Fairchild FDMC8321L service manual

FDMC8321L

Top

Power 33

Bottom

D

D

D

D

S

S

S

G

Pin 1

S

S

S

G

D

D

D

D

N-Channel Power Trench® MOSFET

40 V, 49 A, 2.5 mΩ
Features

 Max r
 Max r
 Advanced Package and Silicon combination for low r

and hign efficiency

 Next Generation enhanced body diode technology,

engineered for soft recovery

 100% UIL tested
 RoHS Compliant

= 2.5 mΩ at VGS = 10 V, ID = 22 A

DS(on)

= 4.1 mΩ at VGS = 4.5 V, ID = 18 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
convertional switching PWM contollers. It has been optimized for
low gate charge, low
reverse recovery performance.

Applications

 Synchronous rectifier
 Load switch/Orring
 Motor switch

December 2011

r

, fast switching speed body diode

DS(on)

FDMC8321L N-Channel PowerTrench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8321L FDMC8321L Power33 13 ’’ 12 mm 3000 units

©2011 Fairchild Semiconductor Corporation
FDMC8321L Rev.C

Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limit) TC = 25 °C 49

-Continuous (Silicon limit) T

-Continuous T

-Pulsed 100
Single Pulse Avalanche Energy (Note 3) 86 mJ
Power Dissipation TC = 25 °C 40
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case (Note 1) 3.1
Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

A

= 25 °C 100

C

= 25 °C (Note 1a) 22

A

= 25 °C (Note 1a) 2.3

A

1

A

W

°C/W

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FDMC8321L N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 40 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 32 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 22 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA11.73V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -5 mV/°C

D

V

= 10 V, ID = 22 A 1.9 2.5

GS

= 4.5 V, ID = 18 A 2.7 4.1

GS

= 10 V, ID = 22 A, TJ = 125 °C 2.8 3.7

V

GS

Forward Transconductance VDS = 5 V, ID = 22 A 114 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 1000 1330 pF
Reverse Transfer Capacitance 60 90 pF
Gate Resistance 0.7 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 6.1 12 ns
Turn-Off Delay Time 32 51 ns
Fall Time 4.9 10 ns
Total Gate Charge at 10 V
Total Gate Charge at 5 V 21 32 nC
Total Gate Charge 7.7 nC
Gate to Drain “Miller” Charge 5.8 nC

= 20 V, VGS = 0 V,

V

DS

f = 1 MHz

= 20 V, ID = 22 A,

V

DD

V

= 10 V, R

GS

V

= 20 V, ID = 22 A

DD

GEN

= 6 Ω

2930 3900 pF

12 22 ns

44 61 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3.Starting T

FDMC8321L Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 20 33 nC

SS

SF

DF

DS

G

= 25 °C; N-ch: L = 0.3 mH, I

J

= 24 A, V

AS

V
V

I

53 °C/W when mounted on a
1 in2 pad of 2 oz copper

= 36 V, VGS = 10 V.

DD

= 0 V, IS = 2 A (Note 2) 0.69 1.2

GS

= 0 V, IS = 22 A (Note 2) 0.77 1.3

GS

= 22 A, di/dt = 100 A/μs

F

2

θJC

SF

SS

DS

DF

G

41 65 ns

is guaranteed by design wh ile R

125 °C/W when mounted on
a minimum pad of 2 oz copper

V

is determined by

θCA

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FDMC8321L N-Channel PowerTrench

0 0.5 1.0 1.5 2.0

0

20

40

60

80

100

VGS = 3 V

VGS = 4.5 V

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

VGS = 3.5 V

VGS = 4 V

VGS = 10 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

020406080100

0

1

2

3

4

5

6

VGS = 4.5 V

VGS = 10 V

VGS = 4 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 3.5 V

VGS = 3 V

-75 -50 -25 0 25 50 75 100 125 150

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

ID = 22 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATUR E (

o

C)

246810

0

2

4

6

8

10

TJ = 125 oC

ID = 22 A

TJ = 25 oC

V

GS

, GATE TO S OURCE VOLTAG E (V )

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

1.52.02.53.03.54.0

0

20

40

60

80

100

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norma l i z e d O n - Resistanc e

vs Drain Current and Gate Voltage

®

MOSFET

Fi g ure 3 . Norm aliz e d On R esis t ance

vs Junction Temperature

FDMC8321L Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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