Fairchild FDMA410NZ service manual
FDMA410NZ
Single N-Channel 1.5 V Specified PowerTrench® MOSFET
20 V, 9.5 A, 23 m:
Features
Max r
Max r
Max r
Max r
HBM ESD protection level > 2.5 kV (Note 3)
Low Profile-0.8 mm maximum in the new package MicroFET
2x2 mm
Free from halogenated compounds and antimony oxides
RoHS Compliant
= 23 m: at VGS = 4.5 V, ID = 9.5 A
DS(on)
= 29 m: at VGS = 2.5 V, ID = 8.0 A
DS(on)
= 36 m: at VGS = 1.8 V, ID = 4.0 A
DS(on)
= 50 m: at VGS = 1.5 V, ID = 2.0 A
DS(on)
General Description
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the r
leadframe.
@ VGS= 1.5 V on special MicroFET
DS(ON)
Applications
Li-lon Battery Pack
Baseband Switch
Load Switch
DC-DC Conversion
FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench
April 2009
Pin 1
Drain
D
D
D
G
D
Bottom Drain Contact
D
Source
1
D
2
3
G
D
6
5
D
4
S
S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage 20 V
Gate to Source Voltage ±8 V
-Continuous TA= 25 °C (Note 1a) 9.5
-Pulsed 24
Power Dissipation TA = 25 °C (Note 1a) 2.4
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C (Note 1b) 0.9
A
Thermal Characteristics
R
TJA
R
TJA
Thermal Resistance, Junction to Ambient (Note 1a) 52
Thermal Resistance, Junction to Ambient (Note 1b) 145
Package Marking and Ordering Information
A
W
°C/W
®
MOSFET
Device Marking Device Package Reel Size Tape Width Quantity
410 FDMA410NZ MicroFET 2X2 7 ’’ 12 mm 3000 units
©2009 Fairchild Semiconductor Corporation
FDMA410NZ Rev.B2
1
www.fairchildsemi.com
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
'BV
'T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 20 V
Breakdown Voltage Temperature
Coefficient
I
= 250 PA, referenced to 25 °C 17 mV/°C
D
Zero Gate Voltage Drain Current VDS = 16 V, VGS= 0 V 1 PA
Gate to Source Leakage Current VGS = ±8 V, VDS= 0 V ±10 PA
On Characteristics
V
GS(th)
'V
'T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 0.4 0.7 1.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
= 250 PA, referenced to 25 °C –3 mV/°C
I
D
V
= 4.5 V, ID = 9.5 A 17 23
GS
= 2.5 V, ID = 8.0 A 20 29
V
GS
= 1.8 V, ID = 4.0 A 24 36
V
GS
= 1.5 V, ID = 2.0 A 29 50
V
GS
= 4.5 V, ID = 9.5 A,
V
GS
T
= 125 °C
J
23 32
Forward Transconductance VDD = 5 V, ID = 9.5 A 35 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 130 175 pF
Reverse Transfer Capacitance 85 130 pF
= 10 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance f = 1 MHz 2.1 :
815 1080 pF
FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench
m:
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Rise Time 3.9 10 ns
Turn-Off Delay Time 27 44 ns
= 10 V, ID = 9.5 A,
V
DD
V
= 4.5 V, R
GS
GEN
Fall Time 3.7 10 ns
Total Gate Charge
Gate to Source Charge 1.2 nC
Gate to Drain “Miller” Charge 2.0 nC
= 4.5 V , VDD = 10 V,
V
GS
I
= 9.5 A
D
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJA
the user's board design.
Maximum Continuous Drain-Source Diode Forward Current 2.0 A
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 2.6 10 nC
a.52 °C/W when mounted
on a 1 in2pad of 2 oz copper.
= 0 V, IS= 2.0 A (Note 2) 0.7 1.2 V
GS
= 9.5 A, di/dt = 100 A/Ps
I
F
= 6 :
7.5 15 ns
10 14 nC
12 22 ns
is guaranteed by design while R
TJC
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
TJA
®
MOSFET
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2009 Fairchild Semiconductor Corporation
FDMA410NZ Rev.B
2
2
www.fairchildsemi.com
FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench
Typical Characteristics T
= 25 °C unless otherwise noted
J
24
20
16
VGS = 4.5 V
VGS = 3.5 V
VGS = 2.5 V
VGS = 1.8 V
12
8
, DRAIN CURRENT (A)
D
4
I
0
0.0 0.5 1.0 1.5 2.0
1.6
1.4
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
V
Figure 1.
ID = 9.5 A
V
= 4.5 V
GS
, DRAIN TO SOURCE VOLTAGE (V)
DS
On-Region Characteristics Figure 2.
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (
J
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
VGS = 1.5 V
VGS = 1.2 V
o
C)
4.0
3.5
VGS = 1.2 V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
3.0
2.5
VGS = 1.5 V
V
GS
V
GS
NORMALIZED
2.0
1.5
1.0
V
=3.5 V
0.5
DRAIN TO SOURCE ON-RESISTANCE
0 4 8 12162024
I
, DRAIN CURRENT (A)
D
GS
GS
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
60
ID= 4.75 A
50
(m:)
40
DRAIN TO
,
30
DS(on)
r
20
SOURCE ON-RESISTANCE
10
1.01.52.02.53.03.54.04.5
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 4.
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5%MAX
TJ= 125 oC
TJ= 25 oC
Source Voltage
=1.8 V
=2.5 V
=4.5 VV
®
MOSFET
24
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5%MAX
20
VDS= 5 V
16
12
8
, DRAIN CURRENT (A)
D
I
4
0
0.0 0.5 1.0 1.5 2.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDMA410NZ Rev.B
2
TJ= 125 oC
TJ = 25 oC
TJ = -55 oC
30
V
= 0 V
GS
TJ= 125 oC
TJ = 25 oC
TJ = -55 oC
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
10
1
Forward Voltage vs Source Current
3
www.fairchildsemi.com
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