Fairchild FDMC8622 service manual

FDMC8622

G

S

S

S

D
D

D

D

5

6

7

8

3

2

1

4

MLP 3.3X3.3

N-Channel Power Trench® MOSFET

100 V, 16 A, 56 mΩ

Features

 Max r
 Max r
 High performance trench technology for extremely low r
 High power and current handling capability in a widely used

surface mount package

 100% UIL Tested
 Termination is Lead-free and RoHS Compliant

= 56 mΩ at VGS = 10 V, ID = 4 A

DS(on)

= 100 mΩ at VGS = 6 V, ID = 3 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for
ruggedness.

Application

 POE Protection Switch

March 2012

®

process that has

r

, switching performance and

DS(on)

FDMC8622 N-Channel Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8622 FDMC8622 MLP 3.3X3.3 13 ’’ 12 mm 3000 units

©2012 Fairchild Semiconductor Corporation
FDMC8622 Rev.C1

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 16

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 30
Single Pulse Avalanche Energy (Note 3) 37 mJ
Power Dissipation TC = 25 °C 31
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case (Note 1) 4.0
Thermal Resistance, Junction to Ambient (Note 1a) 50

= 25 °C unless otherwise noted

A

C = 25 °C 16

A = 25 °C 4

= 25 °C (Note 1a) 2.5

A

1

A

W

°C/W

www.fairchildsemi.com

FDMC8622 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 69 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA22.94V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -9 mV/°C

D

V

= 10 V, ID = 4 A 43.7 56

GS

= 6 V, ID = 3 A 59.9 90

GS

= 10 V, ID = 4 A, TJ = 125 °C 76.4 98

V

GS

Forward Transconductance VDD = 10 V, ID = 4 A 8.9 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 72.5 96 pF
Reverse Transfer Capacitance 4.2 6 pF

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 1.0 Ω

302 402 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 1.6 10 ns
Turn-Off Delay Time 10.2 18 ns

= 50 V, ID = 4 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

Fall Time 2.2 10 ns
Total Gate Charge V
Total Gate Charge V
Total Gate Charge 1.4 nC

= 0 V to 10 V

GS

= 0 V to 5 V 3.0 4.1 nC

GS

VDD = 50 V,
I

= 4 A

D

Gate to Drain “Miller” Charge 1.4 nC

5.9 12 ns

5.2 7.3 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting T

©2012 Fairchild Semiconductor Corporation
FDMC8622 Rev.C1

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 28 45 nC

= 25 °C; N-ch: L = 3.0 mH, IAS = 5.0 A, VDD = 100 V, VGS = 10 V.

J

V

GS

V

GS

= 4 A, di/dt = 100 A/μs

I

F

a.

50 °C/W when mounted on a

2

pad of 2 oz copper

1 in

= 0 V, IS = 4 A (Note 2) 0.8 1.3
= 0 V, IS = 1.7 A (Note 2) 0.8 1.2

36 57 ns

is guaranteed by design while R

θJC

125 °C/W when mounted on

b.

a minimum pad of 2 oz copper

2

θCA

www.fairchildsemi.com

V

is determined by

FDMC8622 N-Channel Power Trench

01234

0

5

10

15

20

25

30

VGS = 5 V

VGS = 10 V

VGS = 6 V

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

VGS = 7 V

VGS = 6.5 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 5 10 15 20

0

1

2

3

4

V

GS

= 10 V

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT(A)

V

GS

= 6.5 V

VGS = 6 V

VGS = 5 V

V

GS

= 7 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 4 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESIST ANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0.0

0.1

0.2

0.3

0.4

0.5

ID = 4 A

TJ = 25 oC

TJ = 125 oC

V

GS

, GATE TO SOURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

0369

0

5

10

15

20

25

30

TJ = 25 oC

TJ = -55 oC

V

DS

= 5 V

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

TJ = 150 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.4 0.6 0.8 1.0 1.2

0.1

1

10

40

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

Normali z e d O n - R esistance

vs Drain Current and Gate Voltage

®

MOSFET

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

Figure 5. Transfer Characteristics

©2012 Fairchild Semiconductor Corporation
FDMC8622 Rev.C1

Figure 4.

On-Res istance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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