Fairchild FDMC86160 service manual

FDMC86160

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Pin 1

Pin 1

G

D

S

S

S

D

D

D

S

S

S

G

D

D

D

D

Power 33

N-Channel Power Trench® MOSFET

100 V, 43 A, 14 mΩ

Features

 Max r
 Max r
 High performance technology for extremely low r
 Termination is Lead-free and RoHS Compliant

= 14 mΩ at VGS = 10 V, ID = 9 A

DS(on)

= 23 mΩ at VGS = 6 V, ID = 7 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance. This
device is well suited for applications where ulta low R
required in small spaces such as High performance VRM, POL
and orring functions.

Applications

 Bridge Topologies
 Synchronous Rectifier

June 2012

® process that has

is

DS （on）

FDMC86160 N-Channel Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC86160 FDMC86160 Power33 13 ’’ 12 mm 3000 units

©2012 Fairchild Semiconductor Corporation
FDMC86160 Rev. C

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous TC = 25 °C 43

-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 181 mJ
Power Dissipation TC = 25 °C 54
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case (Note 1) 2.3
Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

A

= 25 °C (Note 1a) 9

A

= 25 °C (Note 1a) 2.3

A

1

A -Continuous T

W

°C/W

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FDMC86160 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 73 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA22.94V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -9 mV/°C

D

V

= 10 V, ID = 9 A 11.2 14

GS

= 6 V, ID = 7 A 16 23

GS

= 10 V, ID = 9 A, TJ = 125 °C 21 26

V

GS

Forward Transconductance VDD = 10 V, ID = 9 A 43 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 241 320 pF
Reverse Transfer Capacitance 11 20 pF

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 0.6 2.5 Ω

968 1290 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 3.6 10 ns
Turn-Off Delay Time 16 30 ns

= 50 V, ID = 9 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

Fall Time 3.4 10 ns
Total Gate Charge V
Total Gate Charge V
Total Gate Charge 4.4 nC

= 0 V to 10 V

GS

= 0 V to 6 V 9.8 15 nC

GS

= 50 V,

V

DD

I

= 9 A

D

Gate to Drain “Miller” Charge 3.5 nC

9.7 19 ns

15 22 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

= 0 V, IS = 9 A (Note 2) 0.79 1.3 V

V

SD

t

rr

Q

rr

Notes:

is determined with the devi ce m ount ed on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. EAS of 181 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 11 A, VDD = 100 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 35 A.

©2012 Fairchild Semiconductor Corporation
FDMC86160 Rev. C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 45 73 nC

a.

53 °C/W when mounted on a
1 in2 pad of 2 oz copper

SS

SF

DS

DF

G

GS

= 0 V, IS = 1.9 A (Note 2) 0.72 1.2 V

V

GS

= 9 A, di/dt = 100 A/μs

I

F

DF

G

2

47 75 ns

is guaranteed by design while R

θJC

b.

125 °C/W when mounted on
a minimum pad of 2 oz copper

SF

SS

DS

is determined by

θCA

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FDMC86160 N-Channel Power Trench

012345

0

10

20

30

40

50

VGS = 4.5 V

VGS = 6 V

VGS = 5.5 V

VGS = 7 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 5 V

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 1020304050

0

1

2

3

4

5

VGS = 10 V

VGS = 5.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 6 V

VGS = 7 V

VGS = 5 V

V

GS

= 4.5 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

ID = 9 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

45678910

0

10

20

30

40

50

60

TJ = 125 oC

ID = 9 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTA GE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

234567

0

10

20

30

40

50

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

No rm alize d O n-Res is tance

vs Drain Current and Gate Voltage

®

MOSFET

Fi gure 3 . No rmali zed On - Re sista nce

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation
FDMC86160 Rev. C

Figure 5. Transfer Characteristics

Figure 4.

On-R esistan ce vs Gat e to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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