Fairchild FDMC2523P service manual

tm

FDMC2523P

Power 33

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P-Channel QFET®

-150V, -3A, 1.5Ω
Features

 Max r
 Low Crss ( typical 10pF)
 Fast Switching
 Low gate charge ( typical 6.2 nC )
 Improved dv / dt capability
 RoHS Compliant

= 1.5Ω at VGS = -10V, ID = -1.5A

DS(on)

General Description

These P-Channel MOSFET enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology. This advanced technology has
been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices
are well suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and DC
motor control.

Application

 Active Clamp Switch

FDMC2523P P-Channel QFET

January 2007

®

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

T

L

dv/dt Peak Diode Recovery dv/dt (Note 2) -5 V/ns

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

©2006 Fairchild Semiconductor Corporation
FDMC2523P Rev.C

Device Marking Device Package Reel Size Tape Width Quantity

FDMC2523P FDMC2523P Power 33 7’’ 8mm 3000 units

Drain to Source Voltage -150 V
Gate to Source Voltage ±30 V
Drain Current -Continuous TC = 25°C -3

-Pulsed -12
Power Dissipation (Steady State) TC = 25°C 42 W
Operating and Storage Junction Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 °C

Thermal Resistance, Junction to Case (Note 1) 3.0
Thermal Resistance, Junction to Ambient (Note 1a) 60

= 25°C unless otherwise noted

A

= 100°C -1.8

C

A -Continuous T

°C/W

1

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FDMC2523P P-Channel QFET

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = -250μA, VGS = 0V -150 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±30V, V

ID = -250μA, referenced to 25°C -138 mV/°C
VDS = -150V, VGS = 0V -1

TJ = 125°C -10

= 0V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = -250μA -3 -3.8 -5 V
Gate to Source Threshold Voltage

Temperature Coefficient
Static Drain to Source On Resistance

ID = -250μA, referenced to 25°C 6 mV/°C
VGS = -10V, ID = -1.5A 1.1 1.5 Ω

VGS = -10V , ID = -1.5A , TJ = 125°C 2.0 3.6

Forward Transconductance VDS = -40V , ID = -1.5A (Note 4) 1.4 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 60 80 pF
Reverse Transfer Capacitance 10 15 pF

VDS = -25V, VGS = 0V,
f = 1MHz

200 270 pF

Gate Resistance f = 1MHz 7.5 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q

Q

g
gs

gd

Turn-On Delay Time
Rise Time 11 20 ns
Turn-Off Delay Time 19 35 ns
Fall Time 13 24 ns
Total Gate Charge V
Gate to Source Gate Charge 1.4 nC

Gate to Drain “Miller” Charge 3.3 nC

VDD = -75V, ID = -3A
VGS = -10V, R

= -10V

GS

VDD = -75V

GEN

= 25Ω

(Note 3,4)

ID = -3A

(Note 3,4)

15 27 ns

6.2 9 nC

μA

®

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: R

θJA

R

is guaranteed by design while R

θJC

2: ISD < -3A, dI/dt < 300A/us, VDD < B
3: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
4: Essentially independent of operating temperature.

FDMC2523P Rev.C

Maximum continuous Drain - Source Diode Forward Current -3 A
Maximum Pulse Drain - Source Doide Forward Current -12 A
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 0.27 nC

is the sum of the junction-to-case and case-to- ambien t thermal resistan ce wher e the case the rmal r efere nce is de fined as the sold er moun ting su rfac e of the dr ain pi ns.

is determined by the user's board design.

θCA

, Starting TJ = 25°C

VDSS

GS

IF = -3.0A, di/dt = 100A/μs
(Note 3)

a. 60°C/W when mounted on
a 1 in2 pad of 2 oz copper

= 0V, IS = -3.0A -1.8 -5 V

93 ns

b.135°C/W when mounted on a
minimum pad of 2 oz copper

2

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FDMC2523P P-Channel QFET

0246810

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = -8V

VGS = -9V

VGS = -6V

VGS = -7V

VGS = -10V

PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX

-VDS, DRAIN TO SOURCE VOLTA GE (V)

- I

D

, DRAIN CURRENT (A)

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0.8

1.0

1.2

1.4

1.6

V

GS

= -9V

V

GS

= -8V

V

GS

= -10V

V

GS

= -7V

PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX

V

GS

= -6V

-ID, DRAIN CURRENT(A)

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-50 -25 0 25 50 75 100 125 150

0.3

0.6

0.9

1.2

1.5

1.8

2.1

ID = -3A
V

GS

= -10V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

TJ, JUNCTION TEMPERATURE (oC)

5678910

1.0

1.5

2.0

2.5

3.0

3.5

4.0

PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX

TJ = 125oC

T

J

= 25

o

C

ID = -0.75A

r

DS(on)

, DRAIN TO

SOURCE ON-RESISTANCE

(Ω)

-VGS, GATE TO SOURCE VOLTAGE (V)

2345678

0.0

0.5

1.0

1.5

2.0

2.5

3.0

V

DD

= -5V

PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX

TJ = -55oC

TJ = 25oC

TJ = 125oC

- I

D

, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.5 1.0 1.5 2.0 2.5

1E-4

1E-3

0.01

0.1

1

10

TJ = -55oC

TJ = 25oC

TJ = 125oC

V

GS

= 0V

- I

S

, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWA R D V OL TAGE (V)

Typical Characteristics T

Figure 1. On-Region Characteristics Figure 2. No rmali zed On -Resi stanc e

= 25°C unless otherwise noted

J

®

vs Drain Current and Gate Voltage

Figure 3 . N or maliz ed On - Resist an ce

vs Junction Temperature

FDMC2523P Rev.C

Figure 5. Transfer Characteristics Figure 6. Sou rce to Drain Diode

Figure 4. On-Resistance v s Gate to

Source Voltage

Forward Voltage vs Source Current

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