Fairchild FDMA507PZ service manual

FDMA507PZ

Single P-Channel PowerTrench® MOSFET

-20 V, -7.8 A, 24 mΩ
Features

 Max r
 Max r
 Max r
 Max r
 Low Profile - 0.8 mm maximum - in the package MicroFET

2X2 mm

 HBM ESD protection level > 3.2K V typical (Note3)
 Free from halogenated compounds and antimony oxides
 RoHS Compliant

= 24 mΩ at VGS = -5 V, ID = -7.8 A

DS(on)

= 25 mΩ at VGS = -4.5 V, ID = -7 A

DS(on)

= 35 mΩ at VGS = -2.5 V, ID = -5.5 A

DS(on)

= 45 mΩ at VGS = -1.8 V, ID = -4 A

DS(on)

General Description

This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-stade resistance.

The MicroFET 2X2 package offers exceptional thermal
perfomance for its physical size and is well suited to linear mode
applications.

FDMA507PZ Single P-Channel PowerTrench

May 2010

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Thermal Characteristics

R

θJA

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2010 Fairchild Semiconductor Corporation
FDMA507PZ Rev.C

Drain to Source Voltage -20 V
Gate to Source Voltage ±8 V
Drain Current -Continuous TA = 25 °C (Note 1a) -7.8

-Pulsed -24
Power Dissipation TA = 25 °C (Note 1a) 2.4
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Ambient (Note 1a) 52
Thermal Resistance, Junction to Ambient (Note 1b) 145

507 FDMA507PZ MicroFET 2X2 7 ’’ 12 mm 3000 units

= 25 °C unless otherwise noted

A

= 25 °C (Note 1b) 0.9

A

1

A

W

°C/W

www.fairchildsemi.com

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆BV
∆T

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -20 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = -16 V, V
Gate to Source Leakage Current VGS = ±8 V, V

I

= -250 µA, referenced to 25 °C -12 mV/°C

D

= 0 V -1 µA

GS

= 0 V ±10 µA

DS

On Characteristics

V

GS(th)

∆V
∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA -0.4 -0.5 -1.5 V
Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

I

= -250 µA, referenced to 25 °C 3 mV/°C

D

= -5 V, ID = -7.8 A 19 24

V

GS

V

= -4.5 V, ID = -7 A 20 25

GS

= -2.5 V, ID = -5.5 A 24 35

V

GS

= -1.8 V, ID = -4 A 29 45

V

GS

= -5 V, ID = -7.8 A, TJ = 125 °C 26 34

V

GS

Forward Transconductance VDS = -5 V, ID = -7.8 A 33 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 265 355 pF
Reverse Transfer Capacitance 240 360 pF

= -10 V, VGS = 0 V,

V

DS

f = 1 MHz

1515 2015 pF

FDMA507PZ Single P-Channel PowerTrench

mΩ

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 14 25 ns
Turn-Off Delay Time 192 307 ns
Fall Time 96 154 ns
Total Gate Charge
Gate to Source Gate Charge 2 nC
Gate to Drain “Miller” Charge 7.5 nC

VDD = -10 V, ID = -7.8 A
V

= -5 V, R

GS

= -10 V, ID = -7.8 A

V

DD

V

= -5 V

GS

GEN

= 6 Ω

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. bo ard of FR-4 ma terial. R

1. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 44 70 nC

a. 52 °C/W when mounted on

2

a 1 in

pad of 2 oz copper.

= 0 V, IS = -2.0 A (Note 2) -0.6 -1.2 V

GS

= -7.8 A, di/dt = 100 A/µs

I

F

6.4 13 ns

30 42 nC

66 106 ns

is guaranteed by design while R

θJC

b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.

is determined by

θCA

2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

©2010 Fairchild Semiconductor Corporation
FDMA507PZ Rev.C

2

www.fairchildsemi.com

Typical Characteristics T

= 25 °C unless otherwise noted

J

FDMA507PZ Single P-Channel PowerTrench

24

VGS = -5 V
VGS = -4.5 V

20

VGS = -3 V
VGS = -2.5 V

16

12

VGS = -1.8 V

8

, DRAIN CURRENT (A)

D

4

-I

0

0 0.2 0.4 0.6 0.8 1.0

-VDS, DRAIN TO SOURCE VOLTA GE (V)

Figure 1.

1.6

1.4

On Region Characteristics Figure 2.

ID = -7.8 A

= -5 V

V

GS

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

1.2

1.0

NORMALIZED

0.8

0.6

DRAIN TO SOURCE ON-RESISTANCE

-75 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

Fi gure 3. Normali ze d O n R es istance

vs Junction Temperature

2.5

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5%MAX

2.0

VGS = -1.8 V

1.5

NORMALIZED

V

GS

= -2.5 V

1.0

V

VGS = -3 V

DRAIN TO SOURCE ON-RESISTANCE

0.5
0 4 8 12162024

-ID, DRAIN CURRENT(A)

V

= -4.5 V

GS

GS

= -5 V

Nor ma liz ed O n- Res istan ce

vs Drain Current and Gate Voltage

160

ID = - 7.8 A

(mΩ)

120

80

, DRAIN TO

40

DS(on)

r

o

T

= 25

C

J

SOURCE ON-RESISTANCE

0

12345

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4.

On-Resistan ce vs Gate to

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

TJ = 125 oC

Source Voltage

®

MOSFET

24

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

20

V

= -5 V

DS

16

12

8

, DRAIN CURRENT (A)

D

4

-I

0

0 0.5 1.0 1.5 2.0

TJ = 150 oC

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

©2010 Fairchild Semiconductor Corporation
FDMA507PZ Rev.C

TJ = 25 oC

TJ = -55 oC

20

V

= 0 V

GS

TJ = 150 oC

1

TJ = 25 oC

TJ = -55 oC

0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Diode

, REVERSE DRAIN CURRENT (A)

S

-I

10

0.1

0.01

0.001

Forward Voltage vs Source Current

3

www.fairchildsemi.com