Fairchild FDMC6675BZ service manual
FDMC6675BZ
P-Channel Power Trench® MOSFET
-30 V, -20 A, 14.4 m:
Features
Max r
Max r
HBM ESD protection level of 8 kV typical(note 3)
Extended V
High performance trench technology for extremely low r
High power and current handling capability
Termination is Lead-free and RoHS Compliant
= 14.4 m: at VGS = -10 V, ID = -9.5 A
DS(on)
= 27.0 m: at VGS = -4.5 V, ID = -6.9 A
DS(on)
range (-25 V) for battery applications
GSS
DS(on)
September 2010
General Description
The FDMC6675BZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
package technologies have been combined to offer the lowest
and ESD protection.
r
DS(on)
Application
Load Switch in Notebook and Server
Notebook Battery Pack Power Management
FDMC6675BZ P-Channel PowerTrench
®
MOSFET
Top
Pin 1
S
Bottom
5
G
S
S
D
D
D
D
D
6
D
7
D
8
D
MLP 3.3x3.3
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage -30 V
Gate to Source Voltage ±25 V
Drain Current -Continuous (Package limited) TC= 25 °C -20
-Continuous (Silicon limited) T
-Continuous T
-Pulsed -32
Power Dissipation TC = 25 °C 36
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C -40
C
= 25 °C (Note 1a) -9.5
A
= 25 °C (Note 1a) 2.3
A
Thermal Characteristics
G
4
3
S
2
S
S
1
A
W
R
TJC
R
TJA
Thermal Resistance, Junction to Case 3.4
Thermal Resistance, Junction to Ambient (Note 1a) 53
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMC6675BZ FDMC6675BZ MLP 3.3X3.3 13 ’’ 12 mm 3000 units
©2010 Fairchild Semiconductor Corporation
FDMC6675BZ Rev.D3
°C/W
1
www.fairchildsemi.com
FDMC6675BZ P-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
'BV
'T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = -250 PA, VGS = 0 V -30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I
= -250 PA, referenced to 25 °C 20 mV/°C
D
V
DS
V
GS
= -24 V,
= 0 V
= 125 °C -100
T
J
-1
Gate to Source Leakage Current VGS= ±25 V, VDS = 0 V ±10 PA
On Characteristics
V
GS(th)
'V
'T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = -250 PA -1.0 -1.9 -3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= -250 PA, referenced to 25 °C -6 mV/°C
D
V
= -10 V, ID = -9.5 A 10.7 14.4
GS
= -4.5 V, ID = -6.9 A 17.4 27.0
GS
= -10 V, ID = -9.5 A, TJ = 125 °C 15.2 20.5
V
GS
Forward Transconductance VDD = -5 V, ID = -9.5 A 28 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 392 525 pF
Reverse Transfer Capacitance 349 525 pF
= -15 V, VGS = 0 V,
V
DS
f = 1 MHz
2154 2865 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g(TOT)
gs
gd
Turn-On Delay Time
Rise Time 10 20 ns
Turn-Off Delay Time 44 71 ns
= -15 V, ID = -9.5 A,
V
DD
V
= -10 V, R
GS
GEN
= 6 :
Fall Time 26 42 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 6.4 nC
= 0 V to -10 V
GS
= 0 V to -5 V 26 37 nC
GS
V
DD
I
= -9.5 A
D
= -15 V,
Gate to Drain “Miller” Charge 13 nC
11 20 ns
46 65 nC
m:V
PA
®
MOSFET
Drain-Source Diode Characteristics
V
= 0 V, IS= -9.5 A (Note 2) 0.89 1.3 V
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJA
the user's board design.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.
3. The diode connected between the gate and source ser vers only as protection ag ainst ESD. No gate overvoltage rating is implied.
FDMC6675BZ Rev.D3
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 15 27 nC
a. 53 °C/W when mounted on
a 1 in2pad of 2 oz copp er
GS
= 0 V, IS= -1.6 A (Note 2) 0.73 1.2 V
V
GS
= -9.5 A, di/dt = 100 A/Ps
I
F
2©2010 Fairchild Semiconductor Corporation
24 38 ns
is guaranteed by design while R
TJC
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
is determined by
TCA
www.fairchildsemi.com
FDMC6675BZ P-Channel PowerTrench
Typical Characteristics T
32
24
16
DRAIN CURRENT (A)
,
D
8
-I
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Figure 1.
1.6
ID = -9.5 A
V
GS
1.4
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
VGS = -4 V
VGS = -4.5 V
VGS = -6 V
VGS = -10 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
,
-V
DRAIN TO SOURCE VOLTAGE (V)
DS
On Region Characteristics
= -10 V
,
T
JUNCTION TEMPERATURE
J
vs Junction Temperature
= 25 °C unless otherwise noted
J
VGS = -3.5 V
o
(
)
C
5.0
4.5
VGS= -3.5 V
4.0
3.5
3.0
2.5
2.0
NORMALIZED
1.5
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 8 16 24 32
-I
Figure 2.
N o r m a l i z e d O n - R e s i s t a n c e
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5%MAX
, DRAIN CURRENT (A)
D
VGS = -4 V
V
V
VGS = -10 V
GS
GS
= -4.5 V
= -6 V
vs Drain Current and Gate Voltage
50
)
:
m
40
(
30
DRAIN TO
,
20
DS(on)
r
10
SOURCE ON-RESISTANCE
0
246810
-V
GATE TO SOURCE VOLTAGE (V)
,
GS
Figure 4.
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
ID= -9.5 A
TJ= 125 oC
TJ= 25 oC
Source Voltage
®
MOSFET
32
24
16
, DRAIN CURRENT (A)
8
D
-I
0
012345
Figure 5. Transfer Characteristics
FDMC6675BZ Rev.D3
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
V
= -5 V
DS
TJ = 150 oC
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25 oC
TJ = -55 oC
100
VGS= 0 V
10
TJ= 150 oC
TJ = 25 oC
0.1
, REVERSE DRAIN CURRENT (A)
S
-I
0.01
0.2 0.4 0.6 0.8 1.0 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
TJ = -55 oC
Forward Voltage vs Source Current
3©2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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