Fairchild FDMC7680 service manual

FDMC7680

Bottom

D

D

D

D

S

S

S

G

Top

Pin 1

MLP 3.3x3.3

G

S

S

S

D
D

D

D

5
6

7

8

3

2

1

4

N-Channel Power Trench® MOSFET

30 V, 14.8 A, 7.2 mΩ

Features

 Max r
 Max r
 High performance technology for extremely low r
 Termination is Lead-free and RoHS Compliant

= 7.2 mΩ at VGS = 10 V, ID = 14.8 A

DS(on)

= 9.5 mΩ at VGS = 4.5 V, ID = 12.4 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power
been especially tailored to minimize the on-state resistance.
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.

Application

 DC - DC Buck Converters
 Notebook battery power management
 Load switch in Notebook

FDMC7680 N-Channel Power Trench

November 2011

Trench® process that has

This

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC7680 FDMC7680 MLP 3.3x3.3 13 ’’ 12 mm 3000 units

©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C3

Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 18

-Pulsed 45
Single Pulse Avalanche Energy (Note 3) 72 mJ
Power Dissipation TC = 25 °C 31
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 4.0
Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

A

= 25 °C (Note 1a) 14.8

A

= 25 °C (Note 1a) 2.3

A

1

A -Continuous T

W

°C/W

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Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = 20 V, V

I

= 250 μA, referenced to 25 °C 15 mV/°C

D

V

= 24 V, V

DS

= 0 V 1

GS

DS

= 125 °C 250

T

J

= 0 V 100 nA

FDMC7680 N-Channel Power Trench

μA

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.2 2.0 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 5 V, ID = 14.8 A 68 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 770 1020 pF
Reverse Transfer Capacitance 75 115 pF
Gate Resistance 0.5 1.6 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 4 10 ns
Turn-Off Delay Time 25 40 ns
Fall Time 3 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 7 nC
Gate to Drain “Miller” Charge 4 nC

= 250 μA, referenced to 25 °C -6 mV/°C

I

D

V

= 10 V, ID = 14.8 A 5.8 7.2

GS

= 4.5 V, ID = 12.4 A 7.3 9.5

V

GS

= 10 V, ID = 14.8 A

V

GS

= 125 °C

T

J

= 15 V, VGS = 0 V,

V

DS

7.4 9.2

2145 2855 pF

f = 1 MHz

12 22 ns

= 15 V, ID = 14.8 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

30 42 nC

= 0 V to 4.5 V 14 19 nC

GS

= 15 V

V

DD

I

= 14.8 A

D

mΩ

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:
1: R

θJA

the user's board design.

2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3: E

AS

©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C3

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 15 24 nC

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

of 72 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V.

a. 53 °C/W when mounted on

2

pad of 2 oz copper

a 1 in

V

= 0 V, IS = 14.8 A (Note 2) 0.84 1.2

GS

= 0 V, IS = 1.9 A (Note 2) 0.73 1.2

V

GS

IF = 14.8 A, di/dt = 100 A/μs

2

θJC

b.125 °C/W when mounted on
a minimum pad of 2 oz copper

34 54 ns

is guaranteed by design while R

V

is determined by

θCA

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FDMC7680 N-Channel Power Trench

0.0 0.5 1.0 1.5 2.0

0

9

18

27

36

45

VGS = 3.5 V

VGS = 6 V

VGS = 10 V

VGS = 3 V

VGS = 4 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 4.5 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 9 18 27 36 45

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS = 4.5 V

VGS = 6 V

VGS = 4 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 10 V

VGS = 3.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 14.8 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESIST A NC E

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

5

10

15

20

25

TJ = 125 oC

ID = 14.8 A

TJ = 25 oC

V

GS

, GATE TO S OURCE VOLTAG E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

12345

0

9

18

27

36

45

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

®

MOSFET

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C3

Figure 5. Transfer Characteristics

Figure 4.

On-Resis tance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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