Fairchild FDMA530PZ service manual
FDMA530PZ
Single P-Channel PowerTrench® MOSFET
–30V, –6.8A, 35mΩ
Features
Max r
Max r
Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
HBM ESD protection level > 3k V typical (Note 3)
Free from halogenated compounds and antimony oxides
RoHS Compliant
= 35mΩ at VGS = –10V, ID = –6.8A
DS(on)
= 65mΩ at VGS = –4.5V, ID = –5.0A
DS(on)
General Description
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable
applications . It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal
formance for its physical size and is well suited to linear mode
per
applications.
tm
June
FDMA530PZ Single P-Channel PowerTrench
2011
®
MOSFET
Pin 1
Drain
D
D
D
G
D
Bottom Drain Contact
1
Source
D
2
D
3
G
6
D
5
D
4
S
S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage –30 V
Gate to Source Voltage ±25 V
Drain Current -Continuous (Note 1a) –6.8
-Pulsed –24
Power Dissipation (Note 1a) 2.4
Power Dissipation (Note 1b) 0.9
Operating and Storage Junction Temperature Range –55 to +150 °C
= 25°C unless otherwise noted
A
Thermal Characteristics
A
W
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 52
Thermal Resistance, Junction to Ambient (Note 1b) 145
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
530 FDMA530PZ MicroFET 2X2 7’’ 8mm 3000 units
©2011 Fairchild Semiconductor Corporation
FDMA530PZ Rev.C1
°C/W
1
www.fairchildsemi.com
FDMA530PZ Single P-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
ΔV
GS(th)
ΔT
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = –250μA, VGS = 0V –30 V
Breakdown Voltage Temperature
Coefficient
I
= –250μA, referenced to 25°C –23 mV/°C
D
Zero Gate Voltage Drain Current VDS = –24V, VGS = 0V -1 μA
Gate to Source Leakage Current VGS = ±25V, V
= 0V ±10 μA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = –250μA –1 –2.1 –3 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = –10V, ID = –6.8A 17 S
= –250μA, referenced to 25°C 5.4 mV/°C
I
D
V
= –10V, ID = –6.8A 30 35
GS
= –4.5V, ID = –5.0A 52 65
GS
= –10V, ID = –6.8A ,TJ = 125°C 43 63
V
GS
Dynamic Characteristics
C
iss
C
oss
C
rss
Gate Resistance
Rg
Input Capacitance
Output Capacitance 155 210 pF
Reverse Transfer Capacitance 130 195 pF
V
= –15V, VGS = 0V,
DS
f = 1MHz
805 1070 pF
1 18 38
mΩV
®
MOSFET
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 21 34 ns
Turn-Off Delay Time 43 69 ns
VDD = –15V, ID = –6.8A
= –10V, R
V
GS
GEN
= 6Ω
Fall Time 31 50 ns
g
g
gs
gd
Total Gate Charge V
Total Gate Charge V
Gate to Source Gate Charge 3.1 nC
Gate to Drain “Miller” Charge 4.5 nC
= –10V
GS
= –5V 9 11 nC
GS
VDD = –15V
= –6.8A
I
D
6 12 ns
16 24 nC
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Notes:
1: R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
Maximum Continuous Drain-Source Diode Forward Current –2 A
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 19 29 nC
a. 52°C/W when mounted on
2
pa d o f 2 oz co pp er
a 1 in
= 0V, IS = –2A –0.8 –1.2 V
GS
= –6.8A, di/dt = 100A/μs
I
F
b.145°C/W when mounted on a
minimum pad of 2 oz copper
24 36 ns
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3: The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied.
FDMA530PZ Rev.C1
2
www.fairchildsemi.com
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