Fairchild FDMA1027P service manual

FDMA1027P

Dual P-Channel PowerTrench® MOSFET

FDMA1027P Dual P-Channel PowerTrench

May 2010

General Description

This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two
independent P-Channel MOSFETs with low on-state
resistance for minimum conduction losses. When
connected in the typical common source configuration,
bi-directional current flow is possible.

The MicroFET 2x2 package offers exceptional thermal
performance for it's physical size and is well suited to linear
mode applications.

PIN1

S1

D1 D2

MicroFET 2X2

Absolute Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

, T

T

J

STG

MOSFET Drain-Source Voltage -20 V

MOSFET Gate-Source Voltage r8V

Drain Current -Continuous (Note 1a)

-Pulsed

Power dissipation

Operating and Storage Junction Temperature Range

G2

D1

= 25°C unless otherwise noted

A

Features

 -3.0 A, -20V. R

R

R

 Low Profile - 0.8 mm maximun - in the new package

MicroFET 2x2 mm

 RoHS Compliant

Free from halogenated compounds and antimony



oxides

G1 D2

S1

G1

S2

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1d)

= 120 m: @ VGS = -4.5 V

DS(ON)

= 160 m: @ VGS = -2.5 V

DS(ON)

= 240 m: @ VGS = -1.8 V

DS(ON)

1

2

3

D2

-3.0

1.4

0.7

1.8

0.8

-55 to +150

-6

6

5

4

D1

G2

S2

®

MOSFET

A

W

o

C

Thermal Characteristics

R

TJA

R

TJA

R

TJA

R

TJA

Thermal Resistance for Single Operation, Junction-to-Ambient (Note 1a) 86

Thermal Resistance for Single Operation, Junction-to-Ambient (Note 1b) 173

Thermal Resistance for Dual Operation, Junction-to-Ambient 69

Thermal Resistance for Dual Operation, Junction-to-Ambient

(Note 1c)

(Note 1d)

151

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

027 FDMA1027P 7" 8mm 3000 units

©2010 Fairchild Semiconductor Corporation FDMA1027P Rev.D51

o

C/W

FDMA1027P Dual P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

'BV

DSS

'T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

'V

GS(th)

'T

J

R

DS(ON)

I

D(on)

g

FS

Drain-Source Breakdown Voltage VGS = 0V, ID = -250PA -20 - - V

Breakdown Voltage Temperature
Coefficient

ID = -250PA,
Referenced to 25°C

- -12 - mV/°C

Zero Gate Voltage Drain Current VDS = -16V, VGS = 0V - - -1 PA

Gate-Body Leakage, VGS = r8V, VDS = 0V - - r100 nA

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = -250PA -0.4 -0.7 -1.3 V

Gate Threshold Voltage
Temperature Coefficient

Static Drain-Source On-Resistance

On-State Drain Current VGS = -4.5V, VDS = -5V -20 - - A

Forward Transconductance VDS = -5V, ID = -3.0A - 7 - S

ID = -250PA,
Referenced to 25°C

V

= -4.5V, ID = -3.0A - 90 120

GS

= -2.5V, ID = -2.5A - 120 160

V

GS

= -1.8V, ID = -1.0A - 172 240

V

GS

= -4.5V, ID = -3.0A

V

GS

= 125°C

T

J

- 2 - mV/°C

- 118 160

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance - 80 - pF

Reverse Transfer Capacitance - 45 - pF

V

= -10V, VGS = 0V,

DS

f = 1.0MHz

- 435 - pF

m:

®

MOSFET

Switching Characteristics (Note 2)

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time - 11 19 ns

Turn-Off Delay Time - 15 27 ns

= -10V, ID = -1A

V

DD

= -4.5V, R

V

GS

GEN

= 6:

Turn-Off Fall Time - 6 12 ns

Total Gate Charge

Gate-Source Charge - 0.8 - nC

Gate-Drain Charge - 0.9 - nC

= -10V, ID = -3.0A,

V

DS

= -4.5V

V

GS

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

t

rr

Q

rr

Maximum Continuous Drain-Source Diode Forward Current - - -1.1 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = -1.1 A (Note 2) - -0.8 -1.2 V

Diode Reverse Recovery Time

Diode Reverse Recovery Charge - 6 - nC

= -3.0A, dIF/dt=100A/Ps

I

F

- 9 18 ns

-46nC

-17-ns

FDMA1027P Rev.D52

FDMA1027P Dual P-Channel PowerTrench

Electrical Characteristics T

Notes:

is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1: R

TJA

determined by the user's board design.
(a) R

= 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB. For single operation.

TJA

= 173°C/W when mounted on a minimum pad of 2 oz copper. For single operation.

(b) R

TJA

(c) R

(d) R

2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0%

= 69oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB, For dual operation, configured in parallel.

TJA

= 151oC/W when mounted on a minimum pad of 2 oz copper. For dual operation, configured in parallel.

TJA

a) 86oC/W when

mounted on a

2

pad of 2

1 i n

oz copper.

= 25°C unless otherwise noted

A

o

b) 173

C/W when

mounted on a

mini mum pad of

2 oz copper.

is guaranteed by design while R

TJC

o

c) 69

C/W when

mounted on a

2

pad of 2

1 in

oz copper.

is

TJA

o

C/W when

d) 151
mounted on a
minimum pad of
2 oz copper.

®

MOSFET

FDMA1027P Rev.D53