FDMA1028NZ Dual N-Channel PowerTrench
FDMA1028NZ
Dual N-Channel PowerTrench MOSFET
General Description
This device is designed specifically as a single package
solution for dual switching requirements in cellular
handset and other ultra-portable applications. It
features two independent N-Channel MOSFETs with
low on-state resistance for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
PIN 1
S1 G1 D2
D1 D2
D1 G2 S2
MicroFET 2x2
October 2010
t
tm
Features
x 3.7 A, 20V. R
R
x Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
x HBM ESD protection level > 2kV (Note 3)
x RoHS Compliant
Free from halogenated
oxides
S1
1
2
G1
3
D2
= 68 m: @ VGS = 4.5V
DS(ON)
= 86 m: @ VGS = 2.5V
DS(ON)
compounds and antimony
6
5
4
D1
G2
S2
MOSFET
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
Symbol Parameter Ratings Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage
I
D
P
D
TJ, T
STG
Drain Current – Continuous (Note 1a) 3.7
– Pulsed 6
Power Dissipation for Single Operation (Note 1a) 1.4
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +150
r12
0.7
V
A
W
qC
Thermal Characteristics
R
TJA
R
TJA
R
TJA
R
TJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a) 86 (Single Operation)
(Note 1b) 173 (Single Operation)
(Note 1c) 69 (Dual Operation)
(Note 1d) 151 (Dual Operation)
qC/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
028 FDMA1028NZ 7’’ 8mm 3000 units
20 Fairchild Semiconductor Corpora tion
FDMA1028NZ Rev B5
FDMA1028NZ Dual N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
'BVDSS
'T
J
I
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
DSS
I
Gate–Body Leakage VGS = ± 12 V, VDS = 0 V ±10
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 PA
V
GS
I
= 250 PA, Referenced to 25qC
D
20 V
15
mV/qC
PA
PA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
'VGS(th)
'T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 PA
V
DS
I
= 250 PA, Referenced to 25qC
D
VGS = 4.5 V, ID = 3.7 A
V
= 2.5 V, ID = 3.3 A
GS
= 4.5 V, ID = 3.7 A, TJ=125qC
V
GS
gFS Forward Transconductance VDS = 10 V, ID = 3.7 A 16 S
0.6 1.0 1.5 V
68
86
90
mV/qC
m:
–4
37
50
53
Dynamic Characteristics
C
Input Capacitance 340 pF
iss
C
Output Capacitance 80 pF
oss
C
Reverse Transfer Capacitance
rss
Rg Gate Resistance 25
V
= 10 V, V
DS
f = 1.0 MHz
GS
= 0 V,
60 pF
Ω
Switching Characteristics (Note 2)
= 10 V, ID = 1 A,
t
Turn–On Delay Time 8 16 ns
d(on)
t
r
t
Turn–Off Delay Time 14 26 ns
d(off)
Turn–On Rise Time 8 16 ns
tf Turn–Off Fall Time
Qg Total Gate Charge 4 6 nC
Qgs Gate–Source Charge 0.7 nC
Qgd Gate–Drain Charge
V
DD
= 4.5 V, R
V
GS
= 10 V, ID = 3.7 A,
V
DS
V
= 4.5 V
GS
GEN
= 6 :
3 6 ns
1.1 nC
MOSFET
FDMA1028NZ Rev B5
Notes:
1. R
is determined with the device m ounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJA
user's board design.
(a) R
(b) R
(c) R
(d) R
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
= 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
TJA
= 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.
TJA
= 69 oC/W when mounted on a 1 in2pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.
TJA
= 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.
TJA
o
b)173
a)86 oC/W when
mounted on a 1
2
pad of 2 oz
in
copper.
C/W when
mounted on a
minimum pad of 2
oz copper.
is guaranteed by design while R
TJC
o
C/W when
c)69
mounted on a 1 in
pad of 2 oz copper.
FDMA1028NZ Dual N-Channel PowerTrench
is determined by the
TJA
o
d)151
C/W when
2
mounted on a
minimum pad of 2 oz
copper.
MOSFET
FDMA1028NZ Rev B5
Typical Characteristics
FDMA1028NZ Dual N-Channel PowerTrench
6
VGS = 4.5V
5
3.5V
4
3
2
, DRAIN CURRENT (A)
D
I
1
0
0 0.2 0.4 0.6 0.8 1 1.2
2.5V
3.0V
, DRAIN-SOURCE VOLTAGE (V)
V
DS
2.0V
1.5V
2
VGS = 2.0V
1.8
1.6
1.4
, NORMALIZED
1.2
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0123456
2.5V
3.0V
3.5V
I
, DRAIN CURRENT (A)
D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 3.7A
1.5
V
= 4.5V
GS
1.4
1.3
1.2
1.1
, NORMALIZED
1
0.9
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (oC)
J
0.13
0.11
0.09
0.07
, ON-RESISTANCE (OHM)
0.05
DS(ON)
R
TA = 25oC
0.03
0246810
TA = 125oC
V
, GATE TO SOURCE VOLTAGE (V)
GS
4.0V
4.5V
ID = 1.85A
MOSFET
Figure 3. On-Resistance Variation with
Temperature.
6
VDS = 5V
5
4
3
2
, DRAIN CURRENT (A)
D
I
1
0
0.511.522.5
TA = 125oC
25oC
V
, GATE TO SOURCE VOLTAGE (V)
GS
-55oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0.1
TA= 125oC
25oC
-55oC
0 0.2 0.4 0.6 0.8 1 1.2
, BODY DIODE FORWARD VOLTAGE (V)
V
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA1028NZ Rev B5
Typical Characteristics
FDMA1028NZ Dual N-Channel PowerTrench
10
ID = 3.7A
8
6
4
, GATE-SOURCE VOLTAGE (V)
2
GS
V
0
0246810
Qg, GATE CHARGE (nC)
VDS = 5V
15V
10V
500
400
300
200
CAPACITANCE (pF)
100
C
rss
0
0 5 10 15 20
C
oss
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
C
iss
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
1
, DRAIN CURRENT (A)
D
I
VGS = 4.5V
SINGLE PULSE
0.1
= 173°C/W
R
T
JA
= 25°C
T
A
0.01
0.1 1 10 100
, DRAIN-SOURCE VOLTAGE (V)
V
DS
100ms
1s
10s
DC
10ms
100us
1ms
50
SINGLE PULSE
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W)
0
0.0001 0.001 0.01 0.1 1 10 100 1000
t
, TIME (sec)
1
R
= 173°C/W
T
JA
T
= 25°C
A
f = 1MHz
V
= 0 V
GS
MOSFET
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power
Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSIENT
0.1
THERMAL RESISTANCE
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
(t) = r(t) * R
JA
T
R
=173 °C/W
JA
T
P(pk)
t
1
t
2
T
- TA = P * R
J
Duty Cycle, D = t
JA
T
(t)
JA
T
/ t
1
2
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDMA1028NZ Rev B5
Dimensional Outline and Pad Layout
FDMA1028NZ Dual N-Channel PowerTrench
MOSFET
FDMA1028NZ Rev B5
TRADEMARKS
The following includes registered and unregistered tradema rks and service marks, owned by Fair child Semiconductor and/ or its global subsidiaries, and is no t
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
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ESBC™
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FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
®
®
tm
®
®
®
®
*
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
®
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
tm
®
SM
®
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
®*
The Power Franchise
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
tm
®
®
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMA1028NZ Dual N-Channel PowerTrench
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b ) support or su stain li fe,
and (c) whose failure to perform when properly used in acco rdance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fai rchild
Semiconductor. The datasheet is for reference information only .
Rev. I48
FDMA1028NZ Rev B5
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