Fairchild FDMA520PZ service manual

April 2009

FDMA520PZ Single P-Channel PowerTrench

FDMA520PZ

Single P-Channel PowerTrench® MOSFET

–20V, –7.3A, 30m:
Features

 Max r

 Max r

 Low profile - 0.8mm maximum - in the new package MicroFET

2X2 mm



HBM ESD protection level > 3k V typical (Note 3)

 Free from halogenated compounds and antimony oxides

 RoHS Compliant

= 30m: at VGS = –4.5V, ID = –7.3A

DS(on)

= 53m: at VGS = –2.5V, ID = –5.5A

DS(on)

Pin 1

D

Drain

G

D

Source

General Description

This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.

The MicroFET 2X2 package offers exceptional thermal

rmance for its physical size and is well suited to linear mo

perfo
applications.

D

D

Bottom Drain Contact

1

2

tm

de

®

MOSFET

6

D

5

D

3

G

D

S

D

4

S

MicroFET 2X2 (Bottom View)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage –20 V

Gate to Source Voltage ±12 V

Drain Current -Continuous (Note 1a) –7.3

-Pulsed –24

Power Dissipation (Note 1a) 2.4

Power Dissipation (Note 1b) 0.9

Operating and Storage Junction Temperature Range –55 to +150 °C

= 25°C unless otherwise noted

A

Thermal Characteristics

R

TJA

R

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 52

Thermal Resistance, Junction to Ambient (Note 1b) 145

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

520 FDMA520PZ MicroFET 2X2 7’’ 8mm 3000 units

A

W

°C/W

©2009 Fairchild Semiconductor Corporation
FDMA520PZ Rev.B2

1

www.fairchildsemi.com

FDMA520PZ Single P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV
'T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = –250PA, VGS = 0V –20 V

Breakdown Voltage Temperature
Coefficient

I

= –250PA, referenced to 25°C –8.4 mV/°C

D

Zero Gate Voltage Drain Current VDS = –16V, VGS = 0V –1 PA

Gate to Source Leakage Current VGS = ±12V, V

= 0V ±10 PA

DS

On Characteristics

V

GS(th)

'V
'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = –250PA –0.6 –1.1 –1.5 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

= –250PA, referenced to 25°C 3.5 mV/°C

I

D

V

= –4.5V, ID = –7.3A 26 30

GS

= –2.5V, ID = –5.5A 42 53

GS

= –4.5V, ID = –7.3A ,TJ = 125°C 36 55

V

GS

Forward Transconductance VDS = –5V, ID = –7.3A 22 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance 255 340 pF

Reverse Transfer Capacitance 225 340 pF

V

= –10V, VGS = 0V,

DS

f = 1MHz

1235 1645 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

Turn-On Delay Time

Rise Time 29 47 ns

Turn-Off Delay Time 83 133 ns

VDD = –10V, ID = –7.3A

= –4.5V, R

V

GS

GEN

= 6:

Fall Time 74 119 ns

g

gs

gd

Total Gate Charge

Gate to Source Gate Charge 2.9 nC

Gate to Drain “Miller” Charge 4.4 nC

V

= –5V, ID = –7.3A

DD

= –4.5V

V

GS

10 20 ns

14 20 nC

m:V

®

MOSFET

Drain-Source Diode Characteristics

I

S

V

SD

t

rr

Q

rr

Notes:

1: R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

TJA

2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3: The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied.

FDMA520PZ Rev.B2

Maximum Continuous Drain-Source Diode Forward Current –2 A

Source to Drain Diode Forward Voltage VGS= 0V, IS= –2A –0.8 –1.2 V

Reverse Recovery Time

Reverse Recovery Charge 22 33 nC

a. 52°C/W when mounted on

2

pad of 2 oz copper

a 1 in

=–7.3A, di/dt = 100A/Ps

I

F

2

b.145°C/W when mounted on a
minimum pad of 2 oz copper

30 45 ns

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