Fairchild FDMC6890NZ service manual

tm

FDMC6890NZ Dual N-Channel PowerTrench® MOSFET

20V, 4A, Q1:68mΩ, Q2:100mΩ

Features

Q1: N-Channel

 Max r

Q2: N-Channel

 Max r

 Low gate Charge

 RoHS Compliant

= 68mΩ at VGS = 4.5V, ID = 4A

DS(on)

= 100mΩ at VGS = 2.5V, ID = 3A

DS(on)

= 100mΩ at VGS = 4.5V, ID = 4A

DS(on)

= 150mΩ at VGS = 2.5V, ID = 2A

DS(on)

General Description

FDMC6890NZ is a compact single package solution for DC to

DC converters with excellent thermal and switching

characteristics. Inside the Power 33 package features two

N-channel MOSFETs with low on-state resistance and low gate

charge to maximize the power conversion and switching

efficiency. The Q1 switch also integrates gate protection from

unclamped voltage input.

Application

 DC - DC Conversion

FDMC6890NZ Dual N-Channel PowerTrench

October 2006

®

MOSFET

Up

S1

G1 G2

D1/S2

Power 33

D2

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 20 20 V

Gate to Source Voltage ±12 ±12 V

-Continuous 4

-Pulsed 10

Power Dissipation (Steady State) Q1 (Note 1a) 1.92

Power Dissipation (Steady State) Q2 1.78

Operating and Storage Junction Temperature Range -55 to +150 °C

Bottom

G1

D1

D1/S2

S1

= 25°C unless otherwise noted

A

D1/S2

G2

D2

D1/S2

S1

G2

4

5

6

3

D1/S2

2

G1

1

Thermal Characteristics

R

θJA

R

θJA

Thermal Resistance, Junction to Ambient Q1 (Note 1a) 65

Thermal Resistance, Junction to Ambient Q2 70

Package Marking and Ordering Information

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

6890N FDMC6890NZ Power 33 7inch 8mm 3000 units

1

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FDMC6890NZ Dual N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Typ e Min Typ Max Units

Off Characteristics

BV

∆BV ∆T

I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±12V, VDS= 0V

On Characteristics

V

GS(th)

∆V ∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA

Gate to Source Threshold Voltage Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance VDS = V, ID =4A

ID = 250µA, VGS = 0V Q1Q220

20

ID = 250µA, referenced to 25°C Q1

Q2

VDS = 16V, V

= 0V Q1

GS

Q2

Q1 Q2

Q1Q20.6

0.6

ID = 250µA, referenced to 25°C

VGS = 4.5V, ID = 4A VGS = 2.5V, ID = 3A

VGS = 4.5V, ID = 4A VGS = 2.5V, ID = 2A

Q1 Q2

Q1

Q2

Q1 Q2

V

13 12

0.9

1.0

-3

58 77

67

102

10

7

mV/°C

1 1

±10

±100µAnA

2 2

mV/°C

68

100

100 150

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

V

Output Capacitance

= 10V, VGS = 0V, f= 1MHZ

DS

Reverse Transfer Capacitance

Gate Resistance f = 1MHz

Q1 Q2

205 190

60 60

40 35

270 250

80 80

60 55

3.3

2.8

µA

V

mΩ

S

pF

Ω

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(2)

Q

gs

Q

gd

FDMC6890NZ Rev.C

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge at 4.5V V

Total Gate Charge at 2V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

VDD = 10V, ID = 4A, R

= 0V to 4.5V

GS

VDD = 10 V ID = 4A

2

GEN

= 6Ω

Q1 Q2

4 4

13 12

10

7

6 6

2.4

1.8

1.4

0.6

0.4

0.5

0.9

0.8

10 10

22 21

19 14

12 12

3.4

2.6

1.9

0.8

ns

nC

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FDMC6890NZ Dual N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge

a. 65°C/W when mounted on a 1 in2 pad of 2 oz copper

= 0V, IS = 4A

GS

I

= 4A, di/dt = 100A/s

F

Q1 Q2

0.94

0.92

Q1 Q2

is guaranteed by design while R

θJC

b. 150°C/W when mounted on a minimum pad of 2 oz copper

18

17

10

1.25

27 26

9

14 15

is determined by

θCA

V

ns

nC

®

MOSFET

FDMC6890NZ Rev.C

3

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FDMC6890NZ Dual N-Channel PowerTrench

Typical Characteristics (Q1 N-Channel)T

12

10

8

6

4

, DRAIN CURRENT (A)

D

2

I

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Figure 1.

1.4

ID = 4A

1.3

V

GS

1.2

1.1

1.0

NORMALIZED

0.9

0.8

0.7

DRAIN TO SOURCE ON-RESISTANCE

-50 -25 0 25 50 75 100 125 150

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

VGS = 4.5V

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

VGS = 2.5V

VGS = 1.8V

VDS, DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics Figure 2.

= 4.5V

TJ, JUNCTION TEMPERATURE (oC)

vs Junction Temperature

= 25°C unless otherwise noted

J

3.0

2.5

VGS = 1.8V

2.0

1.5

NORMALIZED

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 024681012

ID, DRAIN CURRENT(A)

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

200

(mΩ)

160

120

, DRAIN TO

80

DS(on)

r

SOURCE ON-RESISTANCE

40

1.5 2.0 2.5 3.0 3.5 4.0 4.5

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

V

= 2.5V

GS

V

= 4.5V

GS

ID = 4A

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

TJ = 150oC

o

T

= 25

C

J

®

MOSFET

9

8

7

6

5

4

3

2

, DRAIN CURRENT (A)

D

I

1

0

0.00.51.01.52.02.5

Figure 5. Transfer Characteristics

FDMC6890NZ Rev.C

PULSE DURATI ON = 80µs DUTY CYCLE = 0.5%MAX

TJ = 150oC

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = -55oC

20

10

V

= 0V

GS

1

TJ = 150oC

0.1

TJ = 25oC

0.01

, REVERSE DRAIN CURRENT (A)

S

I

1E-3

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55oC

Forward Voltage vs Source Current

4

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