Fairchild FDMC8200 service manual
FDMC8200
Dual N-Channel PowerTrench® MOSFET
30 V, 9.5 mΩ and 20 mΩ
FDMC8200 Dual N-Channel PowerTrench
June 2009
Features
Q1: N-Channel
Max r
Max r
Q2: N-Channel
Max r
Max r
RoHS Compliant
Pin 1
= 20 mΩ at VGS = 10 V, ID = 6 A
DS(on)
= 32 mΩ at VGS = 4.5 V, ID = 5 A
DS(on)
= 9.5 mΩ at VGS = 10 V, ID = 9 A
DS(on)
= 13.5 mΩ at VGS = 4.5 V, ID = 7 A
DS(on)
G1
D1
D1
BOTTOM
D1
D1
D2/S1
G2
S2
S2
S2
Power 33
General Description
This device includes two specialized N-Channel MOSFETs in a
dual Power33 (3mm x 3mm MLP) package. The switch node
has been internally connected to enable easy placement and
routing of synchronous buck converters. The control
MOSFET (Q1) and synchronous MOSFET (Q2) have been
designed to provide optimal power efficiency.
Applications
Mobile Computing
Mobile Internet Devices
General Purpose Point of Load
N
N
I
I
V
V
N
N
I
I
V
V
N
N
I
I
V
V
S
S
H
H
G
G
N
N
I
I
V
V
T
T
I
I
W
W
S
S
E
E
D
D
O
O
N
N
H
H
C
C
G
G
D
D
N
N
G
G
D
D
N
N
G
G
S
S
L
L
G
G
S2
S2
S2
D
D
N
N
G2
Q2
Q2
5
5
6
6
7
7
8
8
Q1
Q1
D1
4
4
D1
3
3
D1
2
2
G1
1
1
BOTTOM
®
MOSFET
MOSFET Maximum Ratings T
= 25 °C unless otherwise noted
C
Symbol Parameter Q1 Q2 Units
V
DS
V
GS
Drain to Source Voltage 30 30 V
Gate to Source Voltage (Note 3) ±20 ±20 V
Drain Current - Continuous (Package limited) TC = 25 °C 18 18
I
D
- Continuous (Silicon limited) T
- Continuous T
= 25 °C 23 45
C
= 25 °C 8
A
1a
12
1b
A
- Pulsed 40 40
P
D
TJ, T
STG
Power Dissipation TA = 25 °C 1.9
Power Dissipation T
= 25 °C 0.7
A
1a
1c
Operating and Storage Junction Temperature Range -55 to +150 °C
2.2
0.9
1b
1d
W
Thermal Characteristics
R
θJA
θJA
R
θJC
Thermal Resistance, Junction to Ambient 65
Thermal Resistance, Junction to Ambient 180
Thermal Resistance, Junction to Case 7.5 4
1a
1c
55
145
1b
1d
°C/WR
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMC8200 FDMC8200 Power 33 13 ” 12 mm 3000 units
©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDMC8200 Rev.A1
FDMC8200 Dual N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
= 250 µA, VGS = 0 V
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
D
I
= 250 µA, VGS = 0 V
D
ID = 250 µA, referenced to 25 °C
I
= 250 µA, referenced to 25 °C
D
V
= 24 V, V
DS
V
= 24 V, V
DS
Gate to Source Leakage Current VDS = 20 V, V
GS
GS
GS
= 0 V
= 0 V
= 0 V
Q1Q230
30
Q1
Q2
Q1
Q2
Q1
Q2
V
14
14
mV/°C
1
1
100
100nAnA
I
On Characteristics
V
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
= VDS, ID = 250 µA
GS
V
= VDS, ID = 250 µA
GS
ID = 250 µA, referenced to 25 °C
I
= 250 µA, referenced to 25 °C
D
= 10 V, ID = 6 A
V
GS
V
= 4.5 V, ID = 5 A
GS
V
= 10 V, ID = 6 A, TJ = 125 °C
GS
V
= 10 V, ID = 9 A
GS
V
= 4.5 V, ID = 7 A
GS
V
= 10 V, ID = 9 A, TJ = 125 °C
GS
V
= 5 V, ID = 6 A
DD
V
= 5 V, ID = 9 A
DD
Q1Q21.0
1.0
Q1
Q2
Q1
Q2
Q1
Q2
2.3
2.3
-5
-6
16
24
22
7.3
9.5
10
29
56
3.0
3.0
mV/°C
20
32
28
9.5
13.5
13
µA
V
mΩ
S
®
MOSFET
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V
Gate to Source Charge
Gate to Drain “Miller” Charge
495
= 15 V, VGS = 0 V, f = 1 MHZ
V
DS
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1180
145
330
20
30
1.4
1.4
660
1570
195
440
30
45
pF
pF
pF
Ω
11
Q1
V
= 15 V, ID = 1 A,
DD
V
= 10 V, R
GS
Q2
= 15 V, ID = 1 A,
V
DD
V
= 10 V, R
GS
GEN
GEN
= 6 Ω
= 6 Ω
Q1:
V
I
D
Q2:
V
I
D
= 15 V,
DD
= 6 A,
= 15 V,
DD
= 9 A,
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
3.1410
1.3610
7.31610
3.174.3
1.8
4.1
1.5
13
35
38
20
ns
23
ns
10
56
ns
60
ns
12
nC
22
nC
10
nC
1
nC
©2009 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FDMC8200 Rev.A1
FDMC8200 Dual N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Type Min Typ Max Units
Drain-Source Diode Characteristics
0.8
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
by the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
a.65 °C/W when mounted on
a 1 in
c. 180 °C/W when mounted on a
minimum pad of 2 oz copper
V
GS
V
GS
Q1
= 6 A, di/dt =
I
F
Q2
= 9 A, di/dt =
I
F
2
pad of 2 oz copper
= 0 V, IS = 6 A (Note 2)
= 0 V, IS = 9 A (Note 2)Q1Q2
100 A/μs
100 A/μs
Q1
Q2
Q1
Q2
is guaranteed by design while R
θJC
b.55 °C/W when mounted on
2
a 1 in
pad of 2 oz copper
d. 145 °C/W when mounted on a
minimum pad of 2 oz copper
1.2
0.8
1.2
13
24
21
34
2.3
5.61012
θCA
is determined
V
ns
nC
®
MOSFET
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
©2009 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com
FDMC8200 Rev.A1
FDMC8200 Dual N-Channel PowerTrench
Typical Characteristics (Q1 N-Channel) T
40
30
20
DRAIN CURRENT (A)
10
,
D
I
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Figure 1.
1.6
ID = 6 A
V
GS
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
On Region Characteristics Figure 2.
= 10 V
1.4
1.2
NORMALIZED
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.8
-75 -50 -25 0 25 50 75 100 125 150
T
,
JUNCTION TEMPERATURE
J
VGS = 10 V
VGS = 6 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
o
(
C
)
= 25 °C unless otherwise noted
J
4
3
VGS = 3.5 V
2
NORMALIZED
1
DRAIN TO SOURCE ON-RESISTANCE
0
0 10203040
I
,
D
Nor mal ize d On -Resista nce
vs Drain Current and Gate Voltage
100
)
Ω
m
80
(
60
DRAIN TO
,
40
DS(on)
r
20
TJ = 25 oC
SOURCE ON-RESISTANCE
0
246810
V
,
GS
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
V
= 4 V
GS
VGS = 4.5 V
VGS = 6 V
DRAIN CURRENT (A)
TJ = 125 oC
GATE TO S OURCE VOLTAGE (V)
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
ID = 6 A
V
GS
= 10 V
®
MOSFET
Figure 3 . N ormaliz ed On Resis ta nce
vs Junction Temperature
40
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
30
V
= 5 V
DS
20
10
, DRAIN CURRENT (A)
D
I
0
2.0 2.5 3.0 3.5 4.0 4.5
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
VGS, GATE TO SOURCE V OLTAGE (V)
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gat e to
Source Voltage
40
V
= 0 V
GS
10
1
TJ = 150 oC
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Sourc e to Drain Diode
TJ = 25 oC
TJ = -55 oC
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com
FDMC8200 Rev.A1
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