Fairchild FDMA430NZ service manual

August 2009

FDMA430NZ Single N-Channel 2.5V Specified PowerTrench

FDMA430NZ

Single N-Channel 2.5V Specified PowerTrench® MOSFET

30V, 5.0A, 40m:

General Description

This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process
to optimize the R
leadframe.

(on) @VGS=2.5V on special MicroFET

DS

Applications

 Li-lon Battery Pack

Pin 1

Drain

D

G

D

Source

Features

 R

 R

 Low Profile-0.8mm maximum-in the new package



 Free from halogenated compounds and antimony oxides



= 40m: @ V

DS(on)

= 50m:@ V

DS(on)

MicroFET 2x2 mm

HBM ESD protection level > 2.5k V typical (Note 3)

RoHS Compliant

= 4.5 V, ID = 5.0A

GS

= 2.5 V, ID = 4.5A

GS

S

5

D

tm

G

34

D

2

®

MOSFET

6

D

D

S

D

Bottom Drain Contact

1

MicroFET 2X2 (Bottom View)

Absolute Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

, T

T

J

STG

Drain-Source Voltage 30 V

Gate-Source Voltage r12 V

Drain Current -Continuous (Note 1a)

-Pulsed

Power dissipation (Steady State) (Note 1a)
(Note 1b)

Operating and Storage Junction Temperature Range -55 to +150

= 25°C unless otherwise noted

A

5.0

20

2.4

0.9

Thermal Characteristics

R

TJA

R

TJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 52

Thermal Resistance, Junction-to-Ambient (Note 1b) 145

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

430 FDMA430NZ 7” 12mm 3000 units

D

o

C/W

A

W

o

C

©2009 Fairchild Semiconductor Corporation
FDMA430NZ Rev B4

1

www.fairchildsemi.com

FDMA430NZ Single N-Channel 2.5V specified PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

VDSS

'B

VDSS

'T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

'V

GS(th)

'T

J

R

DS(ON)

g

FS

Drain-Source Breakdown Voltage VGS = 0V , ID = 250PA 30 V

Breakdown Voltage Temperature
Coefficient

ID = 250PA,
Referenced to 25°C

25.2 mV/°C

Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V, 1 PA

Gate-Body Leakage, VGS = r12V, VDS = 0V r10 PA

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = 250PA 0.6 0.81 1.5 V

Gate Threshold Voltage
Temperature Coefficient

Static Drain-Source On-Resistance

Forward Transconductance VDS = 5V, ID =5.0A 25.6 S

ID = 250PA,
Referenced to 25°C

V

= 4.5V, ID = 5.0A 23.6 40

GS

= 4.0V, ID = 5.0A 23.9 41

V

GS

= 3.1V, ID =4.5A 25.4 43

V

GS

= 2.5V, ID =4.5A 27.6 50

V

GS

= 4.5V, ID =5.0 A,

V

GS

=150°C

T

J

-3.2 mV/°C

37.0 61

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Input Capacitance

Output Capacitance 110 150 pF

V

= 10V, VGS =0V,

DS

f = 1.0MHz

600 800 pF

Reverse Transfer Capacitance 75 115 pF

Gate Resistance f = 1.0MHz 3.5 :

Switching Characteristics (Note 2)

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time 7.1 15 ns

Turn-Off Delay Time 18.1 37 ns

= 10V, ID = 1A

V

DD

= 4.5V, R

V

GS

GEN

= 6:

8.3 17 ns

Turn-Off Fall Time 6.0 12 ns

Total Gate Charge

Gate-Source Charge 0.8 2 nC

Gate-Drain Charge 1.9 3 nC

= 10V, ID = 5.0A,

V

DS

= 4.5V

V

GS

7.3 11 nC

m:

®

MOSFET

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

t

rr

Q

rr

Notes:

1. R

TJA

mounting surface of the drain pins.

lse T

2. Pu

3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied.

FDMA430NZ Rev B4 www.fairchildsemi.com2

Maximum Continuous Drain-Source Diode Forward Current 2.0 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 2.0A 0.69 1.2 V

Diode Reverse Recovery Time

Diode Reverse Recovery Charge 5 nC

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder

a. 52 °C/W when mounted

est: Pulse Width < 300 Ps, Duty Cycle < 2.0%

on a 1 in

2

= 5.0A,

I

F

di/dt = 100A/Ps

pad of 2 oz copper.

b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.

17 ns

FDMA430NZ Single N-Channel 2.5V specified PowerTrench

Typical Characteristics T

40

VGS = 4.5V

30

VGS = 3.0V

20

10

, DRAIN CURRENT(A)

D

I

0

01234

VDS, DRAIN TO SOURCE VOLTAGE(V)

Figure 1.

On Region Characteristics Figure 2.

1.6

ID = 5.0A

V

GS

= 4.5V

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-80 -40 0 40 80 120 160

TJ,JUNCTION TEMPERATURE(OC)

PULSE DURATION=300PS

DUTY CYCLE=2.0% MAX

= 25°C unless otherwise noted

J

VGS = 2.5V

VGS = 2.0V

VGS = 1.5V

1.8

1.7

1.6

1.5

1.4

1.3

1.2

VGS= 2.0V

2.5V

3.0V

3.5V

1.1

ON-RESISTANCE

1.0

0.9

0.8

NORMOLIZED DRAIN to SOURCE

5 10152025303540

ID, DRAIN CURRENT(A)

On-Resistance vs Drain Current and

Gate Voltage

0.08

0.07

0.06

0.05

0.04

, DRAIN TO SOURCE

0.03

DS(on)

ON-RESISTANCE (OHM)

R

0.02

TJ = 25oC

12345

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 300Ps
DUTY CYCLE = 2.0% MAX

I

= 2.5A

D

TJ = 125oC

4.5V

®

MOSFET

Figure 3. Normalized

On Resistance vs Junction

Temperature

30

PULSE DURATION = 300Ps
DUTY CYCLE = 2.0% MAX

25

V

= 5V

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

0.5 1.0 1.5 2.0 2.5

FDMA430NZ Rev B4 www.fairchildsemi.com3

DS

o

T

= 125

C

J

T

= -55

J

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5.

Transfer Characteristics Figure 6.

o

T

= 25

C

J

o

C

Figure 4.

On-Resistance vs Gate to Source

Votlage

100

V

= 0V

GS

10

1

T

J

= 125

o

C

o

T

= 25

J

0.1

0.01

, REVERSE CURRENT(A)

S

1E-3

I

1E-4

0.0 0.2 0.4 0.6 0.8 1.0 1.2

T

= -55

J

VSD, BODY DIODE FORWAD VOLTAGE(V)

Source to Drain Diode Forward

Voltage vs Source Current

C

o

C