Fairchild FDMA7628 service manual

Pin 1

Drain

Source

MicroFET 2X2 (Bottom View)

Bottom Drain Contact

FDMA7628

Single N-Channel 1.5 V Specified PowerTrench® MOSFET

20 V, 9.4 A, 14.5 mΩ

Features

 Max r  Max r  Max r  Max r  Low Profile-0.8 mm maximum in the new package MicroFET

2x2 mm  RoHS Compliant

= 14.5 mΩ at VGS = 4.5 V, ID = 9.4 A

DS(on)

= 18.2 mΩ at VGS = 2.5 V, ID = 8.3 A

DS(on)

= 23.3 mΩ at VGS = 1.8 V, ID = 7.3 A

DS(on)

= 32.3 mΩ at VGS = 1.5 V, ID = 6.2 A

DS(on)

General Description

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench optimize the r leadframe.

DS(ON)

@ V

= 1.5 V on special MicroFET

Applications

 Li-lon Battery Pack  DC-DC Buck Converters

May 2012

process to

FDMA7628 Single N-Channel 1.5 V Specified PowerTrench

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Thermal Characteristics

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

Drain to Source Voltage 20 V Gate to Source Voltage ±8 V

-Continuous TA = 25 °C (Note 1a) 9.4

-Pulsed 54 Power Dissipation TA = 25 °C (Note 1a) 1.9 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Ambient (Note 1a) 65 Thermal Resistance, Junction to Ambient (Note 1b) 180

104 FDMA7628 MicroFET 2X2 7 ’’ 12 mm 3000 units

= 25 °C unless otherwise noted

= 25 °C (Note 1b) 0.7

MOSFET

°C/W

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FDMA7628 Single N-Channel 1.5 V Specified PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 20 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 16 V, V Gate to Source Leakage Current VGS = ±8 V, V

= 250 μA, referenced to 25 °C 15 mV/°C

= 0 V 1 μA

= 0 V ±100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 0.4 0.6 1.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C -3 mV/°C

= 4.5 V, ID = 9.4 A 11.3 14.5

= 2.5 V, ID = 8.3 A 12.7 18.2

= 1.8 V, ID = 7.3 A 15.0 23.3

= 1.5 V, ID = 6.2 A 18.3 32.3

= 4.5 V, ID = 9.4 A,

= 125 °C

14.7 18.3

Forward Transconductance VDD = 5 V, ID = 9.4 A 56 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 180 240 pF Reverse Transfer Capacitance 122 185 pF Gate Resistance 1.9 Ω

Switching Characteristics

d(on)

d(off)

Q Q

gs gd

Turn-On Delay Time Rise Time 611ns Turn-Off Delay Time 37 58 ns Fall Time 611ns Total Gate Charge V Total Gate Charge V Total Gate Charge V Total Gate Charge V Gate to Source Charge 1.7 nC Gate to Drain “Miller” Charge 2.7 nC

= 10 V, VGS = 0 V,

f = 1 MHz

= 10 V, ID = 9.4 A,

= 4.5 V, R

= 0 V to 4.5 V

= 0 V to 2.5 V 10.0 nC

= 0 V to 1.8 V 7.4 nC

= 0 V to 1.5 V 6.2 nC

GEN

= 6 Ω

= 9.4 A

= 10 V,

1260 1680 pF

917ns

17.5 nC

mΩ

MOSFET

Drain-Source Diode Characteristics

Maximum Continuous Drain-Source Diode Forward Current 2.0 A Source to Drain Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge 5 10 nC

= 0 V, IS = 2.0 A (Note 2) 0.63 1.2 V

= 9.4 A, di/dt = 100 A/μs

16 29 ns

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NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in . board of FR-4 m ater ial. R

θJA

the user's board design.

a.65 °C/W when mounted

on a 1 in

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

pad of 2 oz copper.

is guaranteed by design while R

θJC

b. 180 °C/W when mounted on a minimum pad of 2 oz copper.

is determined by

θJA

FDMA7628 Single N-Channel 1.5 V Specified PowerTrench

MOSFET

www.fairchildsemi.com

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