Fairchild FDMC3612 service manual

FDMC3612

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MLP 3.3x3.3

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N-Channel Power Trench® MOSFET

100 V, 12 A, 110 mΩ

Features

 Max r
 Max r
 Low Profile - 1 mm max in Power 33

 100% UIL Tested
 RoHS Compliant

= 110 mΩ at VGS = 10 V, ID = 3.3 A

DS(on)

= 122 mΩ at VGS = 6 V, ID = 3.0 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

Applications

 DC - DC Conversion
 PSE Switch

February 2012

®

process that has

FDMC3612 N-Channel PowerTrench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC3612 FDMC3612 Power 33 13’’ 12

©2012 Fairchild Semiconductor Corporation
FDMC3612 Rev.C2

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 16

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 15
Single Pulse Avalanche Energy (Note 3) 32 mJ
Power Dissipation TC = 25 °C 35
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to + 150 °C

Thermal Resistance, Junction to Case 3.5
Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

C

C
A

A

1

= 25 °C 12
= 25 °C (Note 1a) 3.3

= 25 °C (Note 1a) 2.3

mm 3000 units

A

W

°C/W

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FDMC3612 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 109 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 2.5 4.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -7 mV/°C

D

V

= 10 V, ID = 3.3 A 92 110

GS

= 6 V, ID = 3.0 A 98 122

GS

= 10 V , ID = 3.3 A, TJ = 125 °C 177 212

V

GS

Forward Transconductance VDS = 10 V, ID = 3.3 A 13 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 40 55 pF
Reverse Transfer Capacitance 23 35 pF
Gate Resistance 1.3 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 2.8 10 ns
Turn-Off Delay Time 19 34 ns
Fall Time 210ns
Total Gate Charge V
Total Gate Charge V
Total Gate Charge 2.3 nC
Gate to Drain “Miller” Charge 3.7 nC

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

= 50 V, ID = 3.3 A,

V

DD

V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 5 V 7.9 12 nC

GS

= 6 Ω

GEN

VDD = 50 V,
I

D

= 3.3 A

662 880 pF

7.4 15 ns

14.4 21 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 8 A, VDD = 90 V, VGS = 10 V.

©2012 Fairchild Semiconductor Corporation
FDMC3612 Rev.C2

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 37 60 nC

a) 53 °C/W when mounted
on a 1 in

V
V

I

F

2

pad of 2 oz copper

= 0 V, IS = 3.3 A (Note 2) 0.88 1.2

GS

= 0 V, IS = 2 A (Note 2) 0.77 1.2

GS

= 3.3 A, di/dt = 100 A/μs

θJC

2

34 55 ns

is guaranteed by design while R

b) 125 °C/W when mounted
on a minimum pad of 2 oz
copper

V

is determined by

θCA

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FDMC3612 N-Channel PowerTrench

012345

0

3

6

9

12

15

VGS = 4 V

VGS = 3.5 V

VGS = 4.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 6 V

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

03691215

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 6 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4 V

VGS = 4.5 V

VGS = 3.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

ID = 3.3 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

100

200

300

400

TJ = 125 oC

ID = 3.3 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOL TAG E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

2.0 2.5 3.0 3.5 4.0 4.5 5.0

0

3

6

9

12

15

TJ = 150 oC

V

DS

= 5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

20

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics

= 25 °C unless otherwise noted

J

Figure 2.

Normali z e d O n - R esistance

vs Drain Current and Gate Voltage

®

MOSFET

Fig u re 3. Norma l ized O n Res i stan c e

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation
FDMC3612 Rev.C2

Figure 5. Transfer Characteristics

Figure 4.

On-R esistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Di ode

Forward Voltage vs Source Current

3

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