Fairchild FDMB3800N service manual

tm

FDMB3800N
Dual N-Channel PowerTrench® MOSFET

30V, 4.8A, 40mΩ

Features

 Max r

 Max r

 Fast switching speed

 Low gate Charge

 High performance trench technology for extremely low r

 High power and current handling capability.

 RoHS Compliant

= 40mΩ at VGS = 10V, ID = 4.8A

DS(on)

= 51mΩ at VGS = 4.5V, ID = 4.3A

DS(on)

DS(on)

General Description

These N-Channel Logic Level MOSFETs are produced using
Fairchild Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state resistance
and yet maintain superior switching performance.

These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.

FDMB3800N Dual N-Channel PowerTrench

October 2006

®

MOSFET

Q2

Q1

4

G2

3

S2

2

G1

1

S1

5

D2

D2

6

7

D1

D1

8

MicroFET 3X1.9

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current -Continuous TA = 25°C (Note 1a) 4.8

-Pulsed 9

Power Dissipation TA = 25°C Note 1a) 1.6

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

A

= 25°C (Note 1b) 0.75

A

Thermal Characteristics

R

θJA

R

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 80

Thermal Resistance, Junction to Ambient (Note 1b) 165

Package Marking and Ordering Information

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

3800 FDMB3800N MicroFET3X1.9 7’’ 8mm 3000 units

©2006 Fairchild Semiconductor Corporation
FDMB3800N Rev. C1

1

www.fairchildsemi.com

FDMB3800N Dual N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V, V

ID = 250µA, referenced to 25°C 24 mV/°C

VDS = 24V, 1

V

= 0V TJ = 55°C 10

GS

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1 1.9 3 V

Gate to Source Threshold Voltage
Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance VDS = 5V, ID = 4.8A 14 S

ID = 250µA, referenced to 25°C -4 mV/°C

VGS = 10V, ID = 4.8A 32 40

VGS = 10V, ID = 4.8A, TJ = 125°C 43 61

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 90 120 pF

Reverse Transfer Capacitance 40 60 pF

VDS =15V, VGS = 0V,
f = 1MHz

350 465 pF

Gate Resistance f = 1MHz 3 Ω

µA

mΩVGS = 4.5V, ID = 4.3A 41 51

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 5 10 ns

Turn-Off Delay Time 21 34 ns

VDD = 15V, ID = 1A
VGS = 10V, R

GEN

Fall Time 2 10 ns

Total Gate Charge at 5V V

= 0V to 5V

GS

Gate to Source Gate Charge 1.0 nC

Gate to Drain “Miller” Charge 1.5 nC

Drain-Source Diode Characteristics

I

S

V

SD

t

rr

Q

rr

Notes:

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1: R

θJA

the user's board design.

Maximum Continuous Drain - Source Diode Forward Current 1.25 A

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge 7 nC

a. 80°C/W when mounted on

2

a 1 in

pa d o f 2 oz co pp er

= 0V, IS = 1.25A (Note 2) 0.8 1.2 V

GS

IF = 4.8A, di/dt = 100A/µs

= 6Ω

VDD = 15V
ID = 7.5A

8 16 ns

4 5.6 nC

17 ns

is guaranteed by design while R

θJC

b. 165°C/W when mounted on a
minimum pad of 2 oz copper

is determined by

θCA

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

FDMB3800N Rev.C1

2

www.fairchildsemi.com

FDMB3800N Dual N-Channel PowerTrench

5

V

V

0

)

V

0

C

5oC

2

Typical Characteristics T

10

VGS = 10V

6.0

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

0 0.25 0.5 0.75 1 1.2

Figure 1.

1.6
ID = 4.8A

V

GS

1.4

1.2

1

NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

4.5

3.5V

VDS, DRAIN- SOURCE VOLTAGE (V)

On Region Characteristics Figure 2.

= 10V

, JUNCTI ON TEMPERATURE (oC)

T

J

= 25°C unless otherwise noted

J

3.0V

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

2.5V

2.8

2.6

VGS = 3.0V

2.4

2.2

2

1.8

1.6

NORMALIZED

1.4

3.5V

4.0V

4.5

6.0V

1.2

1

DRAIN-SOURCE ON-RESISTANCE

10V

0.8
024681

I

, DRAIN CURRENT (A

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

0.102

0.092

0.082

0.072

0.062

0.052

0.042

0.032

DRAIN TO SOURCE ON-RESISTANCE (OHM)

0.022

TJ = 25oC

234567891

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4.

O n - R es i s t a n c e vs G a t e t o

TJ = 125oC

ID = 2.4A

Source Voltage

®

MOSFET

15

VDS = 5V

12

9

6

, DRAIN CURRENT (A)

D

I

3

0

1.522.533.54

V

, GATE TO SOURCE VOLTAGE (V)

GS

TJ = -55oC 25

o

12

Figure 5. Transfer Characteristics

10

VGS = 0V

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.

Figure 6.

TJ = 125oC

25oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

S o u r ce t o D r a i n Di o d e

-55oC

Forward Voltage vs Source Current

FDMB3800N Rev.C1

3

www.fairchildsemi.com