Fairchild FDMC7660 service manual
FDMC7660
S
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Top
Power 33
Bottom
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G
Pin 1
N-Channel PowerTrench® MOSFET
30 V, 20 A, 2.2 mΩ
Features
Max r
Max r
High performance technology for extremely low r
Termination is Lead-free and RoHS Compliant
= 2.2 mΩ at VGS = 10 V, ID = 20 A
DS(on)
= 3.3 mΩ at VGS = 4.5 V, ID = 18 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power
been especially tailored to minimize the on-state resistance.
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Applications
DC - DC Buck Converters
Point of Load
High Efficiency Load Switch and Low Side Switching
FDMC7660 N-Channel PowerTrench
June 2012
Trench® process that has
This
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 40
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 200
Single Pulse Avalanche Energy (Note 3) 200 mJ
Power Dissipation TC = 25°C 41
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to + 150 °C
C
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMC7660 FDMC7660 Power 33 13’’ 12
©2012 Fairchild Semiconductor Corporation
FDMC7660 Rev.C5
Thermal Resistance, Junction to Case 3
Thermal Resistance, Junction to Ambient (Note 1a) 53
= 25°C unless otherwise noted
= 25°C 100
C
= 25°C (Note 1a) 20
A
= 25°C (Note 1a) 2.3
A
1
mm 3000 units
www.fairchildsemi.com
A
W
°C/W
FDMC7660 N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage I
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current V
= 250 μA, VGS = 0 V30 V
D
I
= 250 μA, referenced to 25°C 14 mV/°C
D
= 24 V, V
DS
= 20 V, V
GS
= 0 V1μA
GS
= 0 V 100nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, I
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance V
I
= 250 μA, referenced to 25°C -6 mV/°C
D
V
= 10 V, ID = 20 A 1.82.2
GS
= 4.5 V, ID = 18 A2.63.3
GS
= 10 V, ID = 20 A, T
V
GS
= 5 V, ID = 20 A 163 S
DS
= 250 μA 1.2 1.7 2.5 V
D
= 125°C 2.2 3.1
J
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1345 1790 pF
Reverse Transfer Capacitance 110 165 pF
Gate Resistance 0.9 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 6.8 14 ns
Turn-Off Delay Time 36 58 ns
Fall Time 5.7 11 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 11 nC
Gate to Drain “Miller” Charge 5.6 nC
= 15 V, VGS = 0 V,
V
DS
f = 1MHz
= 15 V, ID = 20 A,
V
DD
V
= 10 V, R
GS
= 0 V to 10 V
GS
= 0 V to 4.5 V2438nC
GS
GEN
= 6 Ω
V
DD
I
= 20 A
D
= 15 V,
3630 4830 pF
14 25 ns
54 86 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
= 0 V, IS = 20 A (Note 2) 0.8 1.2
V
SD
t
rr
Q
rr
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
is guaranteed by design while R
R
θJC
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
4. As an N-channel device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
©2012 Fairchild Semiconductor Corporation
FDMC7660 Rev.C5
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 25 35 nC
is determined by the user’s board design.
θJA
a.
53 °C/W when mounted on a
SS
SF
DF
DS
G
= 25 °C, L = 1 mH, IAS = 20 A, VDD = 27 V, VGS = 10 V
J
2
1 in
pad of 2 oz copper
GS
= 0 V, IS = 1.9 A (Note 2) 0.7 1.2
V
GS
= 20 A, di/dt = 100 A/μs
I
F
G
2
DF
DS
SF
SS
45 63 ns
b.
125 °C/W when mounted on
a minimum pad of 2 oz copper
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V
FDMC7660 N-Channel PowerTrench
0.0 0.5 1.0 1.5 2 .0
0
50
100
150
200
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 4 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 50 100 150 200
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 4 V
VGS = 4.5 V
VGS = 3 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.8
1.0
1.2
1.4
1.6
ID = 20 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATUR E (
o
C)
246810
0
5
10
15
TJ = 125oC
ID = 20 A
TJ = 25 oC
V
GS
, GATE TO S OURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1234
0
50
100
150
200
TJ = 150 oC
V
DS
= 5 V
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURC E VO LTAGE (V)
0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
200
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25°C unless otherwise noted
J
®
MOSFET
No rm al iz ed On -R es is ta nc e
vs Drain Current and Gate Voltage
Fi gur e 3. No rma lized On R esist anc e
vs Junction Temperature
©2012 Fairchild Semiconductor Corporation
FDMC7660 Rev.C5
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gate to
Source Voltage
Figure 6.
Source to Drain Dio de
Forward Voltage vs Source Current
3
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