Fairchild FDMC8462 service manual

tm

FDMC8462

N-Channel Power Trench® MOSFET

40V, 20A, 5.8mΩ

Features

 Max r
 Max r
 Low Profile - 1mm max in Power 33
 100% UIL Tested

 RoHS Compliant

= 5.8mΩ at VGS = 10V, ID = 13.5A

DS(on)

= 8.0mΩ at VGS = 4.5V, ID = 11.8A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

Application

 DC - DC Conversion

March 2008

®

process that has

FDMC8462 N-Channel Power Trench

®

MOSFET

Pin 1

Bottom

S

S

S

G

5

D
D

6

D

7

8

D

D

D

D

D

Top

Power 33

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 20

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 216 mJ
Power Dissipation TC = 25°C 41
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

A

= 25°C 64

C

= 25°C (Note 1a) 14

A

= 25°C (Note 1a) 2.0

A

Thermal Characteristics

4

G

S

3

S

2

S

1

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 3
Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8462 FDMC8462 Power 33 13’’ 12mm 3000 units

©2008 Fairchild Semiconductor Corporation
FDMC8462 Rev.C

°C/W

1

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FDMC8462 N-Channel Power Trench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current VGS = ±20V, V

ID = 250µA, referenced to 25°C 31 mV/°C

= 0V, VDS = 32V, 1 µA

GS

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 2.0 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 5V, ID = 13.5A 60 S

ID = 250µA, referenced to 25°C -6.6 mV/°C
VGS = 10V, ID = 13.5A 4.7 5.8

VGS = 10V , ID = 13.5A, TJ = 125°C 7.1 9.3

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 545 725 pF
Reverse Transfer Capacitance 80 120 pF

VDS = 20V, VGS = 0V,
f = 1MHz

2000 2660 pF

Gate Resistance f = 1MHz 2.7 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

g

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 4 10 ns
Turn-Off Delay Time 27 43 ns

VDD = 20V, ID = 13.5A,
VGS = 10V, R

GEN

= 6Ω

12 21 ns

Fall Time 3 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 6 nC

= 0V to 10V

GS

= 0V to 4.5V 15 21 nC

GS

VDD = 20V,

30 43 nC

ID = 13.5A

Gate to Drain “Miller” Charge 5 nC

mΩVGS = 4.5V, ID = 11.8A 6.4 8.0

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR- 4 mat erial . R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

3. Starting T

FDMC8462 Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 20 32 nC

= 25oC; N-ch: L = 3 mH, IAS = 12A, VDD = 40V, VGS = 10V

J

a.

53°C/W when mounted on a

2

pad of 2 oz copper

1 in

V

= 0V, IS = 13.5A (Note 2) 0.8 1.3

GS

V

= 0V, IS = 1.7A (Note 2) 0.7 1.2

GS

IF = 13.5A, di/dt = 100A/µs

θJC

b.

2

35 57 ns

is guaranteed by design while R

125°C/W when mounted on a
minimum pad of 2 oz copper

V

is determined by

θCA

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FDMC8462 N-Channel Power Trench

Typical Characteristics T

50

VGS = 10V

40

30

20

, DRAIN CURRENT (A)

10

D

I

0

0.0 0.5 1.0 1.5

Figure 1.

1.8

ID = 13.5A

= 10V

V

1.6

GS

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

VGS = 4.5V
VGS = 4V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

On-Region Characteristics Figure 2.

T

, JUNCTION TEMPERATURE (

J

= 25°C unless otherwise noted

J

VGS = 3.5V

VGS = 3V

o

C)

5.0

4.5

4.0

VGS = 3V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

3.5

VGS = 3.5V

V

= 4V

GS

NORMALIZED

3.0

2.5

2.0

1.5

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5
01020304050

I

D

V

= 4.5V

GS

, DRAIN CURRENT(A)

V

= 10V

GS

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

30

25

(mΩ)

ID = 13.5A

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

20

15

DRAIN TO

,

10

DS(on)

r

5

SOURCE ON-RESISTANCE

0

246810

V

, GATE TO SO U RCE VOLTAGE (V)

GS

Figure 4.

On-Resis tance vs Gate to

TJ = 125oC

TJ = 25oC

Source Voltage

®

MOSFET

50

40

30

20

, DRAIN CURRENT (A)

10

D

I

FDMC8462 Rev.C

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

V

= 5V

DS

TJ = 150oC

TJ = 25oC

TJ = -55oC

0

12345

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

50

V

= 0V

GS

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Diode

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

3

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