Fairchild FDMC8015L service manual

FDMC8015L

N-Channel Power Trench® MOSFET

40 V, 18 A, 26 mΩ

Features

 Max r
 Max r
 Low Profile - 1 mm max in Power 33
 100% UIL Tested

 RoHS Compliant

= 26 mΩ at VGS = 10 V, ID = 7 A

DS(on)

= 36 mΩ at VGS = 4.5 V, ID = 6 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor
been

especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

's advanced Power Trench

Applications

 Load Switch
 Motor Bridge Switch

April 2011

®

process that has

FDMC8015L N-Channel PowerTrench

®

MOSFET

G

Bottom

D

S

S

D

D

D

D

5

D

6

D

7

8

D

4

3

2
1

S

Top

6

8

1

2

3

5

7

4

MLP 3.3x3.3

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 18

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 30
Single Pulse Avalanche Energy (Note 3) 32 mJ
Power Dissipation TC = 25°C 24
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to + 150 °C

= 25 °C unless otherwise noted

A

= 25°C 22

C

= 25°C (Note 1a) 7

A

= 25°C (Note 1a) 2.3

A

Thermal Characteristics

TM

G

S

S

S

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 5.1
Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8015L FDMC8015L Power 33 13’’ 12

©2011 Fairchild Semiconductor Corporation
FDMC8015L Rev.C

°C/W

mm 3000 units

1

www.fairchildsemi.com

FDMC8015L N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 40 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 32 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 36 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA11.83V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -6 mV/°C

D

V

= 10 V, ID = 7 A 19.7 26

GS

= 4.5 V, ID = 6 A 24 36

GS

= 10 V, ID = 7 A, TJ = 125 °C 29 39

V

GS

Forward Transconductance VDD = 5 V, ID = 7 A 30 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 94 125 pF
Reverse Transfer Capacitance 58 90 pF
Gate Resistance 1.2 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g(TOT)
g(TOT)
gs
gd

Turn-On Delay Time
Rise Time 1.9 10 ns
Turn-Off Delay Time 18 33 ns
Fall Time 1.7 10 ns
Total Gate Charge V
Total Gate Charge V
Total Gate Charge 1.9 nC
Gate to Drain “Miller” Charge 2.5 nC

= 20 V, VGS = 0 V,

V

DS

f = 1 MHz

= 20 V, ID = 7 A,

V

DD

V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 4.5 V 6.6 10 nC

GS

= 6 Ω

GEN

VDD = 20 V,
I

D

= 7 A

710 945 pF

6.3 13 ns

13.6 19 nC

mΩV

®

MOSFET

TM

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1 .5 x 1.5 in . boa rd o f FR- 4 m ateria l. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 8 A, VDD = 36 V, VGS = 10 V.

©2011 Fairchild Semiconductor Corporation
FDMC8015L Rev. C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 8.6 18 nC

a.

V

= 0 V, IS = 7 A (Note 2) 0.84 1.2

GS

= 0 V, IS = 2 A (Note 2) 0.76 1.1

V

GS

= 7 A, di/dt = 100 A/μs

I

F

53 °C/W when mounted on a

2

pad of 2 oz copper

1 in

V

18 33 ns

is guaranteed by design while R

θJC

b.

125 °C/W when mounted on
a minimum pad of 2 oz copper

2

is determined by

θCA

www.fairchildsemi.com

FDMC8015L N-Channel PowerTrench

0 0.5 1.0 1.5 2.0 2.5

0

5

10

15

20

25

30

VGS = 4.5 V

VGS = 4 V

VGS = 3.5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 3 V

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 5 10 15 20 25 30

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 4 V

VGS = 3.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 3 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

ID = 7 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

20

40

60

80

TJ = 125 oC

ID = 7 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOL TAG E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

1 1.5 2.0 2.5 3.0 3.5 4.0

0

5

10

15

20

25

30

TJ = 150 oC

V

DS

= 5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Normali z e d O n - R esistance

vs Drain Current and Gate Voltage

®

MOSFET

TM

Fig u re 3. Norma l ized O n Res i stan c e

vs Junction Temperature

©2011 Fairchild Semiconductor Corporation
FDMC8015L Rev. C

Figure 5. Transfer Characteristics

Figure 4.

On-R esistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Di ode

Forward Voltage vs Source Current

3

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