Fairchild FDMC8588DC service manual

FDMC8588DC

Top

Power 33

Bottom

D

D

D

D

G

S

S

S

Pin 1

Pin 1

S

S

S

G

D

D

D

D

N-Channel PowerTrench® MOSFET

25 V, 40 A, 5.7 mΩ

Features

 Max r

 State-of-the-art switching performance

 Lower output capacitance, gate resistance, and gate charge

boost efficiency

 Shielded gate technology reduces switch node ringing and

increases immunity to EMI and cross conduction

 RoHS Compliant

= 5.7 mΩ at VGS = 4.5 V, ID = 17 A

DS(on)

General Description

This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
diode reverse recovery performance.

Applications

 High side switching for high end computing

 High power density DC-DC synchronous buck converter

, fast switching speed and body

DS(on)

FDMC8588DC N-Channel PowerTrench

June 2012

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage (Note 5) 25 V

Gate to Source Voltage (Note 4) ±12 V

Drain Current - Continuous (Package limited) TC = 25 °C 40

- Continuous (Silicon Limited) T

- Continuous (Note 1a) 17

- Pulsed 60

Single Pulse Avalanche Energy (Note 3) 29 mJ

Power Dissipation TC = 25 °C 41

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 73

C

= 25 °C (Note 1a) 3.0

A

A

W

Thermal Characteristics

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

Thermal Resistance, Junction to Case (Top Source) 7.0

Thermal Resistance, Junction to Case (Bottom Drain) 3.0

Thermal Resistance, Junction to Ambient (Note 1a) 42

Thermal Resistance, Junction to Ambient (Note 1b) 105

Thermal Resistance, Junction to Ambient (Note 1i) 17

Thermal Resistance, Junction to Ambient (Note 1j) 26

Thermal Resistance, Junction to Ambient (Note 1k) 12

08DC FDMC8588DC

Power 33

13 ’’ 12 mm 3000 units

°C/W

©2012 Fairchild Semiconductor Corporation
FDMC8588DC Rev.C

1

www.fairchildsemi.com

FDMC8588DC N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250 μA , VGS = 0 V 25 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current VDS = 20 V, V

Gate to Source Leakage Current, Forward VGS = 12 V, V

I

= 250 μA , referenced to 25 °C 5 mV/°C

D

= 0 V 1 μA

GS

= 0 V 100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 0.8 1.2 1.8 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA , referenced to 25 °C -4 mV/°C

D

V

= 10 V, ID = 18 A 3.6 5.0

GS

= 4.5 V, ID = 17 A 4.1 5.7

GS

= 10 V, ID = 18 A,TJ = 125 °C 5.5 7.6

V

GS

Forward Transconductance VDD = 5 V, ID = 17 A 103 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 493 pF

Reverse Transfer Capacitance 63 pF

Gate Resistance 0.4 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g(TOT)

gs

gd

Turn-On Delay Time

Rise Time 3ns

Turn-Off Delay Time 25 ns

Fall Time 2ns

Total Gate Charge at 4.5V

Total Gate Charge 3.0 nC

Gate to Drain “Miller” Charge 3.0 nC

= 13 V, VGS = 0 V,

V

DS

f = 1 MHz

= 13 V, ID = 17A,

V

DD

V

= 10 V, R

GS

= 13 V, ID = 17 A

V

DD

GEN

= 6 Ω

1695 pF

8ns

12 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

©2012 Fairchild Semiconductor Corporation
FDMC8588DC Rev.C

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 10 nC

V

= 0 V, IS = 2 A (Note 2) 0.7 1.2 V

GS

= 0 V, IS = 17 A (Note 2) 0.8 1.2 V

V

GS

= 17 A, di/dt = 100 A/μs

I

F

2

25 ns

www.fairchildsemi.com

Thermal Characteristics

FDMC8588DC N-Channel PowerTrench

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

Notes:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

Thermal Resistance, Junction to Case (Top Source) 7.0

Thermal Resistance, Junction to Case (Bottom Drain) 3.0

Thermal Resistance, Junction to Ambient (Note 1a) 42

Thermal Resistance, Junction to Ambient (Note 1b) 105

Thermal Resistance, Junction to Ambient (Note 1c) 29

Thermal Resistance, Junction to Ambient (Note 1d) 40

Thermal Resistance, Junction to Ambient (Note 1e) 19

Thermal Resistance, Junction to Ambient (Note 1f) 23

Thermal Resistance, Junction to Ambient (Note 1g) 30

Thermal Resistance, Junction to Ambient (Note 1h) 79

Thermal Resistance, Junction to Ambient (Note 1i) 17

Thermal Resistance, Junction to Ambient (Note 1j) 26

Thermal Resistance, Junction to Ambient (Note 1k) 12

Thermal Resistance, Junction to Ambient (Note 1l) 16

a.

42 °C/W when mounted on a
1 in2 pad of 2 oz copper

is guaranteed by design while R

θJC

b.

105 °C/W when mounted on
a minimum pad of 2 oz copper

is determined by

θCA

°C/W

®

MOSFET

SF

SS

DS

DF

SF

SS

DS

DF

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper

d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper

e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper

f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

g. 200FPM Airflow, No Heat Sink,1 in

h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper

i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in

j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper

k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in

l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. E

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

5. The continuous Vds rating is 25V; however, a pulse of 28 V peak voltage for no longer than 3ns duration at 500KHz frequency can be applied.

G

2

pad of 2 oz copper

2

pad of 2 oz copper

of 29 mJ is based on starting TJ = 25 °C, L = 1.2 mH, IAS = 7 A, VDD = 23 V, VGS = 10V. 100% tested at L = 0.1 mH, IAS = 16 A.

AS

G

2

pad of 2 oz copper

©2012 Fairchild Semiconductor Corporation
FDMC8588DC Rev.C

3

www.fairchildsemi.com