Fairchild FDMB2307NZ service manual

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FDMB2307NZ

Dual Common Drain N-Channel PowerTrench® MOSFET

20 V, 9.7 A, 16.5 mΩ

Features

 Max r  Max r  Max r  Max r

 Low Profile - 0.8 mm maximum - in the new package

Micro

 HBM ESD protection level > 2 kV (Note 3)  RoHS Compliant

= 16.5 mΩ at VGS = 4.5 V, ID = 8 A

S1S2(on)

= 18 mΩ at VGS = 4.2 V, ID = 7.4 A

S1S2(on)

= 21 mΩ at VGS = 3.1 V, ID = 7 A

S1S2(on)

= 24 mΩ at VGS = 2.5 V, ID = 6.7 A

S1S2(on)

FET 2x3 mm

General Description

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench MicroFET Leadframe, the FDMB2307NZ minimizes both PCB space and r

S1S2(on)

Application

 Li-Ion Battery Pack

FDMB2307NZ Dual Common Drain N-Channel PowerTrench

October 2011

process with state of the art

Pin 1

D1/D2

Bottom Top

G1S1S1

S2 S1

G2S2S2

MLP 2x3

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

S1S2

, T

STG

Source1 to Source2 Voltage 20 V Gate to Source Voltage (Note 4) ±12 V Source1 to Source2 Current -Continuous TA = 25°C (Note 1a) 9.7

-Pulsed 40 Power Dissipation TA = 25 °C (Note 1a) 2.2 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

= 25 °C (Note 1b) 0.8

Thermal Characteristics

S1S2

MOSFET

θJA

Thermal Resistance, Junction to Ambient(Dual Operation) (Note 1a) 57 Thermal Resistance, Junction to Ambient(Dual Operation) (Note 1b) 161

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

307 FDMB2307NZ MLP 2x3 7’’ 8 mm 3000 units

°C/W

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FDMB2307NZ Dual Common Drain N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

S1S2

GSS

Zero Gate Voltage Source1 to Source2 Current

Gate to Source Leakage Current VGS = 12 V, V

S1S2

= 16 V, V

S1S2

= 0 V 1 μA

= 0 V 10 μA

On Characteristics

GS(th)

S1S2(on)

Gate to Source Threshold Voltage VGS = V

= 4.5 V, I

= 4.2 V, I

= 3.1 V, I

Static Source1 to Source2 On Resistance

Forward Transconductance V

= 2.5 V, I

= 4.5 V, I

= 125 °C

J S1S2

= 5 V, I

S1S2

, I

= 250 μA0.611.5V

S1S2

= 8 A 10.5 13.5 16.5

S1S2

= 7.4 A 11 14 18

S1S2

= 7 A 11.5 16 21

S1S2

= 6.7 A 12 18 24

S1S2

= 8 A,

S1S2

= 8 A 41 S

S1S2

11 20 29

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 229 345 pF Reverse Transfer Capacitance 211 320 pF

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 19 34 ns Turn-Off Delay Time 32 51 ns Fall Time 9.5 17 ns Total Gate Charge VGS = 0 V to 5 V Total Gate Charge VGS = 0 V to 4.5 V 18 25 nC Gate to Source Charge 2.8 nC Gate to Drain “Miller” Charge 5.3 nC

= 10 V, VGS = 0 V,

S1S2

f = 1 MHz

V V

S1S2 GS

= 10 V, I

= 4.5 V, R

S1S2 GEN

= 8 A,

= 6 Ω

S1S2

= 10 V,

= 8 A

1760 2640 pF

12 22 ns

20 28 nC

mΩ

MOSFET

Source1- Source2 Diode Characteristics

fss

NOTES:

1. R

is determined with the devi ce m ount ed on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

Maximum Continuous Source1-Source2 Diode Forward Current 8 A

Source1 to Source2 Diode Forward Voltage

a. 57 °C/W when mounted on

a 1 in

pad of 2 oz copper

= 0 V, V

G1S 1

= 8 A (Note 2)

fss

G2S2

= 4.5 V,

0.8 1.2 V

is guaranteed by design while R

θJC

b. 161 °C/W when mounted on a minimum pad of 2 oz copper

is determined by

θCA

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FDMB2307NZ Dual Common Drain N-Channel PowerTrench

0.0 0.2 0.4 0.6 0.8

G1S1

= 2.5 V

G1S1

= 4.2 V

G1S1

= 3.1 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX V

G2S2

= 4.5 V

G1S1

= 4.5 V

S1S2

, SOURCE1 TO SOURCE2 CURRENT (A)

S1S2

, SOURCE1 TO SOURCE2 VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8

VGS = 3.1 V

VGS = 2.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 4.2 V

VGS = 4.5 V

S1S2

, SOURCE1 TO SOURCE2 CURRENT (A)

S1S2

, SOURCE1 TO SOURCE2 VOLTAGE (V)

0 10203040

0.5

1.0

1.5

G1S1

= 4.2 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX V

G2S2

= 4.5 V

NORMALIZED

SOURCE1 TO SOURCE2 ON-RESISTANCE

S1S2

, SOURCE1 TO SOURCE2 CURRENT (A)

G1S1

= 2.5 V

G1S1

= 4.5 V

G1S1

= 3.1 V

0 10203040

0.5

1.0

1.5

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

SOURCE1 TO SOURCE2 ON-RESISTANCE

S1S2

, SOURCE1 TO SOURCE2 CURRENT (A)

= 2.5 V

VGS = 4.5 V

VGS = 3.1 V

= 4.2 V

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

S1S2

= 8 A

= 4.5 V

NORMALIZED

SOURCE1 TO SOURCE2 ON-RE SIST A NCE

, JUNCTION TEMPERATURE (

1.01.52.02.53.03.54.04.5

TJ = 150 oC

S1S2

= 8 A

TJ = 25 oC

, GATE TO SOURCE VO L TAGE (V)

S1S2(on)

SOURCE1 TO

SOURCE2 ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25°C unless otherwise noted

On-Region Ch a r a c t e r i s t ics

Figu r e 3 . Nor m a l i zed O n - Resis t a n ce

s Drain Current and Gate Voltage

Figur e 5. Norm aliz ed On Res istance

vs Junction Temperature

MOSFET

vs Drain Current and Gate Voltage

Figure 6.

Figure 4.

Norm a l i zed O n - R e sist a n c e

On Resis tance vs Gat e to

Source Voltage

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FDMB2307NZ Dual Common Drain N-Channel PowerTrench

0.51.01.52.0

TJ = 150 oC

S1S2

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

S1S2

, SOURCE1 TO SOURCE2 CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0 .4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

100

TJ = 25 oC

TJ = -55 oC

TJ = 150 oC

G1S1

= 0 V, V

G2S2

= 4.5 V

fss

, SOURCE1

TO SOURCE2 FORWARD

CURRENT (A)

fss

, BODY DIODE FORWARD VOLTAGE (V)

0481216

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

S1S2

= 0 V

TJ = 25 oC

TJ = 125oC

GATE TO SOURCE VOLTA GE (V)

, GATE LEAKAGE CURRENT (A)

0.01 0.1 1 10 100

0.01

0.1

100

10 ms

10 s

100 ms

1 s

1 ms

S1S2

, SOURCE1 TO SOURCE2 CURRENT (A)

S1S2

, SOURCE1 TO SOURCE2 VOLTAGE (V)

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 161

C/W

= 25

0 5 10 15 20 25

G2S2

= 0 V

S1S2

= 8 A

S1S2

= 12 V

S1S2

= 8 V

G1S1

, GATE1 TO SOURCE1 VOLTAGE (V)

Qg, GATE CHARGE (nC)

S1S2

= 10 V

0.1 1 10 20

100

1000

10000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

S1S2

, SOURCE1 TO SOURCE2 VOLTAGE (V)

rss

oss

iss

Typical Characteristics T

Figure 7.

Transfer Characteristics Figure 8.

= 25°C unless otherwise noted

Forward Voltage vs Source Current

So u r ce1 to So u r ce2 Diod e

Figure 9. Gate Charge Characteristics Fi g u r e 1 0 . C ap a c i t a n c e v s S ou r c e 1

Figure 11.

Gate Leakage Current vs

Gate to Source Voltage

MOSFET

o Source2 Voltage

Figure 12.

Forward Bias Safe

Operating Area

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FDMB2307NZ Dual Common Drain N-Channel PowerTrench

-3

-2

-1

110

100 1000

0.5

100

1000

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE R

θJA

= 161 oC/W

= 25 oC

t, PULSE WIDTH (sec)

-3

-2

-1

110

100 1000

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 161 oC/W

DUTY CYCLE-DESCENDING O R D ER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PU L SE D U R ATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13. Single Pulse Maximum Power Dissipation

= 25°C unless otherwise noted

Figure 14. Junction-to-Ambient Transient Thermal Response Curve

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MOSFET

Dimensional Outline and Pad Layout

FDMB2307NZ Dual Common Drain N-Channel PowerTrench

MOSFET

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TRADEMARKS

™

The following includes registered and unregistered trademarks an d service marks, owned by Fairchi ld Semiconductor and/or it s global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ Auto-SPM™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™

FlashWriter FPS™ F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptiHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™ PowerTrench PowerXS™

Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™

SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise The Right Technology for Your Success™

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

FDMB2307NZ Dual Common Drain N-Channel PowerTrench

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

MOSFET

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when prope rly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. Al l manufactures of semiconductor products are experiencin g counterfeiting of their

parts. Customers who inadvertently purchase counterfei t parts expe rience many problems such as loss of br and repu ta tion, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is ta ki ng stron g measures to prote ct ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild pa rts either di rectly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’ s ful l range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practi ce by buying direct or fr om authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specif ications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchil d Semiconductor. The datasheet is for reference information only.

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Rev. I55

Fairchild FDMB2307NZ service manual

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