Fairchild FDMC8554 service manual

February 2007

FDMC8554 N-Channel PowerTrench

FDMC8554
N-Channel Power Trench

20V, 16.5A, 5mΩ
Features

 Max r
 Max r
 Low Profile - 1mm max in a MicroFET 3.3x3.3 mm
 RoHS Compliant

= 5mΩ at VGS = 10V, ID = 16.5A

DS(on)

= 6.4mΩ at VGS = 4.5V, ID = 14A

DS(on)

Bottom

8

7

6

5

3

4

D

D

1

2

®

MOSFET

Top

D

D

General Description

This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench process.
It has been optimized for switching performance and ultra low
rdson.

Application

 Synchronous rectifier
 O

Ring FET

 POL rectifier

G

S

S

S

tm

®

MOSFET

D

5

D

6
7

D
D

8

G

4
3

S

2

S

1

S

Power 33

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8554 FDMC8554 Power 33 7’’ 8mm 3000 units

©2007 Fairchild Semiconductor Corporation
FDMC8554 Rev.C

Drain to Source Voltage 20 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 16.5

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 36
Power Dissipation TC = 25°C 41
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 3
Thermal Resistance, Junction to Ambient (Note 1a) 60

= 25°C unless otherwise noted

A

= 25°C 72

C

= 25°C (Note 1a) 16.5

A

= 25°C (Note 1a) 2.0

A

1

A

W

°C/W

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FDMC8554 N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆BV
∆T

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 20 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±20V, V

I

= 250µA, referenced to 25°C 15.7 mV/°C

D

V

= 16V, 1

DS

= 0V TJ = 125°C 100

V

GS

= 0V ±100 nA

DS

On Characteristics

V

GS(th)

∆V
∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 1.8 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

I

= 250µA, referenced to 25°C -6.1 mV/°C

D

V

= 10V, ID = 16.5A 3.6 5.0

GS

= 4.5V, ID = 14A 4.6 6.4

GS

= 10V , ID = 16.5A, TJ = 125°C 5.4 7.1

V

GS

Forward Transconductance VDS = 5V, ID = 16.5A 62 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 795 1060 pF
Reverse Transfer Capacitance 510 765 pF

= 10V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance f = 1MHz 1.2 Ω

2540 3380 pF

mΩV

µA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 10 20 ns
Turn-Off Delay Time 32 51 ns
Fall Time 714ns
Total Gate Charge at 10V
Total Gate Charge at 4.5V 24 34 nC
Gate to Source Gate Charge 8.5 nC
Gate to Drain “Miller” Charge 10 nC

VDD = 10V, ID = 16.5A
V

= 10V, R

GS

GEN

VDD = 10V, ID = 16.5A

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 mat erial. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 22 33 nC

a. 60°C/W when mounted on
a 1 in2 pad of 2 oz copper

= 0V, IS = 16.5A (Note 2) 0.8 1.3 V

GS

= 16.5A, di/dt = 100A/µs

I

F

= 6Ω

13 24 ns

44 62 nC

31 47 ns

is guaranteed by design while R

θJC

b. 135°C/W when mounted on a
minimum pad of 2 oz copper

is determined by

θCA

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

FDMC8554 Rev.C

2

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FDMC8554 N-Channel PowerTrench

Typical Characteristics T

200

V

=5V

150

100

50

, DRAIN CURRENT (A)

D

I

0

012345

VDS, DRAIN TO SOURCE VOLTA GE (V)

Figure 1. O n - R e g i o n C h aracteristics Figure 2. N ormaliz e d O n - R e s i s t a n c e

1.6

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

1.4

1.2

1.0

NORMALIZED

0.8

0.6

DRAIN TO SOURCE ON-RES ISTANCE

-75 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

Figu r e 3 . Normal i z e d On- Res i s tance

vs Junction Temperature

100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

75

V

= 5V

DD

50

, DRAIN CURRENT ( A)

25

D

I

0

01234

VGS, GATE TO SOURCE VOLTA GE (V)

Figu re 5. Transfer Char acteristi cs Figure 6. Sourc e to Drain Diode

GS

V

= 10V

GS

PULSE DURA TION = 80µs
DUTY CYCLE = 0.5%MAX

TJ = 25oC

= 25°C unless otherwise noted

J

VGS = 4.5V

VGS = 4V

VGS = 3.5V

ID = 16.5A
V

= 10V

GS

TJ = 150oC

TJ = -55oC

3

V

= 3.5V

GS

2

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

V

= 4V

GS

V

GS

=4.5V

1

NORMALIZED

0

0 50 100 150 2 00

DRAIN TO SOURCE ON-RESISTANCE

ID, DRAIN CURRENT(A)

VGS = 10V

vs Drain Current and Gate Voltage

20

ID = 16.5A

(mΩ)

15

10

, DRAIN TO

DS(on)

r

5

SOURCE ON-RESISTANCE

0

345678910

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

TJ = 125oC

TJ = 25oC

Figure 4. On-Resistance vs Gate to

Source Voltage

100

V

= 0V

GS

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

1E-3

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150oC

TJ = -55oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Forward Voltage vs Source Current

V

GS

TJ = 25oC

= 5V

®

MOSFET

FDMC8554 Rev.C

3

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