f FR- 4 m ateria l. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting T

©2012 Fairchild Semiconductor Corporation
FDMC86244 Rev.C1

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 38 61 nC

= 25 °C; N-ch: L = 1.0 mH, IAS = 5.0 A, VDD = 135 V, VGS = 10 V.

J

V

GS

V

GS

= 2.8 A, di/dt = 100 A/μs

I

F

a.

53 °C/W when mounted on a

2

pad of 2 oz copper

1 in

= 0 V, IS = 2.8 A (Note 2) 0.81 1.3
= 0 V, IS = 2 A (Note 2) 0.79 1.2

48 76 ns

is guaranteed by design while R

θJC

b.

125 °C/W when mounted on
a minimum pad of 2 oz copper

2

θCA

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V

is determined by

FDMC86244 N-Channel Power Trench

012345

0

3

6

9

12

VGS = 4 V

VGS = 5 V

VGS = 5.5 V

VGS = 4.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 6 V

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

036912

0

1

2

3

4

5

VGS = 4 V

VGS = 6 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

V

GS

= 5 V

VGS = 4.5 V

VGS = 5.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

ID = 2.8 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

100

200

300

400

500

TJ = 125 oC

ID = 2.8 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOL TAG E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

23456

0

3

6

9

12

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURC E V OLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

20

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics

= 25 °C unless otherwise noted

J

Figure 2.

Norm a l i z e d O n -Resistan c e

vs Drain Current and Gate Voltage

®

MOSFET

Fi g ure 3 . Nor m aliz e d On R esis t ance

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation
FDMC86244 Rev.C1

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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