Fairchild FDMC86240 service manual

FDMC86240

G

S

S

S

D
D

D

D

5

6

7

8

3

2

1

4

Bottom

D

D

D

D

S

S

S

G

Top

Pin 1

MLP 3.3x3.3

N-Channel Power Trench® MOSFET

150 V, 16 A, 51 mΩ

Features

 Max r
 Max r
 Low Profile - 1 mm max in Power 33
 100% UIL Tested

 RoHS Compliant

= 51 mΩ at VGS = 10 V, ID = 4.6 A

DS(on)

= 70 mΩ at VGS = 6 V, ID = 3.9 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

Application

 DC - DC Conversion

July 2010

®

process that has

FDMC86240 N-Channel Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC86240 FDMC86240 Power 33 13 ’’ 12 mm 3000 units

©2010 Fairchild Semiconductor Corporation
FDMC86240 Rev.C

Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 16

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 20
Single Pulse Avalanche Energy (Note 3) 34 mJ
Power Dissipation TC = 25 °C 40
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 3.1
Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

A

= 25 °C 19

C

= 25 °C (Note 1a) 4.6

A

= 25 °C (Note 1a) 2.3

A

1

A

W

°C/W

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FDMC86240 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 120 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 101 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 2.9 4.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -9 mV/°C

D

V

= 10 V, ID = 4.6 A 44.7 51

GS

= 6 V, ID = 3.9 A 51.4 70

GS

= 10 V, ID = 4.6 A, TJ = 125 °C 84.5 97

V

GS

Forward Transconductance VDS = 10 V, ID = 4.6 A 15 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 79 105 pF
Reverse Transfer Capacitance 4.3 10 pF
Gate Resistance 0.5 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 1.7 10 ns
Turn-Off Delay Time 14 26 ns
Fall Time 3.1 10 ns
Total Gate Charge V
Total Gate Charge V
Total Gate Charge 2.8 nC
Gate to Drain “Miller” Charge 2.3 nC

= 75 V, VGS = 0 V,

V

DS

f = 1 MHz

= 75 V, ID = 4.6 A,

V

DD

V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 5 V 6 9 nC

GS

= 6 Ω

GEN

VDD = 75 V,
I

D

= 4.6 A

680 905 pF

8.2 17 ns

11 15 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting T

FDMC86240 Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 63 102 nC

= 25 °C; N-ch: L = 3 mH, IAS = 4.8 A, VDD = 150 V, VGS = 10 V.

J

V

GS

V

GS

= 4.6 A, di/dt = 100 A/μs

I

F

53 °C/W when mounted on a
1 in2 pad of 2 oz copper

= 0 V, IS = 4.6 A (Note 2) 0.79 1.3
= 0 V, IS = 2 A (Note 2) 0.75 1.2

58 93 ns

is guaranteed by design while R

θJC

125 °C/W when mounted on
a minimum pad of 2 oz copper

2

θCA

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V

is determined by

FDMC86240 N-Channel Power Trench

012345

0

5

10

15

20

VGS = 4.5 V

VGS = 6 V

VGS = 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5%MAX

VGS = 5.5 V

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 5 10 15 20

0.5

1.0

1.5

2.0

2.5

3.0

V

GS

= 10 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5%MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT(A)

V

GS

= 6 V

VGS = 5 V

VGS = 4.5 V

V

GS

= 5.5 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

ID = 4.6 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

45678910

0

50

100

150

200

ID = 4.6 A

TJ = 25 oC

TJ = 125 oC

V

GS

, GATE TO SOURCE VOL TA G E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX

23456

0

5

10

15

20

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5%MAX

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

20

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

®

MOSFET

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

FDMC86240 Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-Resis tance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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