Fairchild FDMC2674 service manual

tm

FDMC2674
N-Channel UltraFET Trench MOSFET

220V, 7.0A, 366mΩ
Features

 Max r
 Typ Qg = 12.7nC at VGS = 10V
 Low Miller charge
 Low Qrr Body Diode
 Optimized efficiency at high frequencies
 UIS Capability ( Single Pulse and Repetitive Pulse)
 RoHS Compliant

= 366mΩ at VGS = 10V, ID = 1.0A

DS(on)

General Description

UltraFET device combines characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r
these devices are ideal for high frequency DC to DC converters.

DS(on)

Application

 DC/DC converters and Off-Line UPS
 Distributed Power Architectures

FDMC2674 N-Channel UltraFET Trench MOSFET

January 2007

, low ESR, low total and Miller gate charge,

Bottom

8

7

6

5

1

2

3

4

D

D

Top

D

D

G

S

S

S

D

5

D

6

D

7

D

8

Power 33

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 220 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Silicon limited) TC= 25°C 7.0

-Pulsed 13.8
Power Dissipation TC = 25°C 42
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

A

= 25°C (Note 1b) 1.0

A

= 25°C (Note 1a) 2.1

A

Thermal Characteristics

G

4

S

3

S

2

S

1

A -Continuous T

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case (Note 1) 3.0
Thermal Resistance, Junction to Ambient (Note 1a) 60

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC2674 FDMC2674 Power 33 7’’ 8mm 3000 units

©2006 Fairchild Semiconductor Corporation
FDMC2674 Rev.F

°C/W

1

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FDMC2674 N-Channel UltraFET Trench MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

ΔV

GS(th)

ΔT

J

r

DS(on)

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 220 V
Breakdown Voltage Temperature

Coefficient

ID = 250μA, referenced to 25°C 248 mV/°C

Zero Gate Voltage Drain Current VDS = 176V, VGS = 0V 1 μA
Gate to Source Leakage Current VGS = ±20V, V

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 2 3.4 4 V
Gate to Source Threshold Voltage

Temperature Coefficient
Static Drain to Source On Resistance

ID = 250μA, referenced to 25°C -10.2 mV/°C
VGS = 10V, ID = 1.0A 305 366

VGS = 10V , ID = 1.0A , TJ = 150°C 678 814

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 70 95 pF
Reverse Transfer Capacitance 11 20 pF

VDS = 100V, VGS = 0V,
f = 1MHz

880 1180 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 13 23 ns
Turn-Off Delay Time 15 27 ns

VDD = 100V, ID = 1.0A
VGS = 10V, R

GEN

= 2.4Ω

9 18 ns

Fall Time 21 34 ns
Total Gate Charge at 10V V
Gate to Source Gate Charge 3.8 nC

= 0V to 10V

GS

VDD = 15V
ID = 1.0A

12.7 18 nC

Gate to Drain “Miller” Charge 2.9 nC

mΩ

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

θJA

user's board design.

(a)R

θJA

(b)R

θJA

2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.

FDMC2674 Rev.F

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 109 nC

is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

= 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
= 135°C/W when mounted on a minimum pad of 2 oz copper.

= 0V, IS = 2.2A (Note 2) 0.8 1.5 V

GS

IF = 1.0A, di/dt = 100A/μs

a. 60°C/W when mounted on

2

pad of 2 oz copper

a 1 in

60 ns

is guaranteed by design while R

θJC

b. 135°C/W when mounted on a
minimum pad of 2 oz copper

2

is determined by the

θJA

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FDMC2674 N-Channel UltraFET Trench MOSFET

Typical Characteristics T

3.0

2.5

2.0

1.5

1.0

, DRAIN CURRENT (A)

D

I

0.5

0.0

0.0 0.5 1.0 1.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

On-Region Characteristics Figure 2.

2.4

ID = 1A

= 10V

V

2.0

GS

1.6

1.2

NORMALIZED

0.8

0.4

DRAIN TO SOURCE ON-RESISTANCE

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

Fi g u re 3. N o rmal i z e d On - R e sist a n ce

vs Junction Temperature

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

= 25°C unless otherwise noted

J

V

= 10V

GS

V

= 7V

GS

V

= 5V

GS

V

= 4.5V

GS

1.6

V

= 4.5V

GS

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

1.4

VGS = 5.0V

1.2

NORMALIZED

1.0

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.5 1.0 1.5 2.0 2.5 3.0

ID, DRAIN CURRENT(A)

V

VGS = 10V

Nor m a l i z e d On-Res i s t a n c e

vs Drain Current and Gate Voltage

0.8

0.7

(Ω)

ID = 1A

0.6

0.5

, DRAIN TO

0.4

DS(on)

R

0.3

SOURCE ON-RESISTANCE

0.2
4 8 12 16 20

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4.

On- Resistance vs Gate to

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

TJ = 150oC

TJ = 25oC

Source Voltage

GS

= 7V

4

3

2

1

, DRAIN CURRENT (A)

D

I

0

FDMC2674 Rev.F

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

V

= 5V

DD

TJ = 150oC

TJ = 25oC

TJ = -55oC

23456

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

3

20

10

V

= 0V

GS

1

TJ = 150oC

0.1

0.01

TJ = -55oC

1E-3

, REVERSE DRAIN CURRENT (A)

S

I

1E-4

0.0 0.3 0.6 0.9 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

TJ = 25oC

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