Fairchild FDMC7672S service manual
FDMC7672S
N-Channel Power Trench® SyncFETTM
30 V, 14.8 A, 6.0 m:
Features
Max r
Max r
High performance technology for extremely low r
Termination is Lead-free and RoHS Compliant
= 6.0 m: at VGS = 10 V, ID = 14.8 A
DS(on)
= 7.1 m: at VGS = 4.5 V, ID = 12.4 A
DS(on)
DS(on)
General Description
This FDMC7672S is produced using Fairchild Semiconductor’s
advanced Power Trench
tailored to minimize the on-state resistance. This device is well
suited for Power Management and load switching applications
common in Notebook Computers and Portable Battery packs.
Applications
September 2010
®
process that has been especially
FDMC7672S N-Channel Power Trench
DC - DC Buck Converters
Notebook battery power mangement
Load switch in Notebook
Top
Pin 1
S
Bottom
D
G
S
S
D
D
D
D
5
D
6
D
7
8
D
MLP 3.3x3.3
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC= 25 °C 18
-Pulsed 45
Single Pulse Avalanche Energy (Note 3) 60 mJ
Power Dissipation TC = 25 °C 36
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C (Note 1a) 14.8
A
= 25 °C (Note 1a) 2.3
A
Thermal Characteristics
®
SyncFET
TM
G
4
S
3
S
2
S
1
A -Continuous T
W
R
TJC
R
TJA
Thermal Resistance, Junction to Case 3.5 °C/W
Thermal Resistance, Junction to Ambient (Note 1a) 53 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMC7672S FDMC7672S MLP 3.3X3.3 13 ’’ 12 mm 3000 units
©2010 Fairchild Semiconductor Corporation
FDMC7672S Rev.C3
1
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Electrical Characteristics T
Symbol Parameter Test Conditions Min Typ Max Units
= 25 °C unless otherwise noted
J
Off Characteristics
BV
'BV
'T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current VGS = 20 V, V
I
= 10 mA, referenced to 25 °C 12 mV/°C
D
= 0 V 1 mA
GS
= 0 V 100 nA
DS
FDMC7672S N-Channel Power Trench
On Characteristics
V
GS(th)
'V
'T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.6 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = 5 V, ID = 14.8 A 78 S
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 770 1025 pF
Reverse Transfer Capacitance 85 130 pF
Gate Resistance 1.2 3.2 :
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 410ns
Turn-Off Delay Time 26 42 ns
Fall Time 310ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 14 20 nC
Gate to Source Gate Charge 5.3 nC
Gate to Drain “Miller” Charge 4.0 nC
= 10 mA, referenced to 25 °C -6 mV/°C
I
D
V
= 10 V, ID = 14.8 A 5.0 6.0
GS
= 4.5 V, ID = 12.4 A 6.1 7.1
V
GS
= 10 V, ID = 14.8 A
V
GS
= 125 °C
T
J
= 15 V, VGS = 0 V,
V
DS
5.9 9.0
1895 2520 pF
f = 1 MHz
11 21 n s
= 15 V, ID = 14.8 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 :
30 42 nC
= 15 V
V
DD
I
= 14.8 A
D
m:
®
SyncFET
TM
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1. R
TJA
the user's board design.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
of 60 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 11 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 4.8 A.
3. E
AS
©2010 Fairchild Semiconductor Corporation
FDMC7672S Rev.C3
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 28 44 nC
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
V
= 0 V, IS= 14.8 A (Note 2) 0.8 1.3
GS
= 0 V, IS= 1.9 A (Note 2) 0.5 1.2
V
GS
= 14.8 A, di/dt = 300 A/Ps
I
F
a. 53 °C/W when mounted on a
1 in2pad of 2 oz copper.
V
29 45 ns
is guaranteed by design while R
TJC
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2
is determined by
TCA
www.fairchildsemi.com
FDMC7672S N-Channel Power Trench
Typical Characteristics T
45
VGS = 10 V
36
27
18
DRAIN CURRENT (A)
,
9
D
I
0
0 0.2 0.4 0.6 0.8
V
DRAIN TO SOURCE VOLTAGE (V)
,
DS
Figure 1.
1.6
1.4
On-Region Characteristics
ID = 14.8 A
V
= 10 V
GS
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
T
JUNCTION TEMPERATURE
,
J
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
VGS = 6 V
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
= 25 °C unless otherwise noted
J
VGS = 3 V
o
(
C
)
4.0
VGS = 3 V
3.5
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
3.0
2.5
VGS = 6 V
VGS = 3.5 V
V
=4 V
GS
V
GS
=10 V
2.0
NORMALIZED
1.5
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 9 18 27 36 45
Figure 2.
VGS = 4.5 V
,
DRAIN CURRENT (A)
I
D
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
15
)
:
m
(
12
9
DRAIN TO
,
DS(on)
r
6
SOURCE ON-RESISTANCE
3
246810
Figure 4.
ID= 14.8 A
V
GATE TO SOURCE VOLTAGE (V)
,
GS
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
TJ= 125 oC
TJ= 25 oC
Source Voltage
®
SyncFET
TM
45
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
36
VDS= 5 V
27
TJ = 125 oC
18
, DRAIN CURRENT (A)
D
I
9
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2010 Fairchild Semiconductor Corporation
FDMC7672S Rev.C3
TJ = 25 oC
TJ = -55 oC
100
VGS= 0 V
10
TJ= 125 oC
1
TJ = 25 oC
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
TJ = -55 oC
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
3
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