Fairchild FDMC7692 service manual

FDMC7692

N-Channel Power Trench®MOSFET

30 V, 13.3 A, 8.5 m:

Features

 Max r

 Max r

 High performance technology for extremely low r

 Termination is Lead-free and RoHS Compliant

= 8.5 m: at VGS = 10 V, ID = 13.3 A

DS(on)

= 11.5 m: at VGS = 4.5 V, ID = 10.6 A

DS(on)

DS(on)

September 2011



General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.

Application

 DC - DC Buck Converters

 Notebook battery power management

 Load switch in Notebook

®

process that has

FDMC7692 N-Channel Power Trench

®

MOSFET

Top

Pin 1

S

Bottom

G

S

S

D

D

D

D

5

D

D

6

D

7

8

D

MLP 3.3x3.3

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25 °C 16

-Pulsed 40

Single Pulse Avalanche Energy (Note 3) 58 mJ

Power Dissipation TC = 25 °C 29

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C (Note 1a) 13.3

A

= 25 °C (Note 1a) 2.3

A

Thermal Characteristics

G

4

S

3

S

2

S

1

A -Continuous T

W

R

TJC

R

TJA

Thermal Resistance, Junction to Case 4.3

Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC7692 FDMC7692 MLP 3.3x3.3 13 ’’ 12 mm 3000 units

©2011 Fairchild Semiconductor Corporation
FDMC7692 Rev.C1

°C/W

1

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FDMC7692 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV
'T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 30 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current

= 250 PA, referenced to 25 °C 16 mV/°C

I

D

V

= 24 V, VGS= 0 V 1

DS

= 125 °C 250

T

J

Gate to Source Leakage Current VGS = 20 V, VDS= 0 V 100 nA

On Characteristics

V

GS(th)

'V
'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 1.2 1.9 3.0 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 PA, referenced to 25 °C -6 mV/°C

D

V

= 10 V, ID = 13.3 A 7.2 8.5

GS

= 4.5 V, ID = 10.6 A 9.5 11.5

GS

= 10 V, ID = 13.3 A, TJ = 125 °C 9.5 12.0

V

GS

Forward Transconductance VDD = 5 V, ID = 13.3 A 60 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 480 635 pF

Reverse Transfer Capacitance 65 100 pF

= 15 V, VGS = 0 V,

V

DS

f = 1 MHz

1260 1680 pF

Gate Resistance 0.9 2.4 :

m:V

PA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 410ns

Turn-Off Delay Time 21 33 ns

= 15 V, ID = 13.3 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 :

Fall Time 310ns

Total Gate Charge VGS = 0 V to 10 V

Total Gate Charge V

= 0 V to 4.5 V 10 14 nC

GS

Total Gate Charge 5nC

Gate to Drain “Miller” Charge 3 nC

Drain-Source Diode Characteristics

V

= 0 V, IS= 13.3 A (Note 2) 0.86 1.2

V

SD

t

rr

Q

rr

NOTES:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

TJA

the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 7 14 nC

a. 53 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

GS

= 0 V, IS= 1.9 A (Note 2) 0.75 1.2

V

GS

= 13.3 A, di/dt = 100 A/Ps

I

F

= 15 V

V

DD

I

= 13.3 A

D

918ns

21 29 nC

24 38 ns

is guaranteed by design while R

TJC

b.125 °C/W when mounted on
a minimum pad of 2 oz copper

is determined by

TCA

V

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.

3. E

of 58 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 10.8 A, VDD = 27 V, VGS = 10 V.

AS

©2011 Fairchild Semiconductor Corporation
FDMC7692 Rev.C1

100% test at L = 0.1 mH, IAS = 21 A.

2

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FDMC7692 N-Channel Power Trench

Typical Characteristics T

40

VGS = 10 V

30

VGS = 6 V

VGS = 4.5 V

VGS = 4 V

20

10

, DRAIN CURRENT (A)

D

I

0

01234

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

Figure 1.

1.6

ID = 13.3 A
V

1.4

On-Region Characteristics Figure 2.

= 10 V

GS

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (

J

PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX

= 25 °C unless otherwise noted

J

VGS = 3.5 V

VGS = 3 V

o

C)

4.0

3.5

VGS = 3.5 V

PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX

3.0

2.5

2.0

VGS = 4 V

NORMALIZED

1.5

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5
0 10203040

I

, DRAIN CURRENT (A)

D

VGS = 6 V

VGS = 4.5 V

VGS = 10 V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

40

ID= 13.3 A

(m:)

30

20

DRAIN TO

,

DS(on)

r

10

SOURCE ON-RESISTANCE

0

246810

V

, GATE TO SOURCE VOLTAGE (V)

GS

PULSE DURATION = 80 P s
DUTY CYCLE = 0.5% MAX

TJ= 125 oC

TJ= 25 oC

®

MOSFET

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

40

PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX

30

VDS= 5 V

20

10

, DRAIN CURRENT (A)

D

I

0

12345

TJ = 150 oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

©2011 Fairchild Semiconductor Corporation
FDMC7692 Rev.C1

TJ = 25 oC

TJ = -55 oC

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

60

VGS= 0 V

10

1

TJ= 150 oC

TJ = 25 oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55 oC

Forward Voltage vs Source Current

3

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