Fairchild FDMC8030 service manual

FDMC8030

D1

D2

S1

G1

S2

G2

Power 33

Pin 1

S1S1

S2S2

G2

S2

G1

S1

S2

S2

S1

S1

4

3

2

18

7

6
5

Bottom Drain1 Contact

Bottom D r a in2 Conta ct

Q2

Q1

Dual N-Channel Power Trench® MOSFET

40 V, 12 A, 10 mΩ

Features

 Max r
 Max r
 Max r
 Termination is Lead-free and RoHS Compliant

= 10 mΩ at VGS = 10 V, ID = 12 A

DS(on)

= 14 mΩ at VGS = 4.5 V, ID = 10 A

DS(on)

= 28 mΩ at VGS = 3.2 V, ID = 4 A

DS(on)

General Description

This device includes two 40V N-Channel MOSFETs in a dual
Power 33 (3 mm X 3 mm MLP) package. The package is
enhanced for exceptional thermal performance.

Applications

 Battery Protection
 Load Switching
 Point of Load

FDMC8030 Dual N-Channel Power Trench

August 2011

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJA

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8030 FDMC8030 Power 33 13 ’’ 12 mm 3000 units

©2011 Fairchild Semiconductor Corporation
FDMC8030 Rev.C

Drain to Source Voltage 40 V
Gate to Source Voltage (Note 4) ±12 V
Drain Current -Continuous TA = 25 °C (Note 1a) 12

-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 21 mJ
Power Dissipation TA = 25 °C (Note 1a) 1.9
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Ambient (Note 1a) 65
Thermal Resistance, Junction to Ambient (Note 1b) 155

= 25 °C unless otherwise noted

A

= 25 °C (Note 1b) 0.8

A

1

A

W

°C/W

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Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 40 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 32 V, V
Gate to Source Leakage Current, Forward VGS = 12 V, V

I

= 250 μA, referenced to 25 °C 19 mV/°C

D

= 0 V 1 μA

GS

= 0 V 100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.5 2.8 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -5 mV/°C

D

= 10 V, ID = 12 A 8 10

V

GS

V

= 4.5 V, ID = 10 A 10 14

GS

= 3.2 V, ID = 4 A 19 28

V

GS

= 10 V, ID = 12 A

V

GS

T

= 125 °C

J

13 16

Forward Transconductance VDD = 5 V, ID = 12 A 57 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 321 430 pF
Reverse Transfer Capacitance 20 30 pF

= 20 V, VGS = 0 V

V

DS

f = 1MHz

Gate Resistance 0.9 2.5 Ω

1462 1975 pF

FDMC8030 Dual N-Channel Power Trench

mΩ

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q

Q

g(TOT)

gs
gd

Turn-On Delay Time
Rise Time 310ns
Turn-Off Delay Time 19 33 ns
Fall Time 310ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Gate to Source Charge 2.8 nC
Gate to Drain “Miller” Charge 2.5 nC

= 20 V, ID = 12 A

V

DD

V

= 10 V, R

GS

= 0 V to 5 V 12 17 nC

GS

GEN

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 9 18 nC

a. 65 °C/W when mounted on

2

pad of 2 oz copper

a 1 in

= 0 V, IS = 12 A (Note 2) 0.83 1.2 V

GS

= 12 A, di/dt = 100 A/μs

I

F

= 6 Ω

V

DD

I

= 12 A

D

= 20 V

713ns

21 30 nC

25 40 ns

is guaranteed by design while R

θJC

b.155 °C/W when mounted on
a minimum pad of 2 oz copper

is determined by

θCA

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. E

of 21 mJ is based on starting TJ = 25 oC, L = 0.3 mH, IAS = 12 A, VDD = 36 V, VGS = 10 V. 100% tested at L = 3 mH, IAS = 5 A.

AS

4. As an N-ch device, the negative V

©2011 Fairchild Semiconductor Corporation
FDMC8030 Rev.C

rating is for low duty cycle pulse occurence only. No continuous rating is implied.

gs

2

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FDMC8030 Dual N-Channel Power Trench

012345

0

10

20

30

40

50

VGS = 3 V

VGS = 10 V

VGS = 3.5 V

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

VGS = 4.5 V

VGS = 3.2 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTA GE (V)

0 1020304050

0

1

2

3

4

5

V

GS

= 10 V

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT(A)

V

GS

= 3.5 V

VGS =3.2 V

VGS = 3 V

V

GS

= 4.5 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 12 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESIST ANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

5

10

15

20

25

30

ID = 12 A

TJ = 25 oC

TJ = 125 oC

V

GS

, GATE TO SOURCE V OLTAGE (V )

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

1234

0

10

20

30

40

50

TJ = 25 oC

TJ = -55 oC

V

DS

= 5 V

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

TJ = 150 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

50

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

Nor mal ize d On -Re sis tan ce

vs Drain Current and Gate Voltage

®

MOSFET

Figur e 3. Norma liz ed On- Res is tan ce

vs Junction Temperature

©2011 Fairchild Semiconductor Corporation
FDMC8030 Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-Resist ance vs Gate to

Source Voltage

Figure 6.

Source to Drain Dio de

Forward Voltage vs Source Current

3

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