Fairchild FDMC4435BZ service manual

FDMC4435BZ

P-Channel Power Trench® MOSFET

-30 V, -18 A, 20 m:

Features

 Max r

 Extended V

 High performance trench technology for extremely low r

 High power and current handling capability

 HBM ESD protection level >7 kV typical (Note 4)

 100% UIL Tested

 Termination is Lead-free and RoHS Compliant

= 20 m: at VGS = -10 V, ID = -8.5 A

DS(on)

= 37 m: at VGS = -4.5 V, ID = -6.3 A

DS(on)

range (-25 V) for battery applications

GSS

DS(on)

September 2010

General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

process that has

Applications

 High side in DC - DC Buck Converters

 Notebook battery power management

 Load switch in Notebook

FDMC4435BZ P-Channel Power Trench

MOSFET

Top

Pin 1

Bottom

MLP 3.3x3.3

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage -30 V

Gate to Source Voltage ±25 V

Drain Current -Continuous (Package limited) TC= 25 °C -18

-Continuous (Silicon limited) T

-Continuous T

-Pulsed -50

Single Pulse Avalanche Energy (Note 3) 24 mJ

Power Dissipation TC = 25 °C 31

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C -32

= 25 °C (Note 1a) -8.5

= 25 °C (Note 1a) 2.3

Thermal Characteristics

TJC

TJA

Thermal Resistance, Junction to Case 4

Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC4435BZ FDMC4435BZ MLP 3.3X3.3 13 ’’ 12 mm 3000 units

°C/W

www.fairchildsemi.com

Electrical Characteristics T

Symbol Parameter Test Conditions Min Typ Max Units

= 25 °C unless otherwise noted

Off Characteristics

'BV 'T

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = -250 PA, VGS = 0 V -30 V

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

= -250 PA, referenced to 25 °C - 22 mV/°C

= -24 V, -1

= 0 V, TJ = 125 °C -100

Gate to Source Leakage Current VGS = ±25 V, VDS= 0 V ±10 PA

On Characteristics

GS(th)

'V 'T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = -250 PA -1.0 -1.9 -3.0 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

= -250 PA, referenced to 25 °C 5.3 mV/°C

= -10 V, ID = -8.5 A 15 20

= -4.5 V, ID = -6.3 A 23 37

= -10 V, ID = -8.5 A,

= 125 °C

21 28

Forward Transconductance VDD = -5 V, ID = -8.5 A 24 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance 295 395 pF

Reverse Transfer Capacitance 260 385 pF

= -15 V, VGS = 0 V,

f = 1 MHz

1540 2045 pF

Gate Resistance f = 1 MHz 5 :

FDMC4435BZ P-Channel Power Trench

MOSFET

Switching Characteristics

d(on)

d(off)

Turn-On Delay Time

Rise Time 612ns

Turn-Off Delay Time 34 55 ns

= -15 V, ID = -8.5 A,

= -10 V, R

GEN

= 6 :

Fall Time 20 36 ns

Total Gate Charge VGS = 0 V t o - 1 0 V

Total Gate Charge VGS = 0 V to -4.5 V 17 24 nC

Gate to Source Charge 5 nC

Gate to Drain “Miller” Charge 9 nC

Drain-Source Diode Characteristics

= 0 V, IS= -8.5A (Note 2) 0.92 1.5

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 11 nC

a. 53 °C/W when mounted on

pad of 2 oz copp er

a 1 i n

= 0 V, IS= -1.9 A (Note 2) 0.75 1.2

= -8.5 A, di/dt = 100 A/Ps

= -8.5 A

= -15 V,

is guaranteed by design while R

TJC

b.125 °C/W when mounted on a minimum pad of 2 oz copper

10 20 ns

33 46 nC

22 ns

is determined by

TCA

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.

of 24 mJ is based on starting T = 25 °C, L = 1 mH, I = -4 A.

4. The diode connected betwe en the gate and source servers only as protection against ESD. No gate overvolt age rating is implied.

= -7 A, V = -27 V, V = -10 V. 100% test at L = 3 mH, I

AS AS

www.fairchildsemi.com2

FDMC4435BZ P-Channel Power Trench

Typical Characteristics T

, DRAIN CURRENT (A)

-I

01234

Figure 1.

-V

On-Region Characteristics Figure 2.

1.6

ID = -8.5A V

= -10V

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (

VGS = -5V

VGS = -10V

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

DRAIN TO SOURCE VOLTAGE (V)

= 25°C unless otherwise noted

VGS = -4.5V

VGS = - 4V

VGS = -3.5V

4.0

3.5

3.0

VGS = -3.5V

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

VGS = -4V

2.5

VGS = -4.5V

=-5V

NORMALIZED

2.0

1.5

1.0

= -10V

DRAIN TO SOURCE ON-RESISTANCE

0.5 0 1020304050

DRAIN CURRENT(A)

-I

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

PULSE DURATION = 80Ps

(m:)

, DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

246810

TJ= 25oC

-V

, GATE TO SOURCE VOLTAGE (V)

DUTY CYCLE = 0.5%MAX

ID= -8.5A

TJ= 125oC

MOSFET

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

VDS= -5V

, DRAIN CURRENT (A)

-I

12345

TJ= 150oC

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

TJ = 25oC

TJ = -55oC

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

= 0V

TJ= 150oC

TJ = 25oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

-I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55oC

Forward Voltage vs Source Current

www.fairchildsemi.com3

+ 4 hidden pages