Fairchild FDMA2002NZ service manual

FDMA2002NZ Dual N-Channel PowerTrench

FDMA2002NZ

Dual N-Channel PowerTrench MOSFET

General Description

This device is designed specifically as a single package

solution for dual switching requirements in cellular

handset and other ultra-portable applications. It

features two independent N-Channel MOSFETs with

low on-state resistance for minimum conduction losses.

The MicroFET 2x2 offers exceptional thermal

performance for its physical size and is well suited to

linear mode applications.

PIN 1
S1 G1 D2

D1 D2

MicroFET 2x2

D1 G2 S2

May 200

tm

t

tm

tm

Features

x 2.9 A, 30 V R



R

R

x Low profile – 0.8 mm maximum – in the new package



MicroFET 2x2 mm

x HBM ESD protection level = 1.8kV (Note 3)



x RoHS Compliant



Free from halogenated compounds and antimony



oxides

S1

G1

D2

= 123 m: @ VGS = 4.5 V

DS(ON)

= 140 m: @ VGS = 3.0 V

DS(ON)

= 163 m: @ VGS = 2.5 V

DS(ON)

1

2

3

D1

6

5

G2

4

S2



MOSFET

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

Symbol Parameter Ratings Units

VDS Drain-Source Voltage 30 V

VGS Gate-Source Voltage

I

D

D

TJ, T

Drain Current – Continuous (TC = 25°C, VGS = 4.5V) 2.9

– Continuous (TC = 25°C, VGS = 2.5V) 2.7

– Pulsed 10

Power Dissipation for Single Operation (Note 1a) 1.5 P

Power Dissipation for Single Operation

Operating and Storage Temperature –55 to +150

STG

(Note 1b) 0.65

r12

Thermal Characteristics

R

TJA

R

TJA

R

TJA

R

TJA

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

(Note 1a) 83 (Single Operation)

(Note 1b) 193 (Single Operation)

(Note 1c) 68 (Dual Operation)

(Note 1d) 145 (Dual Operation)

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

002 FDMA2002NZ 7’’ 8mm 3000 units

20 Fairchild Semiconductor Corpora tion

FDMA2002NZ Rev B (W)

V

A

W

qC

qC/W

FDMA2002NZ Dual N-Channel PowerTrench



Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

'BVDSS
'T

J

I

 Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1

DSS

I

Gate–Body Leakage Current VGS = ± 12 V, VDS = 0 V ±10

GSS

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

= 0 V, ID = 250 PA

V

GS

I

= 250 PA, Referenced to 25°C

D

30 V

25 mV/°C

PA

PA

On Characteristics

V

Gate Threshold Voltage

GS(th)

'VGS(th)
'T

J

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source
On–Resistance

= VGS, ID = 250 PA

V

DS

= 250 PA, Referenced to 25°C

I

D

VGS = 4.5V, ID = 2.9A 75 123
VGS = 3.0V, ID = 2.7A 84 140
VGS = 2.5V, ID = 2.5A 92 163
VGS = 4.5V, ID = 2.9A, TC = 85°C 95 166
VGS = 3.0V, ID = 2.7A, TC = 150°C 138 203

= 2.5V, ID = 2.5A, TC = 150°C 150 268

V

GS

0.4 1.0 1.5 V

–3

mV/qC

m:

Dynamic Characteristics

C

Input Capacitance 190 220 pF

iss

C

Output Capacitance 30 40 pF

oss

C

Reverse Transfer Capacitance

rss

V

= 15 V, V

DS

f = 1.0 MHz

GS

= 0 V,

20 30 pF

Switching Characteristics (Note 2)

= 15 V, ID = 1 A,

t

Turn–On Delay Time 6 12 ns

d(on)

t

r

t

Turn–Off Delay Time 12 21 ns

d(off)

Turn–On Rise Time 8 16 ns

tf Turn–Off Fall Time

Qg Total Gate Charge 2.4 3.0 nC

Qgs Gate–Source Charge 0.35 nC

Qgd Gate–Drain Charge

V

DD

= 4.5 V, R

V

GS

= 15 V, ID = 2.9 A,

V

DS

V

= 4.5 V

GS

GEN

= 6 :

2 10 ns

0.75 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Source–Drain Diode Forward Current 2.9 A

V

SD

trr Diode Reverse Recovery Time 10 ns

Qrr Diode Reverse Recovery Charge

Source–Drain Diode Forward
Voltage

IS = 2.0 A 0.9 1.2
I

= 1.1 A 0.8 1.2

S

= 2.9 A,

I

F

dI

/dt = 100 A/μs

F

2 nC

V

MOSFET

FDMA2002NZ Rev B (W)