Fairchild FDMA420NZ service manual

August 2009

FDMA420NZ Single N-Channel 2.5V Specified PowerTrench

FDMA420NZ

Single N-Channel 2.5V Specified PowerTrench® MOSFET

20V, 5.7A, 30m:

General Description

This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench
process to optimize the R
MicroFET leadframe.

(on) @VGS=2.5V on special

DS

Applications

 Li-lon Battery Pack

Pin 1

Drain

D

G

D

Source

Features

 R

 R

 Low Profile-0.8mm maximum-in the new package



 Free from halogenated compounds and antimony oxides

 RoHS Compliant

= 30m: @ V

DS(on)

= 40m:@ V

DS(on)

MicroFET 2x2 mm

HBM ESD protection level > 2.5k V typical (Note 3)

4

S

5

D

= 4.5 V, ID = 5.7A

GS

= 2.5 V, ID = 5.0A

GS

tm

3

G

®

2

D

MOSFET

6

D

D

S

D

Bottom Drain Contact

MicroFET Bottom View 2X2

Absolute Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

, T

T

J

STG

Drain-Source Voltage 20 V

Gate-Source Voltage r12 V

Drain Current -Continuous (Note 1a)

-Pulsed

Power dissipation (Steady State) (Note 1a)
(Note 1b)

Operating and Storage Junction Temperature Range -55 to +150

= 25°C unless otherwise noted

A

5.7

24

2.4

0.9

Thermal Characteristics

R

TJA

R

TJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 52

Thermal Resistance, Junction-to-Ambient (Note 1b) 145

o

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

420 FDMA420NZ 7” 12mm 3000 units

©2009 Fairchild Semiconductor Corporation
FDMA420NZ Rev B4

1

www.fairchildsemi.com

1

D

A

W

o

C

C/W

FDMA420NZ Single N-Channel 2.5V specified PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

VDSS

'B

VDSS

'T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

'V

GS(th)

'T

J

R

DS(ON)

g

FS

Drain-Source Breakdown Voltage VGS = 0V , ID = 250PA 20 V

Breakdown Voltage Temperature
Coefficient

ID = 250PA,
Referenced to 25°C

12 mV/°C

Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V, 1 PA

Gate-Body Leakage VGS = r12V, VDS = 0V r10 PA

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = 250PA 0.6 0.83 1.5 V

Gate Threshold Voltage
Temperature Coefficient

Static Drain-Source On-Resistance

Forward Transconductance VDS = 5V, ID = 5.7A 28.3 S

ID = 250PA,
Referenced to 25°C

V

= 4.5V, ID = 5.7A 16.8 30

GS

= 4.0V, ID = 5.7A 17.3 31

V

GS

= 3.1V, ID = 5.0A 18.9 33

V

GS

= 2.5V, ID = 5.0A 21.2 40

V

GS

= 4.5V, ID = 5 .7A ,

V

GS

=150°C

T

J

-3.1 mV/°C

24.8 44

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Input Capacitance

Output Capacitance 163 220 pF

Reverse Transfer Capacitance 125 190 pF

V

= 10V, VGS = 0V,

DS

f = 1.0MHz

701 935 pF

Gate Resistance f = 1.0MHz 1.92 :

Switching Characteristics (Note 2)

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time 8.6 18 ns

Turn-Off Delay Time 21.5 43 ns

= 10V, ID = 1A

V

DD

= 4.5V, R

V

GS

GEN

= 6:

9.8 20 ns

Turn-Off Fall Time 8.6 18 ns

Total Gate Charge

Gate-Source Charge 0.9 2 nC

Gate-Drain Charge 2.4 4 nC

= 10V, ID = 5.7A,

V

DS

= 4.5V

V

GS

8.8 12 nC

m:

®

MOSFET

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

t

rr

Q

rr

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the

TJA

drain pins.

2. Pulse Test: Pulse Width < 300 Ps, Duty Cycle < 2.0%.

3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied.

FDMA420NZ Rev B4

Maximum Continuous Drain-Source Diode Forward Current 2.0 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 2.0A 0.69 1.2 V

Diode Reverse Recovery Time

Diode Reverse Recovery Charge 5 nC

a. 52 °C/W when mounted

on a 1 in

= 5.7A,

I

F

di/dt = 100A/Ps

2

pad of 2 oz copper.

b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.

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20 ns

FDMA420NZ Single N-Channel 2.5V specified PowerTrench

Typical Characteristics T

50

45

40

35

30

25

20

15

, DRAIN CURRENT (A)

10

D

I

5

0

01234

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1.

1.6

ID = 5.7A
V

1.4

1.2

GS

= 4.5V

PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX

VGS = 4.5V

VGS = 3.5V

V

= 3.0V

GS

VGS = 1.5V

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

VGS = 2.5V

VGS = 2.0V

NORMALIZED

2.1

PULSE DURATION = 300PS
DUTY CYCLE = 2.0%MAX

1.8

1.5

VGS = 2.0V

VGS = 2.5V

VGS = 3.5V

1.2

0.9

DRAIN TO SOURCE ON-RESISTANCE

10 20 30 40 50

ID, DRAIN CURRENT(A)

On-Resistance vs Drain Current and

Gate Voltage

60

50

(m:)

40

PULSE DURATION = 300PS
DUTY CYCLE = 2.0%MAX

ID = 2.8A

VGS = 3.0V

VGS = 4.5V

1.0

NORMALIZED

0.8

0.6

DRAIN TO SOURCE ON-RESISTANCE

-80 -40 0 40 80 120 160

Figure 3.

30

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

0.5 1.0 1.5 2.0 2.5

TJ, JUNCTION TEMPERATURE (oC)

Normalized On Resistance vs Junction

Temperature

PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX

VDS = 5V

o

TJ = 125

C

o

TJ = 25

C

o

TJ = -55

C

VGS, GATE TO SOURCE VOLTAGE (V)

30

, DRAIN TO SOURCE

20

ON-RESISTANCE

DS(ON)

R

10

12345

Figure 4.

TJ = 25oC

, GATE TO SOURCE VOLTAGE (V)

V

GS

On-Resistance vs Gate to Source

TJ = 125oC

Votlage

100

VGS = 0V

10

1

0.1

0.01

1E-3

, REVERSE DRAIN CURRENT (A)

S

I

1E-4

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

TJ = 125

TJ = 25

TJ = -55

o

C

o

C

o

C

®

MOSFET

Figure 5.

FDMA420NZ Rev B4

Transfer Characteristics Figure 6.

Source to Drain Diode Forward Voltage

vs Source Current

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