Fairchild FDMA291P service manual

April 2009

FDMA291P Single P-Channel 1.8V Specified PowerTrench

FDMA291P

Single P-Channel 1.8V Specified PowerTrench MOSFET

General Description

This device is designed specifically for battery charge

or load switching in cellular handset and other ultra-

portable applications. It features a MOSFET with low

on-state resistance.

The MicroFET 2x2 package offers exceptional thermal

performance for its physical size and is well suited to

linear mode applications.

D D G

Pin 1

Drain

D D S

MicroFET 2x

Source

2

Features

x –6.6 A, –20V. r

r

r

x Low profile – 0.8 mm maximum – in the new package

MicroFET 2x2 mm

Free

from halogenated compounds and antimony

oxides

RoHS Compliant

D

1

D

2

G

3

DS(ON)

DS(ON)

DS(ON)

Bottom Drain Contact

= 42 m: @ VGS = –4.5V

= 58 m: @ VGS = –2.5V

= 98 m: @ VGS = –1.8V

D

6

D

5

S

4

tm



MOSFET

Absolute Maximum Ratings

TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDS Drain-Source Voltage –20 V

VGS Gate-Source Voltage

I

D

P

D

TJ, T

STG

Drain Current – Continuous

– Pulsed –24

Power Dissipation for Single Operation

(Note 1b)

Operating and Storage Junction Temperature Range –55 to +150

(Note 1a)

–6.6

2.4

(Note 1a)

r8

0.9

V
A

W

qC

Thermal Characteristics

R

TJA

R

TJA

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

52

145

qC/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

291 FDMA291P 7’’ 8mm 3000 units

2009 Fairchild Semiconductor Corpora tion

FDMA291P Rev B4

FDMA291P Single P-Channel 1.8V Specified PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

DSS

'BV
'T

J

I

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1

DSS

I

Gate–Body Leakage VGS = ± 8 V, VDS = 0 V ±100 nA

GSS

On Characteristics

V

GS(th)

GS(th)

'V
'T

J

r

DS(on)

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

(Note 2)

Gate Threshold Voltage

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

= 0 V, ID = –250 PA

V

GS

I

= –250 PA, Referenced to 25°C

D

= VGS, ID = –250 PA

V

DS

I

= –250 PA, Referenced to 25°C

D

VGS = –4.5 V, ID = –6.6 A
V

= –2.5 V, ID = –5.1 A

GS

V

= –1.8 V, ID = –3.9 A

GS

= –4.5 V, ID = –6.6 A, TJ=125°C

V

GS

gFS Forward Transconductance VDS = –5 V, ID = –6.6 A 16 S

–20 V

–12

mV/qC

PA

–0.4 –0.7 –1.0 V

42
58
98
64

mV/qC

m:

3

36
51
79
49

Dynamic Characteristics

C

Input Capacitance 1000 pF

iss

C

Output Capacitance 190 pF

oss

C

Reverse Transfer Capacitance

rss

Switching Characteristics

t

Turn–On Delay Time 13 23 ns

d(on)

t

r

t

Turn–Off Delay Time 42 68 ns

d(off)

Turn–On Rise Time 9 18 ns

(Note 2)

tf Turn–Off Fall Time

Qg Total Gate Charge 10 14 nC

Qgs Gate–Source Charge 2 nC

Qgd Gate–Drain Charge

= –10 V, V

V

DS

GS

f = 1.0 MHz

V

= –10 V, ID = –1 A,

DD

V

= –4.5 V, R

GS

= –10 V, ID = –6.6 A,

V

DS

V

= –4.5 V

GS

GEN

= 0 V,

100 pF

= 6 :

25 40 ns

3 nC



MOSFET

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –2 A

VSD Drain–Source Diode Forward

Voltage

trr Diode Reverse Recovery Time 20 ns

Qrr Diode Reverse Recovery Charge

Notes:

1. R

is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

determined by the user's board design.

a. 52 °C/W when mounted

on a 1 in

2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%

VGS = 0 V, IS = –2 A

= –6.6 A,

I

F

dI

/dt = 100 A/µs

F

2

pad of 2 oz copper.

–0.8 –1.2 V

(Note 2)

8 nC

is guaranteed by design while R

TJC

b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.

TJA

FDMA291P Rev B4

is