Fairchild FDMC7678 service manual
FDMC7678
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
1
2
3
4
5
DD
D
D
G
S
S
S
Bottom
Top
MLP 3.3x3.3
6
7
8
Pin 1
N-Channel Power Trench® MOSFET
30 V, 19.5 A, 5.3 mΩ
Features
Max r
Max r
High performance technology for extremely low r
Termination is Lead-free and RoHS Compliant
= 5.3 mΩ at VGS = 10 V, ID = 17.5 A
DS(on)
= 6.8 mΩ at VGS = 4.5 V, ID = 15.0 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power
been especially tailored to minimize the on-state resistance.
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
FDMC7678 N-Channel Power Trench
June 2011
Trench® process that has
This
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
R
θJA
©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev. C1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMC7678 FDMC7678 MLP 3.3x3.3 13 ’’ 12 mm 3000 units
= 25 °C unless otherwise noted
A
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 3) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 19.5
Drain Current -Continuous (Silicon limited) T
-Continuous T
-Pulsed 70
Single Pulse Avalanche Energy (Note 4) 54 mJ
Power Dissipation TC = 25 °C 31
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case 4.0
Thermal Resistance, Junction to Ambient (Note 1a) 53
= 25 °C 63
C
= 25 °C (Note 1a) 17.5
A
= 25 °C (Note 1a) 2.3
A
1
W
°C/W
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A
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
I
= 250 μA, referenced to 25 °C 21 mV/°C
D
= 0 V 1 μA
GS
= 0 V 100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.2 1.5 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -5 mV/°C
D
= 10 V, ID = 17.5 A 4.2 5.3
V
GS
V
= 4.5 V, ID = 15.0 A 5.1 6.8
GS
= 10 V, ID = 17.5 A
V
GS
T
= 125 °C
J
5.7 7.2
Forward Transconductance VDD = 5 V, ID = 17.5 A 90 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 620 820 pF
Reverse Transfer Capacitance 75 110 pF
= 15 V, VGS = 0 V
V
DS
f = 1MHz
Gate Resistance 0.7 2.5 Ω
1810 2410 pF
FDMC7678 N-Channel Power Trench
mΩ
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g(TOT)
gs
gd
Turn-On Delay Time
Rise Time 410ns
Turn-Off Delay Time 26 41 ns
Fall Time 310ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Gate to Source Charge 4.4 nC
Gate to Drain “Miller” Charge 3.9 nC
= 15 V, ID = 17.5 A
V
DD
V
= 10 V, R
GS
= 0 V to 4.5 V 14 19 nC
GS
GEN
= 6 Ω
Drain-Source Diode Characteristics
V
= 0 V, IS = 1.9 A (Note 2) 0.7 1.2
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mo unt ed on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 13 23 nC
a. 53 °C/W when mounted on
a 1 in2 pad o f 2 oz co p p er
GS
= 0 V, IS = 17.5 A (Note 2) 0.8 1.2
V
GS
= 17.5 A, di/dt = 100 A/μs
I
F
= 15 V
V
DD
I
= 17.5 A
D
10 19 ns
28 39 nC
30 49 ns
is guaranteed by design while R
θJC
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
is determined by
θCA
V
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. As an N-ch device, the negative V
4. E
of 54 mJ is based on starting TJ = 25 oC, L = 0.3 mH, IAS = 19 A, VDD = 27 V, VGS = 10 V.
AS
©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev. C1
rating is for low duty cycle pulse occurence only. No continuous rating is implied.
GS
2
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FDMC7678 N-Channel Power Trench
0.0 0.5 1.0 1.5 2.0
0
10
20
30
40
50
60
70
VGS = 3 V
VGS = 3.5 V
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 6 V
VGS = 10 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 10203040506070
0
1
2
3
4
VGS = 3 V
VGS = 6 V
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
VGS = 3.5 V
VGS = 4.5 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
ID = 17.5 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
2
4
6
8
10
12
TJ = 125 oC
ID = 17.5 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTA G E (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.0 1.5 2.0 2.5 3.0 3.5
0
10
20
30
40
50
60
70
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE T O SOURC E VOLTA GE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics
= 25°C unless otherwise noted
J
Figure 2.
Norma l i z e d On-Res i s t a nce
vs Drain Current and Gate Voltage
®
MOSFET
Fi g u r e 3. Normali z e d O n Resist a n c e
vs Junction Temperature
©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev. C1
Figure 5. Transfer Characteristics
Figure 4.
On-R esistan ce vs Gate to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
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