Fairchild FDMA510PZ service manual

April 2009

FDMA510PZ Single P-Channel PowerTrench

FDMA510PZ

Single P-Channel PowerTrench® MOSFET

–20V, –7.8A, 30m:

Features

 Max r

 Max r

 Max r

 Max r

 Low profile - 0.8mm maximum - in the new package MicroFET

2X2 mm

 HBM ESD protection level > 3KV typical (Note 3)

 Free from halogenated compounds and antimony oxides

 RoHS Compliant

= 30m: at VGS = –4.5V, ID = –7.8A

DS(on)

= 37m: at VGS = –2.5V, ID = –6.6A

DS(on)

= 50m: at VGS = –1.8V, ID = –5.5A

DS(on)

= 90m: at VGS = –1.5V, ID = –2.0A

DS(on)

Pin 1

Drain

D

G

D

Source

General Description

This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.

The MicroFET 2X2 package offers exceptional thermal

rmance for

perfo
applications.

D

its physical size and is well suited to linear mode

Bottom Drain Contact

1

D

6

tm

®

MOSFET

D

2

3

G

D

MicroFET 2X2 (Bottom View)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage –20 V

Gate to Source Voltage ±8 V

Drain Current -Continuous (Note 1a) –7.8

-Pulsed –24

Power Dissipation (Note 1a) 2.4

Power Dissipation (Note 1b) 0.9

Operating and Storage Junction Temperature Range –55 to +150 °C

S

D

= 25°C unless otherwise noted

A

5

D

4

S

Thermal Characteristics

R

TJA

R

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 52

Thermal Resistance, Junction to Ambient (Note 1b) 145

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

510 FDMA510PZ MicroFET 2X2 7’’ 8mm 3000units

A

W

°C/W

©2009 Fairchild Semiconductor Corporation
FDMA510PZ Rev.B2

1

www.fairchildsemi.com

FDMA510PZ Single P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV
'T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = –250PA, VGS = 0V –20 V

Breakdown Voltage Temperature
Coefficient

I

= –250PA, referenced to 25°C –13 mV/°C

D

Zero Gate Voltage Drain Current VDS = –16V, VGS = 0V –1 PA

Gate to Source Leakage Current VGS = ±8V, VDS= 0V ±10 PA

On Characteristics

V

GS(th)

'V
'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = –250PA –0.4 –0.7 –1.5 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

I

= –250PA, referenced to 25°C 3 mV/°C

D

V

= –4.5V, ID = –7.8A 27 30

GS

= –2.5V, ID = –6.6A 34 37

V

GS

= –1.8V, ID = –5.5A 46 50

V

GS

= –1.5V, ID = –2.0A 60 90

V

GS

= –4.5V, ID = –7.8A ,TJ = 125°C 36 40

V

GS

Forward Transconductance VDD = –5V, ID = –7.8A 26 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance 205 275 pF

Reverse Transfer Capacitance 185 280 pF

= –10V, VGS = 0V,

V

DS

f = 1MHz

1110 1480 pF

m:

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Rise Time 918ns

Turn-Off Delay Time 125 200 ns

VDD = –10V, ID = –7.8A

= –4.5V, R

V

GS

GEN

= 6:

Fall Time 64 103 ns

Total Gate Charge

Gate to Source Charge 2.1 nC

Gate to Drain “Miller” Charge 4.2 nC

= –5V, ID = –7.8A

V

DD

V

= –4.5V

GS

Drain-Source Diode Characteristics

I

S

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1. 5 x 1.5 in. board of FR-4 m aterial. R

TJA

the user's board design.

Maximum Continuous Drain-Source Diode Forward Current –2 A

Source to Drain Diode Forward Voltage VGS= 0V, IS= –2A –0.8 –1.2 V

Reverse Recovery Time

Reverse Recovery Charge 44 71 nC

a. 52°C/W when mounted on
a 1 in2pad of 2 oz copper.

= –7.8A, di/dt = 100A/Ps

I

F

714ns

19 27 nC

66 106 ns

is guaranteed by design while R

TJC

b. 145°C/W when mounted on a
minimum pad of 2 oz copper.

is determined by

TCA

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

©2009 Fairchild Semiconductor Corporation

0PZ Rev.B2

FDMA51

2

www.fa

irchildsemi.com

FDMA510PZ Single P-Channel PowerTrench

Typical Characteristics T

24

VGS = -4.5V

20

16

12

8

, DRAIN CURRENT (A)

D

-I

4

0

01234

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 1.

On-Region Characteristics Figure 2.

1.6

ID = -7.8A
V

= -4.5V

GS

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (

J

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

VGS = -2.5V

VGS = -2V

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

= 25°C unless otherwise noted

J

VGS = -1.8V

VGS = -1.5V

o

C)

2.5

V

=-1.5V

GS

VGS = -1.8V

2.0

VGS = -2V

= -2.5V

NORMALIZED

1.5

V

GS

1.0

V

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

DRAIN TO SOURCE ON-RESISTANCE

0.5
04812162024

-I

, DRAIN CURRENT(A)

D

GS

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

200

(m:)

150

100

DRAIN TO

,

DS(on)

r

50

SOURCE ON-RESISTANCE

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

-V

GS

Figure 4.

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

ID= -7.8A

TJ= 125oC

TJ= 25oC

, GATE TO SOURCE VOLTAGE (V)

Source Voltage

=-4.5V

®

MOSFET

24

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

20

V

= -5V

DD

16

12

8

, DRAIN CURRENT (A)

D

-I

4

0

0.0 0.5 1.0 1.5 2.0 2.5

TJ = -55oC

TJ = 25oC

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

©2009 Fairchild Semiconductor Corporation

0PZ Rev.B2

FDMA51

TJ= 150oC

10

10

V

= 0V

GS

1

TJ= 150oC

0.1

TJ = 25oC

0.01

, REVERSE DRAIN CURRENT (A)

S

-I

1E-3

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55oC

Forward Voltage vs Source Current

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