Fairchild FDMA1028NZ service manual

FDMA1028NZ Dual N-Channel PowerTrench

FDMA1028NZ

Dual N-Channel PowerTrench MOSFET

General Description

This device is designed specifically as a single package

solution for dual switching requirements in cellular

handset and other ultra-portable applications. It

features two independent N-Channel MOSFETs with

low on-state resistance for minimum conduction losses.

The MicroFET 2x2 package offers exceptional thermal

performance for its physical size and is well suited to

linear mode applications.

PIN 1
S1 G1 D2

D1 D2

D1 G2 S2

MicroFET 2x2

October 2010

t

tm

Features



x 3.7 A, 20V. R

R



x Low profile – 0.8 mm maximum – in the new package

MicroFET 2x2 mm



x HBM ESD protection level > 2kV (Note 3)

x RoHS Compliant



Free from halogenated



oxides

S1

1

2

G1

3

D2

= 68 m: @ VGS = 4.5V

DS(ON)

= 86 m: @ VGS = 2.5V

DS(ON)

compounds and antimony

6

5

4

D1

G2

S2



MOSFET

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

Symbol Parameter Ratings Units

VDS Drain-Source Voltage 20 V

VGS Gate-Source Voltage

I

D

P

D

TJ, T

STG

Drain Current – Continuous (Note 1a) 3.7

– Pulsed 6

Power Dissipation for Single Operation (Note 1a) 1.4

(Note 1b)

Operating and Storage Junction Temperature Range –55 to +150

r12

0.7

V
A

W

qC

Thermal Characteristics

R

TJA

R

TJA

R

TJA

R

TJA

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

(Note 1a) 86 (Single Operation)

(Note 1b) 173 (Single Operation)

(Note 1c) 69 (Dual Operation)

(Note 1d) 151 (Dual Operation)

qC/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

028 FDMA1028NZ 7’’ 8mm 3000 units

20 Fairchild Semiconductor Corpora tion

FDMA1028NZ Rev B5

FDMA1028NZ Dual N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

'BVDSS
'T

J

I

Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1

DSS

I

Gate–Body Leakage VGS = ± 12 V, VDS = 0 V ±10

GSS

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

= 0 V, ID = 250 PA

V

GS

I

= 250 PA, Referenced to 25qC

D

20 V

15

mV/qC

PA

PA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

'VGS(th)
'T

J

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

= VGS, ID = 250 PA

V

DS

I

= 250 PA, Referenced to 25qC

D

VGS = 4.5 V, ID = 3.7 A
V

= 2.5 V, ID = 3.3 A

GS

= 4.5 V, ID = 3.7 A, TJ=125qC

V

GS

gFS Forward Transconductance VDS = 10 V, ID = 3.7 A 16 S

0.6 1.0 1.5 V

68
86
90

mV/qC

m:

–4

37
50
53

Dynamic Characteristics

C

Input Capacitance 340 pF

iss

C

Output Capacitance 80 pF

oss

C

Reverse Transfer Capacitance

rss

Rg Gate Resistance 25

V

= 10 V, V

DS

f = 1.0 MHz

GS

= 0 V,

60 pF

Ω

Switching Characteristics (Note 2)

= 10 V, ID = 1 A,

t

Turn–On Delay Time 8 16 ns

d(on)

t

r

t

Turn–Off Delay Time 14 26 ns

d(off)

Turn–On Rise Time 8 16 ns

tf Turn–Off Fall Time

Qg Total Gate Charge 4 6 nC

Qgs Gate–Source Charge 0.7 nC

Qgd Gate–Drain Charge

V

DD

= 4.5 V, R

V

GS

= 10 V, ID = 3.7 A,

V

DS

V

= 4.5 V

GS

GEN

= 6 :

3 6 ns

1.1 nC



MOSFET

FDMA1028NZ Rev B5

Notes:

1. R

is determined with the device m ounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

user's board design.
(a) R

(b) R

(c) R

(d) R

2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

= 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.

TJA

= 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.

TJA

= 69 oC/W when mounted on a 1 in2pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.

TJA

= 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.

TJA

o

b)173

a)86 oC/W when
mounted on a 1

2

pad of 2 oz

in
copper.

C/W when
mounted on a
minimum pad of 2
oz copper.

is guaranteed by design while R

TJC

o

C/W when

c)69
mounted on a 1 in
pad of 2 oz copper.

FDMA1028NZ Dual N-Channel PowerTrench

is determined by the

TJA

o

d)151

C/W when

2

mounted on a
minimum pad of 2 oz
copper.



MOSFET

FDMA1028NZ Rev B5