Fairchild FDMC7664 service manual

FDMC7664

N-Channel PowerTrench® MOSFET

30 V, 18.8 A, 4.2 m: Features

 Max r

 High perfo

 T

ermination is Lead-free and RoHS Compliant

= 4.

DS(o

DS(on)

2 m: at V

n)

5 m: at V

= 5.

rmance technology for extremely low r

= 10 V

GS

= 4.5 V

GS

, I

= 18.8 A

D

= 16.1 A

D

DS(o

n)

Ju

ne 2010

neral Description

Ge

This

N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

®

proce

ss that has

FDMC7664 N-Channel PowerTrench

Top

Pin 1

MLP 3.3x3.3

MOSFET Maximum Ratings T

Symbol

V

DS

V

GS

I

D

E

AS

P

D

T

, T

J

STG

Thermal Characteristics

rain to Source Voltage 30 V

D

Gate to Sou

D

rain Current -Continuous (Package limited) T

-Pulsed 60

S

ingle Pulse Avalanche Energy (Note 3) 188 mJ

Pow

Power Dissipation T

Oper

rce Voltage ±20 V

er Dissipation T

ating and Storage Junction Temperature Range -55 to +150 °C

Applications

 DC - DC Buck Converters

 Notebook battery power management

 Load switch in Notebook

Bottom

5

D

G

S

D

= 25 °C u

A

nless otherwise noted

Parameter Ratings Units

= 25

°C 24

C

°C (Note 1a) 18.8

= 25

A

= 25 °C

C

25 °C (Note 1a) 2.3

=

A

D

6

D

7

8

D

42

®

MOSFET

G

4

S

3

S

2

S

1

A -Continuous T

W

R

TJC

R

TJA

Packag

e Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC7664 FDMC7664 MLP 3.3x3.3 13 ’’ 12 mm 3000 units

hermal Resistance, Junction to Case 3.0

T

Thermal Resistance, Junction to Ambient (Note 1a) 53

°C/W

1

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FDMC7664 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV 'T

I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 30 V

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

I

= 250 PA, referenced to 25 °C 12 mV/°C

D

V

= 24 V, VGS= 0 V 1

DS

= 125 °C 250

T

J

Gate to Source Leakage Current, Forward VGS = 20 V, VDS= 0 V 100 nA

On Characteristics

V

GS(th)

'V 'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 1.0 1.9 3.0 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

= 250 PA, referenced to 25 °C -7 mV/°C

I

D

V

= 10 V, ID = 18.8 A 3.6 4.2

GS

= 4.5 V, ID = 16.1 A 4.5 5.5

V

GS

= 10 V, ID = 18.8 A

V

GS

T

J

= 125 °C

4.4 5.4

Forward Transconductance VDD = 5 V, ID = 18.8 A 115 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 1100 1465 pF

Reverse Transfer Capacitance 115 170 pF

= 15 V, VGS = 0 V

V

DS

f = 1 MHz

3655 4865 pF

Gate Resistance 0.8 2.2 :

PA

m:

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 714ns

Turn-Off Delay Time 37 59 ns

= 15 V, ID = 18.8 A

V

DD

V

= 10 V, R

GS

GEN

Fall Time 612ns

Total Gate Charge VGS = 0 V to 10 V

Total Gate Charge VGS = 0 V to 4.5 V 25 34 nC

Gate to Source Charge 12 nC

Gate to Drain “Miller” Charge 6 nC

Drain-Source Diode Characteristics

V

= 0 V, IS= 18.8 A (Note 2) 0.83 1.2

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 20 35 nC

a. 53 °C/W when mounted on a 1 i n2p ad o f 2 o z co p p er

GS

= 0 V, IS= 1.9 A (Note 2) 0.71 1.2

V

GS

= 18.8 A, di/dt = 100 A/Ps

I

F

= 6 :

V

DD

= 18.8 A

I

D

= 15 V

15 27 ns

55 76 nC

41 65 ns

is guaranteed by design while R

TJC

b.125 °C/W when mounted on a minimum pad of 2 oz copper

is determined by

TCA

V

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.

3. E

of 188 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 19.4 A, VDD = 27 V, VGS = 10 V.

AS

2

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FDMC7664 N-Channel PowerTrench

Typical Characteristics T

60

VGS = 10 V

45

30

15

, DRAIN CURRENT (A)

D

I

0

0.0 0.3 0.6 0.9 1.2

V

DS

Figure 1.

1.6

ID = 18.8 A V

= 10 V

GS

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

,

J

VGS = 6 V

VGS = 4.5 V

VGS = 4 V

VGS = 3.5 V

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

, DRAIN TO SOURCE VOLTAGE (V)

On Region Characteristics Figure 2.

JUNCTION TEMPERATURE (oC)

= 25 °C unless otherwise noted

J

VGS = 3 V

5

VGS = 3 V

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

4

3

VGS = 4.5 V

VGS = 3.5 V

2

V

NORMALIZED

GS

=4 V

1

DRAIN TO SOURCE ON-RESISTANCE

0

0 15304560

I

, DRAIN CURRENT (A)

D

VGS = 6 V

VGS=10 V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

12

(m:)

9

6

DRAIN TO

,

DS(on)

r

3

SOURCE ON-RESISTANCE

0

246810

V

, GATE TO SOURCE VOLTAGE (V)

GS

PULSE DURATION = 80 P s DUTY CYCLE = 0.5% MAX

ID= 18.8 A

TJ= 125 oC

TJ= 25 oC

®

MOSFET

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

vs Junction Temperature

60

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

45

VDS= 5 V

30

TJ = 150 oC

15

, DRAIN CURRENT (A)

D

I

0

1234

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

TJ = 25 oC

TJ = -55 oC

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

100

V

= 0 V

GS

10

1

TJ= 150 oC

TJ = 25 oC

0.1

TJ = -55 oC

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

Forward Voltage vs Source Current

3

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