Fairchild FDMC7572S service manual
FDMC7572S
Top
Power 33
Bottom
D
D
D
D
S
S
S
G
Pin 1
4
3
2
1
5
6
7
8
S
S
S
G
D
D
D
D
N-Channel Power Trench® SyncFET
25 V, 40 A, 3.15 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
100% UIL Tested
RoHS Compliant
= 3.15 mΩ at VGS = 10 V, ID = 22.5 A
DS(on)
= 4.7 mΩ at VGS = 4.5 V, ID = 18 A
DS(on)
DS(on)
TM
General Description
The FDMC7572S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
while maintaining excellent switching performance. This
DS(on)
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
FDMC7572S N-Channel Power Trench
August 2011
®
SyncFET
TM
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 25 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 40
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 120
Single Pulse Avalanche Energy (Note 3) 84 mJ
Power Dissipation TC = 25 °C 52
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 103
C
= 25 °C (Note 1a) 22.5
A
= 25 °C (Note 1a) 2.3
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMC7572S FDMC7572S Power 33 13 ’’ 12 mm 3000 units
©2011 Fairchild Semiconductor Corporation
FDMC7572S Rev.C1
Thermal Resistance, Junction to Case 2.4
Thermal Resistance, Junction to Ambient (Note 1a) 53
1
°C/W
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FDMC7572S N-Channel Power Trench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
I
= 10 mA, referenced to 25 °C 21 mV/°C
D
= 0 V 500 μA
GS
= 0 V 100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.7 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 10 mA, referenced to 25 °C -5 mV/°C
D
V
= 10 V, ID = 22.5 A 2.5 3.15
GS
= 4.5 V, ID = 18 A 3.6 4.7
GS
= 10 V, ID = 22.5 A, TJ = 125 °C 3.5 4.5
V
GS
Forward Transconductance VDS = 5 V, ID = 22.5 A 122 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 596 795 pF
Reverse Transfer Capacitance 134 205 pF
= 13 V, VGS = 0 V,
V
DS
f = 1 MHz
2031 2705 pF
Gate Resistance 1.1 2.4 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 3.6 10 ns
Turn-Off Delay Time 26 41 ns
= 13 V, ID = 22.5 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 3 10 ns
g
g
gs
gd
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 14 20 nC
Gate to Source Gate Charge 6.5 nC
= 13 V
V
DD
= 22.5 A
I
D
Gate to Drain “Miller” Charge 3.9 nC
11 22 ns
31 44 nC
mΩV
®
SyncFET
TM
Drain-Source Diode Characteristics
V
= 0 V, IS = 22.5 A (Note 2) 0.79 1.2
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board o f FR-4 materi al. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 84 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 13 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 20 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMC7572S Rev.C1
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 19 34 nC
53 °C/W when mounted on a
1 in2 pad of 2 oz copper
GS
= 0 V, IS = 2 A (Note 2) 0.47 0.8
V
GS
= 22.5 A, di/dt = 300 A/μs
I
F
2
24 39 ns
is guaranteed by design while R
θJC
125 °C/W when mounted on
a minimum pad of 2 oz copper
V
is determined by
θCA
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FDMC7572S N-Channel Power Trench
012345
0
30
60
90
120
VGS = 3.5 V
VGS = 4.5 V
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 2.5 V
VGS = 3 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 306090120
0
1
2
3
4
5
6
7
8
VGS = 4.5 V
VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 3 V
VGS = 3.5 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
ID = 22.5 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTAN CE
T
J
, JUNCTION TEMPERATUR E (
o
C)
246810
0
2
4
6
8
10
12
TJ = 125 oC
ID = 22.5 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
30
60
90
120
TJ = 125 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
200
TJ = -55 oC
TJ = 25 oC
TJ = 125 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics
= 25 °C unless otherwise noted
J
Figure 2.
Nor ma liz ed O n-Res ist anc e
vs Drain Current and Gate Voltage
®
SyncFET
TM
Figur e 3 . Norm al ized O n- Res is tance
vs Junction Temperature
FDMC7572S Rev.C1
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gate to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
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