Fairchild FDMA291P service manual

April 2009

FDMA291P Single P-Channel 1.8V Specified PowerTrench

FDMA291P

Single P-Channel 1.8V Specified PowerTrench MOSFET

General Description

This device is designed specifically for battery charge

or load switching in cellular handset and other ultra-

portable applications. It features a MOSFET with low

on-state resistance.

The MicroFET 2x2 package offers exceptional thermal

performance for its physical size and is well suited to

linear mode applications.

D D G

Pin 1

Drain

D D S

MicroFET 2x

Source

2

Features

x –6.6 A, –20V. r

r

r

x Low profile – 0.8 mm maximum – in the new package

MicroFET 2x2 mm

Free

from halogenated compounds and antimony

oxides

RoHS Compliant

D

1

D

2

G

3

DS(ON)

DS(ON)

DS(ON)

Bottom Drain Contact

= 42 m: @ VGS = –4.5V

= 58 m: @ VGS = –2.5V

= 98 m: @ VGS = –1.8V

D

6

D

5

S

4

tm



MOSFET

Absolute Maximum Ratings

TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDS Drain-Source Voltage –20 V

VGS Gate-Source Voltage

I

D

P

D

TJ, T

STG

Drain Current – Continuous

– Pulsed –24

Power Dissipation for Single Operation

(Note 1b)

Operating and Storage Junction Temperature Range –55 to +150

(Note 1a)

–6.6

2.4

(Note 1a)

r8

0.9

V
A

W

qC

Thermal Characteristics

R

TJA

R

TJA

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

52

145

qC/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

291 FDMA291P 7’’ 8mm 3000 units

2009 Fairchild Semiconductor Corpora tion

FDMA291P Rev B4

FDMA291P Single P-Channel 1.8V Specified PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

DSS

'BV
'T

J

I

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1

DSS

I

Gate–Body Leakage VGS = ± 8 V, VDS = 0 V ±100 nA

GSS

On Characteristics

V

GS(th)

GS(th)

'V
'T

J

r

DS(on)

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

(Note 2)

Gate Threshold Voltage

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

= 0 V, ID = –250 PA

V

GS

I

= –250 PA, Referenced to 25°C

D

= VGS, ID = –250 PA

V

DS

I

= –250 PA, Referenced to 25°C

D

VGS = –4.5 V, ID = –6.6 A
V

= –2.5 V, ID = –5.1 A

GS

V

= –1.8 V, ID = –3.9 A

GS

= –4.5 V, ID = –6.6 A, TJ=125°C

V

GS

gFS Forward Transconductance VDS = –5 V, ID = –6.6 A 16 S

–20 V

–12

mV/qC

PA

–0.4 –0.7 –1.0 V

42
58
98
64

mV/qC

m:

3

36
51
79
49

Dynamic Characteristics

C

Input Capacitance 1000 pF

iss

C

Output Capacitance 190 pF

oss

C

Reverse Transfer Capacitance

rss

Switching Characteristics

t

Turn–On Delay Time 13 23 ns

d(on)

t

r

t

Turn–Off Delay Time 42 68 ns

d(off)

Turn–On Rise Time 9 18 ns

(Note 2)

tf Turn–Off Fall Time

Qg Total Gate Charge 10 14 nC

Qgs Gate–Source Charge 2 nC

Qgd Gate–Drain Charge

= –10 V, V

V

DS

GS

f = 1.0 MHz

V

= –10 V, ID = –1 A,

DD

V

= –4.5 V, R

GS

= –10 V, ID = –6.6 A,

V

DS

V

= –4.5 V

GS

GEN

= 0 V,

100 pF

= 6 :

25 40 ns

3 nC



MOSFET

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –2 A

VSD Drain–Source Diode Forward

Voltage

trr Diode Reverse Recovery Time 20 ns

Qrr Diode Reverse Recovery Charge

Notes:

1. R

is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

determined by the user's board design.

a. 52 °C/W when mounted

on a 1 in

2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%

VGS = 0 V, IS = –2 A

= –6.6 A,

I

F

dI

/dt = 100 A/µs

F

2

pad of 2 oz copper.

–0.8 –1.2 V

(Note 2)

8 nC

is guaranteed by design while R

TJC

b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.

TJA

FDMA291P Rev B4

is

Typical Characteristics

FDMA291P Single P-Channel 1.8V Specified PowerTrench

24

VGS = -4.5V

20

16

-4.0V

12

8

, DRAIN CURRENT (A)

D

-I

4

0

012345

-3.0V

-2.5V

-3.5V

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

-2.0V

-1.8V

2.6

VGS = -1.8V

2.4

2.2

2

1.8

-2.0V

1.6

, NORMALIZED

1.4

DS(ON)

R

1.2

DRAIN-SOURCE ON-RESISTANCE

1

0.8
0 4 8 12 16 20 24

-2.5V

-3.0V

, DRAIN CURRENT (A)

-I

D

-3.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

ID = -6.6A

V

= -10V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

Figure 3. On-Resistance Variation with

Temperature.

0.15

0.12

0.09

TA = 125oC

0.06

TA = 25oC

, ON-RESISTANCE (OHM)

0.03

DS(ON)

R

0

0246810

, GATE TO SOURCE VOLTAGE (V)

-V

GS

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

-4.0V

-4.5V

ID = -3.3A



MOSFET

24

VDS = -10V

20

16

12

8

, DRAIN CURRENT (A)

D

-I

4

0

01234

TA = -55oC

25oC

, GATE TO SOURCE VOLTAGE (V)

-V

GS

125oC

100

VGS = 0V

10

1

0.1

TA= 125oC

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

25oC

-55oC

-V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDMA291P Rev B4

Typical Characteristics

FDMA291P Single P-Channel 1.8V Specified PowerTrench

10

8

6

ID = -6.6A

VDS = -5V

-15V

-10V

1600

1200

800

C

iss

4

C

oss

, DRAIN TO SOURCE VOLTAGE (V)

-V

DS

, GATE-SOURCE VOLTAGE (V)

2

GS

-V

0

04812162024

, GATE CHARGE (nC)

Q

g

CAPACITANCE (pF)

400

C

rss

0

0 4 8 12 16 20

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

1000

100

R

LIMIT

DS(ON)

10

1

0.1

, DRAIN CURRENT (A)

D

-I

VGS = -10V

SINGLE PULSE

R

0.01

0.001

= 145oC/W

JA

T

T

= 25oC

A

0.01 0.1 1 10 100 1000

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

DC

10s

100ms

1s

10ms

1ms

100us

100

80

60

40

20

P(pk), PEAK TRANSIENT POWER (W )

0

0.0001 0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

SINGLE PULSE
R

JA

T

T

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power

Dissipation.

f = 1MHz

V

= 0 V

GS

= 145°C/W

= 25°C

A



MOSFET

1

THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE TRANSIENT

0.1

0.01

0.001

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

R

(t) = r(t) * R

JA

T

R

=145 °C/W

JA

T

P(pk)

t

1

t

2

- TA = P * R

T

J

Duty Cycle, D = t

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

JA

T

(t)

JA

T

/ t

1

2

FDMA291P Rev B4

Dimensional Outline and Pad Layout

FDMA291P Single P-Channel 1.8V specified PowerTrench

FDMA291P Rev. B4

®

MOSFET

TRADEMARKS

®

t

m

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

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PDP SPM™
Power-SPM™

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Programmable Active Droop™
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Saving our world, 1mW /W /kW at a time™
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

FDMA291P Single P-Channel 1.8 V Specified PowerTrench

®

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS
Definition of Terms

.

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDMA291P Rev. B4

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

6

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Rev. I40