Fairchild FDMC7696 service manual
FDMC7696
G
S
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S
D
D
D
D
5
6
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8
3
2
1
4
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4
5
D
D
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Bottom
Top
MLP 3.3x3.3
6
7
8
Pin 1
N-Channel PowerTrench® MOSFET
30 V, 12 A, 11.5 mΩ
Features
Max r
Max r
High performance technology for extremely low r
Termination is Lead-free and RoHS Compliant
= 11.5 mΩ at VGS = 10 V, ID = 12 A
DS(on)
= 14.5 mΩ at VGS = 4.5 V, ID = 10 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance.This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
November 2011
®
process that has
FDMC7696 N-Channel PowerTrench
Applications
DC/DC Buck Converters
Notebook battery power management
Load Switch in Notebook
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 20
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 21 mJ
Power Dissipation TC = 25°C 25
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25°C 38
C
= 25°C (Note 1a) 12
A
= 25°C (Note 1a) 2.4
A
®
MOSFET
A
W
R
θJC
R
θJA
Package Marking and Ordering Information
©2011 Fairchild Semiconductor Corporation
FDMC7696 Rev.C8
Device Marking Device Package Reel Size Tape Width Quantity
FDMC7696 FDMC7696 MLP 3.3x3.3 13 ’’ 12
Thermal Resistance, Junction to Case 5.0
Thermal Resistance, Junction to Ambient (Note 1a) 53
°C/W
mm 3000 units
www.fairchildsemi.com
1
FDMC7696 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage I
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current, Forward V
= 250 μA, VGS = 0 V30 V
D
I
= 250 μA, referenced to 25 °C 14 mV/°C
D
= 24 V, V
DS
= 20 V, V
GS
= 0 V1μA
GS
= 0 V 100nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, I
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance V
I
= 250 μA, referenced to 25 °C -6 mV/°C
D
= 10 V, ID = 12 A 8.5 11.5
V
GS
V
= 4.5 V, ID = 10 A 11.5 14.5
GS
= 10 V, ID = 12 A,
V
GS
T
= 125 °C
J
= 5 V, ID = 12 A45S
DS
= 250 μA 1.2 2.0 3.0 V
D
11.6 15.7
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 380 505 pF
Reverse Transfer Capacitance 40 55 pF
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.2 1.0 2.0 Ω
1075 1430 pF
mΩ
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 210ns
Turn-Off Delay Time 19 33 ns
Fall Time 210ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 3.2 nC
Gate to Drain “Miller” Charge 1.8 nC
= 15 V, ID = 12 A,
V
DD
V
= 10 V, R
GS
= 0 V to 10 V
GS
= 0 V to 5 V811nC
GS
GEN
Drain-Source Diode Characteristics
V
= 0 V, IS = 1.9 A (Note 2) 0.75 1.2
V
SD
t
rr
Q
rr
Notes:
is determined with the devi ce m ount ed on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
1. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 9 18 nC
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper.
GS
= 0 V, IS = 12 A (Note 2) 0.84 1.2
V
GS
= 12 A, di/dt = 100 A/μs
I
F
= 6 Ω
V
DD
I
= 12 A
D
= 15 V,
θJC
918ns
16 22 nC
25 40 ns
is guaranteed by design while R
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
θCA
V
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E
of 21 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V.
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
©2011 Fairchild Semiconductor Corporation
FDMC7696 Rev.C8
2
www.fairchildsemi.com
FDMC7696 N-Channel PowerTrench
0.00.51.01.52.02.5
0
10
20
30
40
50
VGS = 4.0 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 6 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 1020304050
0
1
2
3
4
5
6
VGS = 4.0 V
VGS = 6 V
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
VGS = 4.5 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = 12 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANC E
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
5
10
15
20
25
30
35
40
TJ = 125 oC
ID = 12 A
TJ = 25 oC
V
GS
, GATE TO S OURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
12345
0
10
20
30
40
50
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
®
MOSFET
Norma lized On-Re sista nce
vs Drain Current and Gate Voltage
Fi gu re 3. No rm al iz ed On Re si st an ce
vs Junction Temperature
©2011 Fairchild Semiconductor Corporation
FDMC7696 Rev.C8
Figure 5. Transfer Characteristics
Figure 4.
On-Resi stance vs Gat e to
Source Voltage
Figure 6.
Source to D rain Diode
Forward Voltage vs Source Current
3
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