Fairchild FDMC8200S service manual

FDMC8200S

Bottom

Power33

Pin 1

G1

D1

D

2

/

S

1

G2

S2

V

IN

V

IN

V

IN

V

IN

S

W

I

T

C

H

N

O

D

E

G

LS

GND

G

HS

Dual N-Channel PowerTrench® MOSFET

30 V, 10 mΩ, 20 mΩ

FDMC8200S Dual N-Channel PowerTrench

March 2011

Features

Q1: N-Channel

 Max r  Max r

Q2: N-Channel

 Max r  Max r  RoHS Compliant

= 20 mΩ at VGS = 10 V, ID = 6 A

DS(on)

= 32 mΩ at VGS = 4.5 V, ID = 5 A

DS(on)

= 10 mΩ at VGS = 10 V, ID = 8.5 A

DS(on)

= 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A

DS(on)

General Description

This device includes two specialized N-Channel MOSFETs in a due power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.

Applications

 Mobile Computing  Mobile Internet Devices  General Purpose Point of Load

Q 2

5 6 7 8

Q 1

4 3 2 1

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

E

AS

P

D

TJ, T

STG

Drain to Source Voltage 30 30 V Gate to Source Voltage (Note 4) ±20 ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 18 13

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 40 27 Single Pulse Avalanche Energy (Note 3) 12 32 Power Dissipation for Single Operation TA = 25°C 1.9 Power Dissipation for Single Operation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

C

= 25 °C 23 46

C

= 25 °C 6

A

= 25°C 0.7

A

1a

1a 1c

8.5

2.5

1.0

1b

1b 1d

A

W

Thermal Characteristics

R

θJA θJA

R

θJC

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8200S FDMC8200S Power 33 13” 12

Thermal Resistance, Junction to Ambient 65 Thermal Resistance, Junction to Ambient 180 Thermal Resistance, Junction to Case 7.5 4.2

1a

1c

mm 3000 units

50

125

1b

1d

°C/WR

FDMC8200S Dual N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

ΔBV ΔT

I

DSS

I

GSS

DSS

DSS J

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current V

Gate to Source Leakage Current V

= 250 μA, VGS = 0 V

D

I

= 1mA, V

D

I

= 250 μA, referenced to 25°C

D

I

= 1mA, referenced to 25°C

D

= 24 V, V

DS

= ±20 V, V

GS

= 0 V

GS

= 0 V

DS

Q1Q230

30

Q1 Q2

V

14 13

mV/°C

1

500 100

100nAnA

I

On Characteristics

V

GS(th)

ΔV ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance

= VDS, I

GS

V

= VDS, ID = 1mA

GS

I

= 250 μA, referenced to 25°C

D

I

= 1mA, referenced to 25°C

D

= 10 V, ID = 6 A

V

GS

V

= 4.5 V, ID = 5 A

GS

V

= 10 V, ID = 6 A, T

GS

V

= 10 V, ID = 8.5 A

GS

V

= 4.5 V, ID = 7.2 A

GS

V

= 10 V, ID = 8.5 A, T

GS

V

= 5 V, ID = 6 A

DD

V

= 5 V, ID = 8.5 A

DD

= 250 μA

D

= 125°C

J

= 125°C

J

Q1Q21.0

1.0

Q1 Q2

Q1

Q2

Q1 Q2

2.3

2.0

-5

-6

16 24 22

7.8

10.3

11.4 29

43

3.0

3.0 mV/°C

20 32 28

10.0

13.5

13.1

μA

V

mΩ

S

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

gs

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge V

Gate to Source Charge

Gate to Drain “Miller” Charge

= 15 V, VGS = 0 V, f = 1 MHZ

V

DS

Q1 V

= 15 V, ID = 1 A,

DD

V

= 10 V, R

GS

GEN

= 6 Ω

Q2

= 15 V, ID = 1 A,

V

DD

V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 4.5 V

GS

GEN

= 6 Ω

Q1 V

DD

I

= 6 A

D

Q2 V

DD

I

= 8.5 A

D

= 15 V,

= 15 V

Q1 Q2

Q1Q20.2

0.2

Q1 Q2

495

660

1080

1436

145

195

373

495

20 35

1.4

1.2

11

7.62015

3.1

1.81010 35

21

1.3

8.51017

7.3

15.71022

3.1

7.2

1.8

3 1

1.9

30 52

4.2

3.6

56 34

4.3 10

pF

Ω

ns

nC

Electrical Characteristics T

a.65 °C/W when mounted on a 1 in

2

pad of 2 oz copper

c. 180 °C/W when mounted on a minimum pad of 2 oz copper

b.50 °C/W when mounted on a 1 in

2

pad of 2 oz copper

d. 125 °C/W when mounted on a minimum pad of 2 oz copper

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

= 0 V, IS = 6 A (Note 2)

V

GS

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

by the user's board design.

Source-Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

V

= 0 V, IS = 8.5 A (Note 2)

GS

V

= 0 V, IS = 1.3 A (Note 2)

GS

Q1 I

= 6 A, di/dt = 100 A/s

F

Q2 I

= 8.5 A, di/dt = 300 A/s

F

Q1 Q2 Q2

Q1 Q2

is guaranteed by design while R

θJC

1.2

0.8

1.2

0.8

0.6 13

24

20

32

2.31510

24

θCA

is determined

ns

nC

FDMC8200S Dual N-Channel PowerTrench

V

®

MOSFET

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3.Starting Q1: T = 25 °C, L = 1 mH, I = 5 A, Vgs = 10V, Vdd = 27V, 100% test at L = 3 mH, I = 4 A; Q2: T = 25°C, L = 1 mH, I = 8 A, Vgs = 10V, Vdd = 27V, 100% test at L = 3 mH, I = 3.2 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

FDMC8200S Dual N-Channel PowerTrench

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

10

20

30

40

VGS = 10 V

VGS = 4 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 3.5 V

VGS = 4.5 V

VGS = 6 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 10203040

0

1

2

3

4

VGS = 3.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4 V

VGS = 4.5 V

VGS = 6 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.8

1.0

1.2

1.4

1.6

ID = 6 A V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

20

40

60

80

100

TJ = 125 oC

ID = 6 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTA GE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

2.0 2.5 3.0 3.5 4.0 4.5

0

10

20

30

40

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

40

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics (Q1 N-Channel) T

Figure 1.

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

Nor ma liz ed On- Res is tan ce

vs Drain Current and Gate Voltage

®

MOSFET

Fi gu re 3. No rmalized On Resistance

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resi stance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current