Fairchild FDMA1027PT service manual

FDMA1027PT

Dual P-Channel PowerTrench®MOSFET

–20 V, –3 A, 120 m:
Features

 Max r

 Max r

 Max r

 Low profile - 0.55 mm maximum - in the new package

MicroFET 2x2 Thin

 RoHS Compliant

 Free from halogenated compounds and antimony

oxides

= 120 m: at VGS = -4.5 V, ID = -3.0 A

DS(on)

= 160 m: at VGS = -2.5 V, ID = -2.5 A

DS(on)

= 240 m: at VGS = -1.8 V, ID = -1.0 A

DS(on)

General Description

This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features two independent
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connected in the typical common
source configuration, bi-directional current flow is possible.

The MicroFET 2x2 Thin package offers exceptional thermal
performance for it's physical size and is well suited to linear
mode applications.

Applications

 Battery management

 Load switch

 Battery protection

FDMA1027PT Dual P-Channel PowerTrench

May 2009

®

MOSFET

PIN 1

S1 G1 D2

D1 D2

S1

G1

D2

16

1

2

2

3

3

6

5

4

D1 G2 S2

MicroFET 2X2 Thin

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage -20 V

Gate to Source Voltage ±8 V

Drain Current -Continuous TA= 25 °C (Note 1a) -3

-Pulsed -6

Power Dissipation for Single Operation TA = 25 °C (Note 1a) 1.4

Power Dissipation for Single Operation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C (Note 1b) 0.7

A

Thermal Characteristics

R

TJA

R

TJA

R

TJA

R

TJA

Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 86

Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 173

Thermal Resistance, Junction to Ambient (Dual Operation) (Note 1c) 69

Thermal Resistance, Junction to Ambient (Dual Operation) (Note 1d) 151

Package Marking and Ordering Information

D1

5

G2

4

S2

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

27 FDMA1027PT MicroFET 2x2 Thin 7 ’’ 8 mm 3000 units

©2009 Fairchild Semiconductor Corporation
FDMA1027PT Rev.B4

1

www.fairchildsemi.com

FDMA1027PT Dual P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV
'T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = -250 PA, VGS = 0 V -20 V

Breakdown Voltage Temperature
Coefficient

I

= -250 PA, referenced to 25 °C -12 mV/°C

D

Zero Gate Voltage Drain Current VDS = -16 V, VGS= 0 V -1 PA

Gate to Source Leakage Current VGS = ±8 V, VDS= 0 V ±100 nA

On Characteristics

V

GS(th)

'V
'T

r

DS(on)

I

D(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = -250 PA -0.4 -0.7 -1.3 V

Gate to Source Threshold Voltage
Temperature Coefficient

Drain to Source On Resistance

= -250 PA, referenced to 25 °C 2 mV/°C

I

D

V

= -4.5 V, ID = -3.0 A 90 120

GS

= -2.5 V, ID = -2.5 A 120 160

V

GS

= -1.8 V, ID = -1.0 A 172 240

V

GS

= -4.5 V, ID = -3.0 A ,

V

GS

= 125 °C

T

J

118 160

On to State Drain Current VGS = -4.5 V, VDS= -5 V -20 A

Forward Transconductance VDS = -5 V, ID = -3.0 A 7 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance 80 pF

Reverse Transfer Capacitance 45 pF

V

= -10 V, VGS = 0 V,

DS

f = 1 MHz

435 pF

m:

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Rise Time 11 1 9 ns

Turn-Off Delay Time 15 27 ns

Fall Time 612ns

Total Gate Charge

Gate to Source Gate Charge 0.8 nC

Gate to Drain “Miller” Charge 0.9 nC

Drain-Source Diode Characteristics

I

S

V

SD

t

rr

Q

rr

Maximum continuous Source-Drain Diode Forward Current -1.1 A

Source to Drain Diode Forward Voltage VGS= 0 V, IS= -1.1 A (Note 2) -0.8 -1.2 V

Reverse Recovery Time

Reverse Recovery Charge 6 nC

V

= -10 V, ID = -1.0 A

DD

V

= -4.5 V, R

GS

= -10 V, ID = -3.0 A

V

DD

= -4.5 V

V

GS

= -3.0 A, di/dt = 100 A/Ps

I

F

GEN

= 6 :

918ns

46nC

17 ns

FDMA1027PT Rev.B4

2©2009 Fairchild Semiconductor Corporation

www.fairchildsemi.com

Notes:

1. R

is determined with the device mou nted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

user's board design.
(a) R

(b) R

(c) R

(d) R

2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%

= 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.

TJA

= 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.

TJA

= 69 oC/W when mounted on a 1 in2pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.

TJA

= 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.

TJA

o

C/W when

a)86 oC/W when
mounted on a 1

2

in

pad of 2 oz

copper.

b)173
mounted on a
minimum pad of 2
oz copper.

is guaranteed by design while R

TJC

o

C/W when

c)69
mounted on a 1 in
pad of 2 oz copper.

2

is determined by the

TJA

o

C/W when

d)151
mounted on a
minimum pad of 2 oz
copper.

FDMA1027PT Dual P-Channel PowerTrench

®

MOSFET

FDMA1027PT Rev.B4

3©2009 Fairchild Semiconductor Corporation

www.fairchildsemi.com