Fairchild FDMC7660DC service manual

FDMC7660DC

Top

Power 33

Bottom

Pin 1

D D

5 6

N-Channel Dual Cool

30 V, 40 A, 2.2 mΩ Features

 Dual CoolTM Top Side Cooling PQFN package  Max r  Max r  High performance technology for extremely low r  SyncFET Schottky Body Diode

 RoHS Compliant

= 2.2 mΩ at VGS = 10 V, ID = 22 A

DS(on)

= 3.3 mΩ at VGS = 4.5 V, ID = 18 A

DS(on)

PowerTrench® MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench Advancements in both silicon and Dual Cool technologies have been combined to offer the lowest

DS(on)

while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Applications

 Synchronous Rectifier for DC/DC Converters  Telecom Secondary Side Rectification  High End Server/Workstation

January 2011

process.

package

DS(on)

FDMC7660DC N-Channel Dual Cool

PowerTrench

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

dv/dt Peak Diode Recovery dv/dt (Note 5) 1.0 V/ns P

, T

STG

Drain to Source Voltage 30 V Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 40

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200 Single Pulse Avalanche Energy (Note 3) 220 mJ

Power Dissipation TC = 25 °C 78 Power Dissipation T Operating and Storage Junction Temperature Range -55 to + 150 °C

= 25°C unless otherwise noted

= 25 °C 150

= 25 °C (Note 1a) 30

= 25 °C (Note 1a) 3.0

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

7660 FDMC7660DC Dual Cool

Power 33 13’’ 12 mm 3000 units

°C/W

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MOSFET

FDMC7660DC N-Channel Dual Cool

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage I Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current V Gate to Source Leakage Current, Forward V

= 250 μA, VGS = 0 V30 V

= 250 μA, referenced to 25 °C 15 mV/°C

= 24 V, V

= 20 V, V

= 0 V1μA

= 0 V 100nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, I Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance V

= 250 μA, referenced to 25 °C -7 mV/°C

= 10 V, ID = 22 A 1.62.2

= 4.5 V, ID = 18 A2.53.3

= 10 V, ID = 22 A, T

= 5 V, ID = 22 A 147 S

= 250 μA 1.2 2 2.5 V

= 125°C 2.2 3.3

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 1215 1620 pF Reverse Transfer Capacitance 100 150 pF Gate Resistance 0.7 1.5 Ω

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 6.6 13 ns Turn-Off Delay Time 36 58 ns Fall Time 510ns Total Gate Charge V Total Gate Charge V Gate to Source Charge 13 nC Gate to Drain “Miller” Charge 5.5 nC

= 15 V, VGS = 0 V,

f = 1MHz

= 15 V, ID = 22 A,

= 10 V, R

= 0 V to 10 V

= 0 V to 4.5 V2434nC

GEN

= 6 Ω

= 22 A

= 15 V,

3885 5170 pF

17 31 ns

54 76 nC

mΩV

PowerTrench

MOSFET

Drain-Source Diode Characteristics

Source-Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 24 38 nC

= 0 V, IS = 22 A (Note 2) 0.8 1.2

= 0 V, IS = 1.9 A (Note 2) 0.7 1.2

= 22 A, di/dt = 100 A/μs

43 69 ns

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Thermal Characteristics

FDMC7660DC N-Channel Dual Cool

θJC

θJA

NOTES:

1. R

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

θJA

by the user's board design.

Thermal Resistance, Junction to Case (Top Source) 4.3 Thermal Resistance, Junction to Case (Bottom Drain) 1.6 Thermal Resistance, Junction to Ambient (Note 1a) 42 Thermal Resistance, Junction to Ambient (Note 1b) 105 Thermal Resistance, Junction to Ambient (Note 1c) 29 Thermal Resistance, Junction to Ambient (Note 1d) 40 Thermal Resistance, Junction to Ambient (Note 1e) 19 Thermal Resistance, Junction to Ambient (Note 1f) 23 Thermal Resistance, Junction to Ambient (Note 1g) 30 Thermal Resistance, Junction to Ambient (Note 1h) 79 Thermal Resistance, Junction to Ambient (Note 1i) 17 Thermal Resistance, Junction to Ambient (Note 1j) 26 Thermal Resistance, Junction to Ambient (Note 1k) 12 Thermal Resistance, Junction to Ambient (Note 1l) 16

a. 42 °C/W when mounted on

a 1 in

pad of 2 oz copper

is guaranteed by design while R

θJC

b. 105 °C/W when mounted on a minimum pad of 2 oz copper

is determined

θCA

°C/W

PowerTrench

MOSFET

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. EAS of 220 mJ is based on starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 21 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 33.5 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

5. ISD ≤ 22 A, di/dt ≤ 100 A/μs, VDD ≤ BV

, Starting TJ = 25 oC.

DSS

pad of 2 oz copper

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Fairchild FDMC7660DC service manual

Specifications and Main Features

Frequently Asked Questions

User Manual