Fairchild FDMA910PZ service manual

FDMA910PZ

D

D

S

G

D

D

Pin 1

Drain

Source

MicroFET 2X2 (Bottom View)

5

1

6

2

3

4

D

D

S

D

D

G

Bottom Drain Contact

Single P-Channel PowerTrench® MOSFET

-20 V, -9.4 A, 20 mΩ

Features

 Max r
 Max r
 Max r
 Low Profile - 0.8 mm maximum in the new package MicroFET

2x2 mm

 HBM ESD protection level > 2.8k V typical (Note 3)
 Free from halogenated compounds and antimony oxides
 RoHS Compliant

= 20 mΩ at VGS = -4.5 V, ID = -9.4 A

DS(on)

= 24 mΩ at VGS = -2.5 V, ID = -8.6 A

DS(on)

= 34 mΩ at VGS = -1.8 V, ID = -7.2 A

DS(on)

General Description

This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable
applications.It features a MOSFET with low on-state resistance
and zener diode protection against ESD. The MicroFET 2X2
package offers exceptional thermal performance for its physical
size and is well suited to linear mode applications.

April 2012

FDMA910PZ Single P-Channel PowerTrench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

Thermal Characteristics

R

θJA

R

θJA

Package Marking and Ordering Information

©2012 Fairchild Semiconductor Corporation
FDMA910PZ Rev.C2

Device Marking Device Package Reel Size Tape Width Quantity

= 25 °C unless otherwise noted

A

Drain to Source Voltage -20 V
Gate to Source Voltage ±8 V

-Continuous TA = 25°C (Note 1a) -9.4

-Pulsed -45
Power Dissipation TA = 25°C (Note 1a) 2.4
Power Dissipation T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Ambient (Note 1a) 52
Thermal Resistance, Junction to Ambient (Note 1b) 145

910 FDMA910PZ MicroFET 2X2 7” 12mm 3000 units

= 25°C (Note 1b) 0.9

A

1

A

W

°C/W

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Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -20 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = -16 V, V
Gate to Source Leakage Current VGS = ±8 V, V

I

= -250 μA, referenced to 25 °C -12 mV/°C

D

= 0 V -1 μA

GS

= 0 V ±1 μA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -0.4 -0.5 -1.5 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= -250 μA, referenced to 25 °C 3 mV/°C

D

= -4.5 V, ID = -9.4 A 16 20

V

GS

V

= -2.5 V, ID = -8.6 A 19 24

GS

= -1.8 V, ID = -7.2 A 24 34

V

GS

= -4.5 V, ID = -9.4 A,

V

GS

T

= 125 °C

J

20 25

Forward Transconductance VDD = -5 V, ID = -9.4 A 52 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 414 620 pF
Reverse Transfer Capacitance 388 580 pF

= -10 V, VGS = 0 V,

V

DS

f = 1 MHz

2110 2805 pF

mΩ

FDMA910PZ Single P-Channel PowerTrench

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Rise Time 19 34 ns
Turn-Off Delay Time 135 216 ns
Fall Time 103 165 ns
Total Gate Charge
Gate to Source Charge 2.5 nC
Gate to Drain “Miller” Charge 6 nC

V

= -10 V, ID = -9.4 A,

DD

V

= -4.5 V, R

GS

V

= -4.5 V, VDD = -10 V,

GS

I

= -9.4 A

D

GEN

Drain-Source Diode Characteristics

V

= 0 V, IS = -2 A (Note 2) -0.6 -1.2 V

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mou nted o n a 1 i n2 pad 2 oz copper pad on a 1.5 x 1.5 in. bo ard of FR-4 m ateri al. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 6.3 13 nC

a. 52 °C/W when mounted

2

on a 1 in

pad of 2 oz copper.

GS

= 0 V, IS = -9.4 A (Note 2) -0.8 -1.2 V

V

GS

= -9.4 A, di/dt = 100 A/μs

I

F

= 6 Ω

9.4 19 ns

21 29 nC

23 37 ns

is guaranteed by design while R

θJC

b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.

is determined by

θJA

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

©2012 Fairchild Semiconductor Corporation
FDMA910PZ Rev.C2

2

www.fairchildsemi.com

FDMA910PZ Single P-Channel PowerTrench

0.0 0.5 1.0 1.5 2.0

0

15

30

45

VGS = -1.5 V

VGS = -4.5 V

VGS = -2.5 V

VGS = -1.8 V

VGS = -3.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

-I

D

, DRAIN CURRENT (A)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

0153045

0

1

2

3

VGS = -2.5 V

VGS = -1.8 V

VGS = -3.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-I

D

, DRAIN CURRENT (A)

VGS = -4.5 V

VGS = -1.5 V

-75 -50 -25 0 25 50 75 100 125 150

0.8

0.9

1.0

1.1

1.2

1.3

1.4

ID = -9.4 A
V

GS

= -4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERA TUR E (

o

C)

1.01.52.02.53.03.54.04.5

0

15

30

45

60

TJ = 125 oC

ID = -9.4 A

TJ = 25 oC

-VGS, GATE TO SOURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0.5 1.0 1 .5 2.0

0

15

30

45

TJ = 25 oC

V

DS

= -5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 150 oC

-I

D

, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

-I

S

, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norm a l i z e d O n-Resist a n c e

vs Drain Current and Gate Voltage

®

MOSFET

Fig u r e 3. N o r maliz e d On- Re s i stanc e

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation
FDMA910PZ Rev.C2

Figure 5. Transfer Characteristics

Figure 4.

On-Re sistance vs Gate to

Source Voltage

Figure 6.

Sou rce to Drain Diode

Forward Voltage vs Source Current

3

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