Fairchild FDMC3020DC service manual

FDMC3020DC

N-Channel Dual CoolTM PowerTrench® MOSFET

30 V, 40 A, 6.25 mΩ

Features

 Dual CoolTM Top Side Cooling PQFN package

 Max r

 High performance technology for extremely low r

 RoHS Compliant

= 6.25 mΩ at VGS = 10 V, ID = 12 A

DS(on)

= 9.0 mΩ at VGS = 4.5 V, ID = 10 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench Advancements in both silicon and Dual Cool technologies have been combined to offer the lowest r while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Applications

 Synchronous Rectifier for DC/DC Converters

 Telecom Secondary Side Rectification

 High End Server/Workstation

July 2012

process.

package

DS(on)

FDMC3020DC N-Channel Dual Cool

PowerTrench

Pin 1

Top

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

dv/dt Peak Diode Recovery dv/dt (Note 4) 1.6 V/ns

, T

STG

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC = 25 °C 40

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 100

Single Pulse Avalanche Energy (Note 3) 60 mJ

Power Dissipation TC = 25 °C 50

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

Power 33

Bottom

= 25°C unless otherwise noted

= 25 °C 70

= 25 °C (Note 1a) 17

= 25 °C (Note 1a) 3.0

Thermal Characteristics

MOSFET

θJC

θJA

Thermal Resistance, Junction to Case (Top Source) 7.9

Thermal Resistance, Junction to Case (Bottom Drain) 2.5

Thermal Resistance, Junction to Ambient (Note 1a) 42

Thermal Resistance, Junction to Ambient (Note 1b) 105

Thermal Resistance, Junction to Ambient (Note 1i) 17

Thermal Resistance, Junction to Ambient (Note 1j) 26

Thermal Resistance, Junction to Ambient (Note 1k) 12

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

3020 FDMC3020DC Dual Cool

Power 33 13’’ 12 mm 3000 units

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°C/W

FDMC3020DC N-Channel Dual Cool

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current VDS = 24 V, V

Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 17 mV/°C

= 0 V 1 μA

= 0 V ±100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.9 3.0 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C -6 mV/°C

= 10 V, ID = 12 A 5.0 6.25

= 4.5 V, ID = 10 A 7.2 9.0

= 10 V, ID = 12 A, TJ = 125 °C 7.5 9.1

Forward Transconductance VDS = 5 V, ID = 12 A 44 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance 513 685 pF

Reverse Transfer Capacitance 87 135 pF

= 15 V, VGS = 0 V,

f = 1 MHz

Gate Resistance 0.9 Ω

1038 1385 pF

0.1 2.0

Switching Characteristics

d(on)

d(off)

Turn-On Delay Time

Rise Time 310ns

Turn-Off Delay Time 19 35 ns

= 15 V, ID = 12 A,

= 10 V, R

GEN

= 6 Ω

Fall Time 210ns

Total Gate Charge VGS = 0 V to 10 V

Total Gate Charge VGS = 0 V to 4.5 V 7.1 10.6 nC

Gate to Source Gate Charge 3 nC

= 12 A

= 15 V,

Gate to Drain “Miller” Charge 2.5 nC

918ns

15.5 23 nC

mΩV

PowerTrench

MOSFET

Drain-Source Diode Characteristics

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 9 18 nC

= 0 V, IS = 12 A (Note 2) 0.82 1.3

= 0 V, IS = 1.9 A (Note 2) 0.73 1.2

= 12 A, di/dt = 100 A/μs

25 45 ns

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Thermal Characteristics

FDMC3020DC N-Channel Dual Cool

θJC

θJA

NOTES:

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

1. R

θJA

by the user's board design.

Thermal Resistance, Junction to Case (Top Source) 7.9

Thermal Resistance, Junction to Case (Bottom Drain) 2.5

Thermal Resistance, Junction to Ambient (Note 1a) 42

Thermal Resistance, Junction to Ambient (Note 1b) 105

Thermal Resistance, Junction to Ambient (Note 1c) 29

Thermal Resistance, Junction to Ambient (Note 1d) 40

Thermal Resistance, Junction to Ambient (Note 1e) 19

Thermal Resistance, Junction to Ambient (Note 1f) 23

Thermal Resistance, Junction to Ambient (Note 1g) 30

Thermal Resistance, Junction to Ambient (Note 1h) 79

Thermal Resistance, Junction to Ambient (Note 1i) 17

Thermal Resistance, Junction to Ambient (Note 1j) 26

Thermal Resistance, Junction to Ambient (Note 1k) 12

Thermal Resistance, Junction to Ambient (Note 1l) 16

a. 42 °C/W when mounted on a 1 in2 pa d of 2 oz c opp er

is guaranteed by design while R

θJC

b. 105 °C/W when mounted on a minimum pad of 2 oz copper

is determined

θCA

°C/W

PowerTrench

MOSFET

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in

d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper

e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper

f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper

h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper

i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in

j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper

k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper

l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. EAS of 60 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 11 A, VDD = 27 V, VGS = 10 V.

4. ISD ≤ 12 A, di/dt ≤ 100 A/μs, VDD ≤ BV

, Starting TJ = 25 oC.

DSS

pad of 2 oz copper

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