Fairchild FDMC6679AZ service manual

FDMC6679AZ

P-Channel PowerTrench® MOSFET

-30 V, -20 A, 10 mΩ
Features

 Max r
 Max r
 HBM ESD protection level of 8 kV typical(note 3)
 Extended V
 High performance trench technology for extremely low r
 High power and current handling capability
 Termination is Lead-free and RoHS Compliant

= 10 mΩ at VGS = -10 V, ID = -11.5 A

DS(on)

= 18 mΩ at VGS = -4.5 V, ID = -8.5 A

DS(on)

range (-25 V) for battery applications

GSS

DS(on)

General Description

The FDMC6679AZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
package technologies have been combined to offer the lowest
r

and ESD protection.

DS(on)

Applications

 Load Switch in Notebook and Server
 Notebook Battery Pack Power Management

FDMC6679AZ P-Channel PowerTrench

July 2009

®

MOSFET

Top

Pin 1

S

Bottom

5

G

S

S

D

D

D

D

D

6

D

7

D

8

D

4

3

2

1

MLP 3.3x3.3

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage -30 V
Gate to Source Voltage ±25 V
Drain Current -Continuous (Package limited) TC = 25 °C -20

-Continuous (Silicon limited) T

-Continuous T

-Pulsed -32
Power Dissipation TC = 25 °C 41
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C -51

C

= 25 °C (Note 1a) -11.5

A

= 25 °C (Note 1a) 2.3

A

Thermal Characteristics

G

S

S

S

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 3
Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC6679AZ FDMC6679AZ MLP 3.3x3.3 13 ’’ 12 mm 3000 units

©2009 Fairchild Semiconductor Corporation
FDMC6679AZ Rev.D1

°C/W

1

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FDMC6679AZ P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆BV
∆T

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -30 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±25 V, V

I

= -250 µA, referenced to 25 °C 29 mV/°C

D

V

= -24 V, -1

DS

= 0 V, TJ = 125 °C -100

V

GS

= 0 V ±10 µA

DS

On Characteristics

V

GS(th)

∆V
∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA-1-1.8-3V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= -250 µA, referenced to 25 °C -7 mV/°C

D

V

= -10 V, ID = -11.5 A 8.6 10

GS

= -4.5 V, ID = -8.5 A 12 18

GS

= -10 V , ID = -11.5 A, TJ = 125 °C 12 15

V

GS

Forward Transconductance VDS = -5 V, ID = -11.5 A 46 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 570 755 pF
Reverse Transfer Capacitance 500 750 pF

= -15 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 4.3 Ω

2985 3970 pF

µA

mΩV

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 14 25 ns
Turn-Off Delay Time 63 100 ns
Fall Time 46 73 ns
Total Gate Charge VGS = 0 V to -10 V
Total Gate Charge VGS = 0 V to -5 V 37 52 nC
Gate to Source Charge 8.7 nC
Gate to Drain “Miller” Charge 17 nC

= -15 V, ID = -11.5 A,

V

DD

V

= -10 V, R

GS

GEN

= 6 Ω

Drain-Source Diode Characteristics

V

= 0 V, IS = -11.5 A (Note 2) 0.83 1.30

V

SD

t

rr

Q

rr

NOTES:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 16 28 nC

a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper

GS

= 0 V, IS = -1.6 A (Note 2) 0.71 1.20

V

GS

= -11.5 A, di/dt = 100 A/µs

I

F

= -15 V,

V

DD

I

= -11.5 A

D

12 21 ns

65 91 nC

31 49 ns

is guaranteed by design while R

θJC

b.125 °C/W when mounted on
a minimum pad of 2 oz copper

is determined by

θCA

V

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %.

3. The diode connected bet ween the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.

©2009 Fairchild Semiconductor Corporation
FDMC6679AZ Rev.D1

2

www.fairchildsemi.com

FDMC6679AZ P-Channel PowerTrench

Typical Characteristics T

32

24

16

, DRAIN CURRENT (A)

8

D

-I

0

0123

Figure 1.

1.6

ID = -11.5 A
V

= -10 V

GS

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

VGS = -10 V

VGS = -6 V

VGS = -4.5 V

VGS = -4 V

VGS = -3.5 V

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

On Region Characteristics Figure 2.

T

, JUNCTION TEMPERATURE (

J

= 25 °C unless otherwise noted

J

VGS = -3 V

o

C)

4

VGS = -3 V

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

3

VGS = -3.5 V

2

NORMALIZED

V

= -4 V

GS

VGS = -4.5 V

1

V

= -10 V

DRAIN TO SOURCE ON-RESISTANCE

VGS = -6 V

GS

0 8 16 24 32

-I

, DRAIN CURRENT (A)

D

Nor m a l i z e d On-Resis t a n c e

vs Drain Current and Gate Voltage

50

ID = -11.5 A

40

(mΩ)

30

DRAIN TO

,

20

DS(on)

r

10

SOURCE ON-RESISTANCE

0

246810

TJ = 25 oC

-V

, GATE TO SOURCE VOL TA G E (V)

GS

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

TJ = 125 oC

®

MOSFET

Fi gure 3 . No r mali zed O n Res i sta n ce

vs Junction Temperature

32

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

V

= -5 V

24

DS

16

8

, DRAIN CURRENT (A)

D

-I

0

1234

TJ = 25 oC

TJ = 150 oC

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

©2009 Fairchild Semiconductor Corporation
FDMC6679AZ Rev.D1

Figure 4.

On-Re sistance v s Gate to

Source Voltage

40

V

= 0 V

GS

10

TJ = 150 oC

1

TJ = -55 oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

-I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Sou rce to Drain Diode

TJ = 25 oC

TJ = -55 oC

Forward Voltage vs Source Current

3

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