Fairchild FDMC2512SDC service manual

FDMC2512SDC

Top

Power 33

Bottom

Pin 1

4 3 2 1

5 6 7 8

D D

N-Channel Dual CoolTM PowerTrench® SyncFET

25 V, 40 A, 2.0 mΩ

Features

 Dual CoolTM Top Side Cooling PQFN package  Max r  Max r  High performance technology for extremely low r  SyncFET Schottky Body Diode

 RoHS Compliant

= 2.0 mΩ at VGS = 10 V, ID = 27 A

DS(on)

= 2.95 mΩ at VGS = 4.5 V, ID = 22 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench Advancements in both silicon and Dual Cool technologies have been combined to offer the lowest r while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.

Applications

 Synchronous Rectifier for DC/DC Converters  Telecom Secondary Side Rectification  High End Server/Workstation Vcore Low Side

July 2010

process.

package

DS(on)

FDMC2512SDC N-Channel Dual Cool

PowerTrench

SyncFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

dv/dt Peak Diode Recovery dv/dt (Note 5) 1.8 V/ns P

, T

STG

Drain to Source Voltage 25 V Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 40

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200 Single Pulse Avalanche Energy (Note 3) 144 mJ

Power Dissipation TC = 25 °C 66 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

= 25 °C 148

= 25 °C (Note 1a) 32

= 25 °C (Note 1a) 3.0

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

2512S FDMC2512SDC Dual Cool

Power 33 13’’ 12 mm 3000 units

°C/W

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FDMC2512SDC N-Channel Dual Cool

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 20 V, V Gate to Source Leakage Current, Forward VGS = 20 V, V

= 10 mA, referenced to 25 °C 21 mV/°C

= 0 V 500 μA

= 0 V 100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.7 2.5 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 10 mA, referenced to 25 °C -4 mV/°C

= 10 V, ID = 27 A 1.6 2.0

= 4.5 V, ID = 22 A 2.4 2.95

= 10 V, ID = 27 A, TJ = 125 °C 2.2 2.8

Forward Transconductance VDD = 5 V, ID = 27 A 154 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 1010 1345 pF Reverse Transfer Capacitance 168 255 pF Gate Resistance 1.2 2.1 Ω

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 714ns Turn-Off Delay Time 34 55 ns Fall Time 510ns Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 4.5 V 22 31 nC Gate to Source Gate Charge 11 nC Gate to Drain “Miller” Charge 5.5 nC

= 13 V, VGS = 0 V,

f = 1 MHz

= 13 V, ID = 27 A,

= 10 V, R

GEN

= 6 Ω

= 27 A

= 13 V,

3315 4410 pF

14 26 ns

49 68 nC

mΩV

PowerTrench

SyncFET

Drain-Source Diode Characteristics

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 29 46 nC

= 0 V, IS = 27 A (Note 2) 0.8 1.2

= 0 V, IS = 2 A (Note 2) 0.43 0.8

= 27 A, di/dt = 300 A/μs

30 48 ns

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Thermal Characteristics

FDMC2512SDC N-Channel Dual Cool

θJC

θJA

NOTES:

1. R

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

θJA

by the user's board design.

Thermal Resistance, Junction to Case (Top Source) 4.5 Thermal Resistance, Junction to Case (Bottom Drain) 1.9 Thermal Resistance, Junction to Ambient (Note 1a) 42 Thermal Resistance, Junction to Ambient (Note 1b) 105 Thermal Resistance, Junction to Ambient (Note 1c) 29 Thermal Resistance, Junction to Ambient (Note 1d) 40 Thermal Resistance, Junction to Ambient (Note 1e) 19 Thermal Resistance, Junction to Ambient (Note 1f) 23 Thermal Resistance, Junction to Ambient (Note 1g) 30 Thermal Resistance, Junction to Ambient (Note 1h) 79 Thermal Resistance, Junction to Ambient (Note 1i) 17 Thermal Resistance, Junction to Ambient (Note 1j) 26 Thermal Resistance, Junction to Ambient (Note 1k) 12 Thermal Resistance, Junction to Ambient (Note 1l) 16

a. 42 °C/W when mounted on

a 1 in

pad of 2 oz copper

is guaranteed by design while R

θJC

b. 105 °C/W when mounted on a minimum pad of 2 oz copper

is determined

θCA

°C/W

PowerTrench

SyncFET

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Alumi num He at Si nk, 1 in j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41 B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. EAS of 144 mJ is based on starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 17 A, VDD = 23 V, VGS = 10 V. 100% test at L= 0.3 mH, IAS = 25 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

5. ISD ≤ 27 A, di/dt ≤ 200 A/μs, VDD ≤ BV

, Starting TJ = 25 oC.

DSS

pad of 2 oz copper

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