Fairchild FDMC8296 service manual

FDMC8296

N-Channel Power Trench®MOSFET

30V, 18A, 8.0m:

Features

 Max r

 Max r

 High performance trench technology for extr

 Termination is Lead-free and RoHS Compliant

= 8.0m: at VGS = 10V, ID = 12A

DS(on)

= 13.0m: at VGS = 4.5V, ID = 10A

DS(on)

emely low r

DS(on)

September 2010



General Description

This N-Channel MOSFET is produced using
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistan
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.

®

process that has

Application

 DC - DC Buck Converter

ook battery power management

 Noteb

 Load switch in Notebook

Fairchild

ce. This

FDMC8296 N-Channel Power Trench

®

MOSFET

Top

Pin 1

Bottom

G

S

S

S

D

D

D

D

5

D

D

6

D

7

8

D

MLP 3.3x3.3

MOSFET Maximum Ratings T

Symbol Parameter Ratings

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 30 V

Gate to Source Voltage ±2

Drain Current -Continuous (Package limited) TC= 25°C 18

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 52

e Pulse Avalanche Energy (Note 3) 72 mJ

Singl

Power Dissip

Power

Operating and Storage Junction Temperature Range -55 to +150

ation T

Dissipation T

= 25°C unless otherwise noted

A

= 25°C 44

C

= 25°C

A

= 25°C 27

C

= 25°C

A

(Note 1a) 12

(Note 1a) 2.3

Thermal Characteristics

G

4

S

3

S

2

S

1

Units

0 V

A

W

°C

R

TJC

R

TJA

Thermal Resistance

Thermal Resistance, Junction to Ambient

, Junction to Case 4.6

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8296 FDMC8296 MLP 3.3X3.3 13 ’’

©2010 Fairchil
FDMC8296 Rev.C1

d Semiconductor Corporation

(Note 1a) 53

12 mm 3000 units

1

°C/W

www.fairchildsemi.com

FDMC8296 N-Channel Power Trench

Electrical Characteristics T

l Parameter Test Conditions Min Typ Max Units

Symbo

Off Characterist

BV

DSS

'BV

DSS

'T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

'V

GS(th)

'T

J

r

DS(on)

g

FS

Dynamic Characte

C

iss

C

oss

C

s

rs

R

g

ics

Drain to Source Breakdown Volt

Breakdown Voltage Temperature

ficient

Coef

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V, VDS= 0V ±1

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage
T

emperature Coefficient

Static Drain to

Forward T

Source On Resistance

ransconductance V

ristics

Input Capacitance

Output Capacit

Reverse Transfer Capacit

Gate Resistance f = 1MHz 0.9 :

ance 513 685

ance 87 135 pF

= 25°C unless otherwi

J

age I

= 250PA, VGS = 0V 30 V

D

I

= 250PA, referenced to 25°C 17 mV/°C

D

V

DS

V

GS

V

GS

= 250PA, referenced to 25

I

D

V

GS

GS

V

GS

DD

V

DS

f = 1MHz

se noted

= 24V, 1

= 0V, TJ = 125°C 250

00 nA

= VDS, ID = 250PA 1.0 1.9

3.0 V

°C -6 mV/°C

= 10V, ID = 12A 6.5 8.0

= 4.5V, ID = 10A 9.5 13.0

= 10V, ID = 12A, TJ = 125°C 9.0 12.8

= 5V, ID = 12A 44 S

= 15V, VGS = 0V,

1038 1385 pF

m:V

PA

®

MOSFET

pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay T

ime

Rise Time 310

Turn-Off Delay T

Fall T

ime 210

Total Gate Charge

Total Gate Charge

Gate to Drain “Miller”

ime 19 35 ns

3nC

Charge 2.5 nC

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

is dete

1. R

TJA

the user's board design.

Source to Drain Diode Forward Volt

Reverse Recovery T

ime

Reverse Recovery Charge 9 18

2

rmined with the device mounted on a 1in

pad 2

a. 53 °C/W whe
a 1 i n

= 15V, ID = 12A,

V

DD

= 10V, R

V

GS

V

= 0V to 10V

GS

V

= 0V to 4.5V 7.

GS

= 0V, IS= 12A (Note 2) 0.8

V

age

oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

2

pad of

GS

= 0V, IS= 1.9A

V

GS

= 12A, di/dt = 100A/Ps

I

F

n mounted on

2 oz copper

GEN

= 6:

V

= 15V,

DD

= 12A

I

D

(Note 2) 0.73 1.2

918ns

16 23 nC

6 10.6 nC

2 1.3

25 45

is guar

anteed by design while R

TJC

b.125 °C/W when mounted on
a minimum pad of 2 oz copper

is determined

TCA

ns

ns

V

ns

nC

by

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

of 72 mJ is based on starting T = 25 C, L = 1 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS= 5.7 A.

3. E



AS

©2010 Fairchild Semiconductor Corporation
FDMC8296 Rev.C1

2

www.fairchildsemi.com

FDMC8296 N-Channel Power Trench

Typical Characteristics T

50

VGS = 10V

40

30

20

, DRAIN CURRENT (A)

10

D

I

0

012345

Figure 1.

1.8

ID = 12A
V

1.6

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

VGS = 4.5V

VGS = 4V

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

On-Region Characteristics Figure 2.

= 10V

GS

, JUNCTION TEMPERATURE (

T

J

vs Junction Temperature

= 25°C unless otherwise noted

J

VGS = 3.5V

VGS = 3V

o

C)

6

PULSE DURATION = 80Ps

5

DUTY CYCLE = 0.5%MAX

VGS = 3V

4

VGS = 3.5V

V

V

= 4V

GS

GS

= 4.5V

NORMALIZED

3

2

1

V

=10V

DRAIN TO SOURCE ON-RESISTANCE

0

0 1020304050

, DRAIN CURRENT(A)

I

D

GS

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

50

40

(m:)

30

DRAIN TO

,

20

DS(on)

r

10

SOURCE ON-RESISTANCE

0

TJ= 25oC

246810

V

GS

Figure 4.

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

ID= 12A

TJ= 125oC

, GATE TO SOURCE VOLTAGE (V)

Source Voltage

®

MOSFET

50

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

40

VDS= 5V

30

20

TJ= 150oC

, DRAIN CURRENT (A)

10

D

I

0

12345

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

©2010 Fairchild Semiconductor Corporation
FDMC8296 Rev.C1

TJ= 25oC

TJ= -55oC

50

V

= 0V

GS

10

1

TJ= 150oC

TJ = 25oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55oC

Forward Voltage vs Source Current

3

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