Fairchild FDMA1023PZ service manual

FDMA1023PZ

Dual P-Channel PowerTrench®MOSFET

–20V, –3.7A, 72m:
Features

 Max r

 Max r

 Max r

 Max r

 Low profile - 0.8 mm maximum - in the new package

MicroFET 2x2 mm

 HBM ESD protection level > 2kV typical (Note 3)

 RoHS Compliant



Free from halogenated compounds and antimony
oxides

= 72m: at VGS = –4.5V, ID = –3.7A

DS(on)

= 95m: at VGS = –2.5V, ID = –3.2A

DS(on)

= 130m: at VGS = –1.8V, ID = –2.0A

DS(on)

= 195m: at VGS = –1.5V, ID = –1.0A

DS(on)

General Description

This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two independent
P-Channel MOSFETs with low on-state resistance for minimum
conduction
source configuration, bi-directional current flow is possible.

The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.

FDMA1023PZ Dual P-Channel PowerTrench

May 2009

tm

losses. When connected in the typical common

®

MOSFET

Pin 1

G1

D2

S2

D2

S1

G1

D2

6

1

2

3

1.5

0.7

D1

G2

5

4

S2

S1

D1

D1

MicroFET 2X2

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage –20 V

Gate to Source Voltage ±8 V

Drain Current -Continuous (Note 1a) –3.7

-Pulsed –6

Power Dissipation (Note 1a)
(Note 1b)

Operating and Storage Junction Temperature Range –55 to +150 °C

G2

= 25°C unless otherwise noted

A

Thermal Characteristics

R

TJA

R

TJA

R

TJA

R

TJA

Thermal Resistance for Single Operation, Junction to Ambient (Note 1a) 86

Thermal Resistance for Single Operation, Junction to Ambient  (Note 1b) 173

Thermal Resistance for Dual Operation, Junction to Ambient  (Note 1c) 69

Thermal Resistance for Dual Operation, Junction to Ambient  (Note 1d) 151

Package Marking and Ordering Information

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

023 FDMA1023PZ MicroFET 2X2 7” 8mm 3000 units

©2009 Fairchild Semiconductor Corporation
FDMA1023PZ Rev.C3

1

www.fairchildsemi.com

FDMA1023PZ Dual P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV
'T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = –250PA, VGS = 0V –20 V

Breakdown Voltage Temperature
Coefficient

I

= –250PA, referenced to 25°C –11 mV/°C

D

Zero Gate Voltage Drain Current VDS = –16V, VGS= 0V –1 PA

Gate to Source Leakage Current VGS = ±8V, VDS= 0V ±10 PA

On Characteristics

V

GS(th)

'V
'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = –250PA –0.4 –0.7 –1.0 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On-Resistance

= –250PA, referenced to 25°C 2.5 mV/°C

I

D

V

= –4.5V, ID = –3.7A 60 72

GS

= –2.5V, ID = –3.2A 75 95

V

GS

= –1.8V, ID = –2.0A 100 130

V

GS

= –1.5V, ID = –1.0A 130 195

V

GS

= –4.5V, ID = –3.7A,TJ =125°C 81 91

V

GS

Forward Transconductance VDS = –5V, ID = –3.7A 12 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance 100 135 pF

Reverse Transfer Capacitance 90 135 pF

= –10V, VGS = 0V,

V

DS

f = 1MHz

490 655 pF

m:

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g(TOT)

gs

gd

Turn-On Delay Time

Rise Time 12 22 ns

Turn-Off Delay Time 64 103 ns

Fall Time 37 60 ns

Total Gate Charge

Gate to Source Gate Charge 0.7 nC

Gate to Drain “Miller” Charge 2.0 nC

Drain-Source Diode Characteristics

I

S

V

SD

t

rr

Q

rr

Maximum Continuous Source-Drain Diode Forward Current

Source to Drain Diode Forward Voltage VGS= 0V, IS= –1.1A (Note 2) –0.8 –1.2 V

Reverse Recovery Time

Reverse Recovery Charge 15 23 nC

VDD = –10V, ID = –1A

= –4.5V, R

V

GS

V

= –10V, ID = –3.7A

DD

= –4.5V

V

GS

= –3.7A, di/dt = 100A/Ps

I

F

GEN

= 6:

918ns

8.6 12 nC

–1.1 A

32 48 ns

FDMA1023PZ Rev.C3

2

www.fairchildsemi.com

Notes:

1: R

is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

user's board design.
(a) R

= 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB. For single operation.

TJA

(b) R

= 173°C/W when mounted on a minimum pad of 2 oz copper. For single operation.

TJA

(c) R

(d) R

= 69oC/W when mounted on a 1in2pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB, For dual operation.

TJA

= 151oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.

TJA

is guaranteed by design while R

TJC

is determined by the

TJA

FDMA1023PZ Dual P-Channel PowerTrench

o

C/W when

a) 86oC/W when
mounted on a

2

1 i n

pad of 2

oz copper.

2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0%

3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

b) 173
mounted on a
mini mum pad of
2 oz copper.

o

c) 69

C/W when

mounted on a

2

1 in

pad of 2

oz copper.

o

C/W when

d) 151
mounted on a
minimum pad of
2 oz copper.

®

MOSFET

FDMA1023PZ Rev.C3

3

www.fairchildsemi.com