Fairchild FDMA905P service manual
FDMA905P
5
1
6
2
3
4
D
D
S
D
D
G
Bottom Drain Contact
D
D
S
G
D
D
Pin 1
Drain
Source
MicroFET 2X2 (Bottom View)
Single P-Channel PowerTrench® MOSFET
-12 V, -10 A, 16 mΩ
FDMA905P Single P-Channel PowerTrench
October 2011
Features
Max r
Max r
Max r
Low profile - 0.8 mm maximum - in the new package
MicroFET 2X2 mm
Free from halogenated compounds and antimony oxides
RoHS Compliant
= 16 mΩ at VGS = -4.5 V, ID = -10 A
DS(on)
= 21 mΩ at VGS = -2.5 V, ID = -8.9 A
DS(on)
= 82 mΩ at VGS = -1.8 V, ID = -4.5 A
DS(on)
General Description
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable
applications. It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
θJA
R
θJA
Package Marking and Ordering Information
©2011 Fairchild Semiconductor Corporation
FDMA905P Rev.C1
Device Marking Device Package Reel Size Tape Width Quantity
Drain to Source Voltage -12 V
Gate to Source Voltage ±8 V
Drain Current -Continuous (Note 1a) -10
-Pulsed -40
Power Dissipation (Note 1a) 2.4
Power Dissipation (Note 1b) 0.9
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case 6.9
Thermal Resistance, Junction to Ambient (Note 1a) 52
Thermal Resistance, Junction to Ambient (Note 1b) 145
A95 FDMA905P MicroFET 2X2 7 ’’ 8 mm 3000 units
= 25°C unless otherwise noted
A
A
W
°C/WR
1
www.fairchildsemi.com
FDMA905P Single P-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0V -12 V
Breakdown Voltage Temperature
Coefficient
I
= -250 μA, referenced to 25 °C -4.3 mV/°C
D
Zero Gate Voltage Drain Current VDS = -9.6 V, VGS = 0 V -1 μA
Gate to Source Leakage Current VGS = ±8 V, V
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -0.4 -0.7 -1.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= -250 μA, referenced to 25 °C 2.6 mV/°C
D
= -4.5 V, ID = -10 A 14 16
V
GS
V
= -2.5 V, ID = -8.9 A 17 21
GS
= -1.8 V, ID = -4.5 A 21 82
V
GS
= -4.5 V , ID = -10 A, TJ = 125 °C 16 21
V
GS
Forward Transconductance VDD = -5 V, ID = -10 A 50 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 490 735 pF
Reverse Transfer Capacitance 437 655 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Rise Time 11 20 ns
Turn-Off Delay Time 120 192 ns
Fall Time 59 94 ns
Total Gate Charge
Gate to Source Charge 3.5 nC
Gate to Drain “Miller” Charge 4.2 nC
= -6 V, VGS = 0 V,
V
DS
f = 1 MHz
= -6 V, ID = -10 A,
V
DD
V
= -4.5 V, R
GS
= -6 V, ID = -10 A,
V
DD
V
= -4.5 V
GS
GEN
= 6 Ω
2559 3405 pF
11 20 ns
21 29 nC
mΩ
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the devi ce m ount ed on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
.
©2011 Fairchild Semiconductor Corporation
FDMA905P Rev.C1
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 6.1 12 nC
V
GS
V
GS
= -10 A, di/dt = 100 A/μs
I
F
a. 52 °C/W when mounted on
2
a 1 in
pad of 2 oz copper.
= 0 V , IS = -2 A (Note 2) -0.6 -1.2
= 0 V , IS = -10 A (Note 2) -0.8 -1.2
21 34 ns
is guaranteed by design while R
θJC
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
2
θCA
www.fairchildsemi.com
V
is determined by
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