Fairchild FDMC86116LZ service manual

FDMC86116LZ

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MLP 3.3x3.3

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N-Channel Power Trench® MOSFET

100 V, 7.5 A, 103 mΩ

Features

 Max r
 Max r
 HBM ESD protection level > 3 KV typical (Note 4)
 100% UIL Tested

 RoHS Compliant

= 103 mΩ at VGS = 10 V, ID = 3.3 A

DS(on)

= 153 mΩ at VGS = 4.5 V, ID = 2.7 A

DS(on)

General Description

This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced Power Trench
that has been special tailored to minimize the on-state
resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.

Application

 DC - DC Conversion

December 2011

®

process

FDMC86116LZ N-Channel Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC86116Z FDMC86116LZ Power 33 13 ’’ 12 mm 3000 units

©2011 Fairchild Semiconductor Corporation
FDMC86116LZ Rev.C

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 7.5

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 15
Single Pulse Avalanche Energy (Note 3) 12 mJ
Power Dissipation TC = 25 °C 19
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 6.5
Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

A

= 25 °C 9.6

C

= 25 °C (Note 1a) 3.3

A

= 25 °C (Note 1a) 2.3

A

1

A

W

°C/W

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FDMC86116LZ N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 73 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±10 μA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.8 2.2 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -6 mV/°C

D

V

= 10 V, ID = 3.3 A 79 103

GS

= 4.5 V, ID = 2.7 A 105 153

GS

= 10 V , ID = 3.3 A, TJ = 125 °C 136 178

V

GS

Forward Transconductance VDS = 5 V, ID = 3.3 A 11 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 45 60 pF
Reverse Transfer Capacitance 2.4 5 pF
Gate Resistance 0.7 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 1.3 10 ns
Turn-Off Delay Time 10 20 ns
Fall Time 1.4 10 ns
Total Gate Charge V
Total Gate Charge V
Total Gate Charge 0.8 nC
Gate to Drain “Miller” Charge 0.7 nC

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

= 50 V, ID = 3.3 A,

V

DD

V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 4.5 V 2 3 nC

GS

GEN

= 6 Ω

V

DD

I

D

= 50 V,

= 3.3 A

232 310 pF

4.5 10 ns

46nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

= 0 V, IS = 3.3 A (Note 2) 0.85 1.3

V

SD

t

rr

Q

rr

NOTES:

is determined with the devi ce m ount ed on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C; N-ch: L = 1.0 mH, IAS = 5.0 A, VDD = 90 V, VGS = 10 V.

4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

©2011 Fairchild Semiconductor Corporation
FDMC86116LZ Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 23 38 nC

a.

53 °C/W when mounted on a
1 in2 pad of 2 oz copper

SF

SS

DS

DF

G

GS

= 0 V, IS = 2 A (Note 2) 0.82 1.2

V

GS

= 3.3 A, di/dt = 100 A/μs

I

F

2

V

33 54 ns

is guaranteed by design while R

θJC

b.

125 °C/W when mounted on
a minimum pad of 2 oz copper

SF

SS

DS

DF

G

is determined by

θCA

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FDMC86116LZ N-Channel Power Trench

012345

0

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6

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12

15

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 3.5 V

VGS = 4.5 V

VGS = 10 V

VGS = 4 V

VGS = 3 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

03691215

0

1

2

3

4

5

VGS = 3.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4 V

VGS = 4.5 V

VGS = 3 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

ID = 3.3 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESIST ANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

100

200

300

400

500

TJ = 125 oC

ID = 3.3 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

123456

0

3

6

9

12

15

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

20

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

®

MOSFET

Fig ure 3. Norm a lized On Re s ista n ce

vs Junction Temperature

©2011 Fairchild Semiconductor Corporation
FDMC86116LZ Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-Resis tance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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